Abstract
In this paper, the effect of junction temperature swing duration on lifetime of transfer molded power insulated gate bipolar transistor (IGBT) modules is studied and a relevant lifetime factor is modeled. This study is based on 39 accelerated power cycling test results under six different conditions by an advanced power cycling test setup, which allows tested modules to be operated under more realistic electrical conditions during the power cycling test. The analysis of the test results and the temperature swing duration dependent lifetime factor under different definitions and confidence levels are presented. This study enables to include the tΔTj effect on lifetime model of IGBT modules for its lifetime estimation and it may result in improved lifetime prediction of IGBT modules under given mission profiles of converters. A postfailure analysis of the tested IGBT modules is also performed.
| Original language | English |
|---|---|
| Article number | 7820215 |
| Journal | IEEE Transactions on Power Electronics |
| Volume | 32 |
| Issue number | 8 |
| Pages (from-to) | 6434-6443 |
| Number of pages | 10 |
| ISSN | 0885-8993 |
| DOIs | |
| Publication status | Published - Aug 2017 |
Keywords
- Failure mechanism
- IGBT module
- Insulated gate bipolar transistor (IGBT)
- Junction temperature swing duration
- Lifetime model
- Power cycling test
- Reliability