Test setup for long term reliability investigation of Silicon Carbide MOSFETs

Nick Baker; Stig Munk-Nielsen; Szymon Beczkowski

doi:10.1109/EPE.2013.6634652

Test setup for long term reliability investigation of Silicon Carbide MOSFETs

Nick Baker, Stig Munk-Nielsen, Szymon Beczkowski

AAU Energy

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

24 Citations (Scopus)

Abstract

Silicon Carbide MOSFETs are now widely available and have frequently been demonstrated to offer numerous advantages over Silicon based devices. However, reliability issues remain a significant concern in their realisation in commercial power electronic systems. In this paper, a test bench is designed that enables an accelerated power cycling test to be performed on packaged Silicon Carbide MOSFETs (TO-247) under realistic operating conditions. An accelerated power cycling test is then performed, with on-state resistance selected as the observed parameter to detect degradation. On-state resistance is routinely monitored online through the use of an innovative voltage measurement system. The packaged Silicon Carbide MOSFET is shown to exhibit a 25% increase in on-state resistance as the device ages throughout its lifetime, with the test still on-going.

Original language	English
Title of host publication	Proceedings of the 15th European Conference on Power Electronics and Applications, EPE 2013
Number of pages	9
Publisher	IEEE Press
Publication date	2013
ISBN (Print)	9781479901159
ISBN (Electronic)	978-147990116-6, 9781479901142
DOIs	https://doi.org/10.1109/EPE.2013.6634652
Publication status	Published - 2013
Event	European Conference on Power Electronics and Applications, EPE 2013 - Lille, France Duration: 3 Sept 2013 → 5 Sept 2013 http://www.epe2013.com/

Conference

Conference	European Conference on Power Electronics and Applications, EPE 2013
Country/Territory	France
City	Lille
Period	03/09/2013 → 05/09/2013
Internet address	http://www.epe2013.com/

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10.1109/EPE.2013.6634652

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title = "Test setup for long term reliability investigation of Silicon Carbide MOSFETs",

abstract = "Silicon Carbide MOSFETs are now widely available and have frequently been demonstrated to offer numerous advantages over Silicon based devices. However, reliability issues remain a significant concern in their realisation in commercial power electronic systems. In this paper, a test bench is designed that enables an accelerated power cycling test to be performed on packaged Silicon Carbide MOSFETs (TO-247) under realistic operating conditions. An accelerated power cycling test is then performed, with on-state resistance selected as the observed parameter to detect degradation. On-state resistance is routinely monitored online through the use of an innovative voltage measurement system. The packaged Silicon Carbide MOSFET is shown to exhibit a 25% increase in on-state resistance as the device ages throughout its lifetime, with the test still on-going.",

author = "Nick Baker and Stig Munk-Nielsen and Szymon Beczkowski",

year = "2013",

doi = "10.1109/EPE.2013.6634652",

language = "English",

isbn = "9781479901159",

booktitle = "Proceedings of the 15th European Conference on Power Electronics and Applications, EPE 2013",

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note = "European Conference on Power Electronics and Applications, EPE 2013, EPE ; Conference date: 03-09-2013 Through 05-09-2013",

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Baker, N, Munk-Nielsen, S & Beczkowski, S 2013, Test setup for long term reliability investigation of Silicon Carbide MOSFETs. in Proceedings of the 15th European Conference on Power Electronics and Applications, EPE 2013. IEEE Press, European Conference on Power Electronics and Applications, EPE 2013, Lille, France, 03/09/2013. https://doi.org/10.1109/EPE.2013.6634652

Test setup for long term reliability investigation of Silicon Carbide MOSFETs. / Baker, Nick; Munk-Nielsen, Stig ; Beczkowski, Szymon.
Proceedings of the 15th European Conference on Power Electronics and Applications, EPE 2013. IEEE Press, 2013.

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

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AU - Munk-Nielsen, Stig

AU - Beczkowski, Szymon

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N2 - Silicon Carbide MOSFETs are now widely available and have frequently been demonstrated to offer numerous advantages over Silicon based devices. However, reliability issues remain a significant concern in their realisation in commercial power electronic systems. In this paper, a test bench is designed that enables an accelerated power cycling test to be performed on packaged Silicon Carbide MOSFETs (TO-247) under realistic operating conditions. An accelerated power cycling test is then performed, with on-state resistance selected as the observed parameter to detect degradation. On-state resistance is routinely monitored online through the use of an innovative voltage measurement system. The packaged Silicon Carbide MOSFET is shown to exhibit a 25% increase in on-state resistance as the device ages throughout its lifetime, with the test still on-going.

AB - Silicon Carbide MOSFETs are now widely available and have frequently been demonstrated to offer numerous advantages over Silicon based devices. However, reliability issues remain a significant concern in their realisation in commercial power electronic systems. In this paper, a test bench is designed that enables an accelerated power cycling test to be performed on packaged Silicon Carbide MOSFETs (TO-247) under realistic operating conditions. An accelerated power cycling test is then performed, with on-state resistance selected as the observed parameter to detect degradation. On-state resistance is routinely monitored online through the use of an innovative voltage measurement system. The packaged Silicon Carbide MOSFET is shown to exhibit a 25% increase in on-state resistance as the device ages throughout its lifetime, with the test still on-going.

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DO - 10.1109/EPE.2013.6634652

M3 - Article in proceeding

SN - 9781479901159

BT - Proceedings of the 15th European Conference on Power Electronics and Applications, EPE 2013

PB - IEEE Press

T2 - European Conference on Power Electronics and Applications, EPE 2013

Y2 - 3 September 2013 through 5 September 2013

ER -

Test setup for long term reliability investigation of Silicon Carbide MOSFETs

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IEPE: Intelligent and Efficient Power Electronics (IEPE)

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Test setup for long term reliability investigation of Silicon Carbide MOSFETs

Abstract

Conference

Access to Document

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Fingerprint

Projects

IEPE: Intelligent and Efficient Power Electronics (IEPE)

Cite this