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Engineering
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Parasitic Capacitance
34%
Experimental Result
26%
Power Electronics
18%
DC-to-DC Converter
17%
Switching Frequency
17%
Simulation Result
16%
Power Converter
16%
Pulse Test
15%
Power Supply
15%
Zero Voltage Switching
15%
Battery (Electrochemical Energy Engineering)
14%
Transients
14%
Switching Loss
14%
Lithium-Ion Batteries
14%
Output Voltage
12%
Power Electronic Converter
12%
Semiconductor Device
12%
Test Setup
11%
Current Sensor
11%
Electrolyzer
11%
Thermal Performance
11%
Energy Engineering
11%
Limitations
10%
Control Strategy
10%
Nitride
10%
Electric Field
10%
Voltage Source Converter
9%
Common Mode
9%
Capacitive Coupling
9%
Power Device
9%
Baseplate
9%
Grid-Forming Converter
9%
Switching Speed
8%
Power Engineering
8%
Conductive
8%
Electric Field
8%
Light Load
8%
Battery Energy Storage
7%
Duty Cycle
7%
Power Loss
7%
Capacitive
7%
Dead Time
7%
Motor Drive
7%
Wide Bandgap Semiconductor
7%
Radio Frequency
7%
Self-Powered
7%
Printed Circuit Board
7%
Copper Substrate
6%
Induction Motor
6%
Modular Multilevel Converter
6%
Induction Heating
6%
Overvoltage
6%
Carbon Dioxide Capture
6%
Phase Locked Loop
6%
Output Power
6%
Energy Dissipation
6%
Wind Turbine
6%
Test Result
6%
Conversion Ratio
6%
Mosfets
6%
Current Transformer
6%
Interconnects
6%
Primary Side
6%
Thermal Resistance
6%
Junction Temperature
6%
Closed Loop
5%
Series Connection
5%
Nickel Manganese Cobalt
5%
Parasitic Element
5%
Current Measurement
5%
Secondary Side
5%
Transient Analysis
5%
Analytical Model
5%
Buck Converter
5%
Influencing Factor
5%
Electric Power Factor Correction
5%
Time Domain
5%
Carbon Capture
5%
Module Design
5%
Equivalent Circuit
5%
Input Voltage
5%
Cement Plant
5%
Mechanical Stress
5%
Keyphrases
Medium Voltage
22%
10 kV SiC MOSFET
20%
Inductors
11%
Parasitic Capacitance
9%
Grid Emulator
9%
Silicon Carbide (SiC) MOSFET
8%
Power Module
8%
Current Sensor
6%
Planar Winding
6%
Zero Voltage Switching
6%
Modular multilevel Converter
5%
Switching Losses
5%
Wind Turbine
5%
Silicon Carbide
5%
SiC MOSFET Module
5%
Series-connected
5%