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Publikationer 2013 2019

2019
6 Downloads (Pure)

Study of Current Density Influence on Bond Wire Degradation Rate in SiC MOSFET Modules

Luo, H., Iannuzzo, F., Baker, N., Blaabjerg, F., Li, W. & He, X., jun. 2019, I : IEEE Journal of Emerging and Selected Topics in Power Electronics.

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Silicon carbide
Current density
Wire
Degradation
Aging of materials
2 Citationer (Scopus)
56 Downloads (Pure)

The Temperature Dependence of the Flatband Voltage in High Power IGBTs

Baker, N. R. & Iannuzzo, F., jul. 2019, I : IEEE Transactions on Industrial Electronics. 66, 7, s. 5581 - 5584 4 s.

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Insulated gate bipolar transistors (IGBT)
Electric potential
Temperature
Temperature measurement
Power bipolar transistors
2018
1 Citation (Scopus)

Failure protection in power modules with auxiliary-emitter bondwires

Baker, N. & Iannuzzo, F., jan. 2018, I : PCIM Europe Conference Proceedings. 225809, s. 1051-1056 6 s.

Publikation: Bidrag til tidsskriftKonferenceartikel i tidsskriftForskningpeer review

Resistors
Explosions
Sensors
15 Downloads (Pure)

Impact of Kelvin-Source Resistors on Current Sharing and Failure Detection in Multichip Power Modules

Baker, N., Iannuzzo, F. & Li, H., sep. 2018, Proceedings of the 2018 20th European Conference on Power Electronics and Applications, EPE'18 ECCE Europe. IEEE Press, s. 1-7 7 s. 8515541

Publikation: Bidrag til bog/antologi/rapport/konference proceedingKonferenceartikel i proceedingForskningpeer review

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Resistors
Sensors
Electric current control
Silicon carbide
Semiconductor materials

Junction temperature measurement in a power semiconductor module

Baker, N. R., 17 maj 2018, IPC nr. G01K 7/16 (2006.01), Patentnr. WO/2018/086666, Prioritetsdato 8 nov. 2016

Publikation: PatentForskning

Åben adgang
Temperature measurement
Semiconductor materials
Temperature
Electric current control
Calibration
1 Citation (Scopus)
10 Downloads (Pure)

Smart SiC MOSFET accelerated lifetime testing

Baker, N. & Iannuzzo, F., sep. 2018, I : Microelectronics Reliability. 88-90, s. 43-47 5 s.

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field effect transistors
Semiconductor materials
life (durability)
Monitoring
Testing
2017
8 Citationer (Scopus)

Die degradation effect on aging rate in accelerated cycling tests of SiC power MOSFET modules

Luo, H., Baker, N., Iannuzzo, F. & Blaabjerg, F., sep. 2017, I : Microelectronics Reliability. 76-77, s. 415-419 5 s.

Publikation: Bidrag til tidsskriftKonferenceartikel i tidsskriftForskningpeer review

field effect transistors
modules
Aging of materials
degradation
Degradation
21 Citationer (Scopus)

IR Camera Validation of IGBT Junction Temperature Measurement via Peak Gate Current

Baker, N., Dupont, L., Munk-Nielsen, S., Iannuzzo, F. & Liserre, M., apr. 2017, I : I E E E Transactions on Power Electronics. 32, 4, s. 3099 - 3111 13 s.

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Insulated gate bipolar transistors (IGBT)
Temperature measurement
Cameras
Temperature
Temperature distribution
11 Citationer (Scopus)
115 Downloads (Pure)

Simultaneous On-State Voltage and Bond-Wire Resistance Monitoring of Silicon Carbide MOSFETs

Baker, N., Luo, H. & Iannuzzo, F., mar. 2017, I : Energies. 10, 3, 8 s.

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Field-effect Transistor
MOSFET devices
Silicon carbide
Oxides
Semiconductors
2016
991 Downloads (Pure)

An Electrical Method for Junction Temperature Measurement of Power Semiconductor Switches

Baker, N., 2016, Aalborg Universitetsforlag. 73 s. (Ph.d.-serien for Det Teknisk-Naturvidenskabelige Fakultet, Aalborg Universitet).

Publikation: Bog/antologi/afhandling/rapportPh.d.-afhandlingForskning

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Experimental Evaluation of IGBT Junction Temperature Measurement via a Modified-VCE (ΔVCE_ΔVGE) Method with Series Resistance Removal

Baker, N., Iannuzzo, F., Munk-Nielsen, S., Dupont, L. & Avenas, Y., mar. 2016, Proceedings of CIPS 2016; 9th International Conference on Integrated Power Electronics Systems. VDE Verlag GMBH, 6 s.

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Insulated gate bipolar transistors (IGBT)
Temperature measurement
Packaging materials
Electric potential
Temperature
37 Citationer (Scopus)

IGBT Junction Temperature Measurement via Peak Gate Current

Baker, N., Munk-Nielsen, S., Iannuzzo, F. & Liserre, M., maj 2016, I : IEEE Transactions on Power Electronics. 31, 5, s. 3784-3793 10 s., 7180393.

Publikation: Bidrag til tidsskriftTidsskriftartikelForskningpeer review

Insulated gate bipolar transistors (IGBT)
Temperature measurement
MOS devices
Electric potential
Resistors
2015
26 Citationer (Scopus)

Condition Monitoring: A Decade of Proposed Techniques

Avenas, Y., Dupont, L., Baker, N., Zara, H. & Barruel, F., dec. 2015, I : I E E E Industrial Electronics Magazine. 9, 4, s. 22-36

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Condition monitoring
Static converters
Redundancy
Power plants
Costs
6 Citationer (Scopus)

Experimental evaluation of IGBT junction temperature measurement via peak gate current

Baker, N., Munk-Nielsen, S., Iannuzzo, F., Dupont, L. & Liserre, M., sep. 2015, 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe), 2015. IEEE Press, s. 1-11 11 s.

Publikation: Bidrag til bog/antologi/rapport/konference proceedingKonferenceartikel i proceedingForskningpeer review

temperature measurement
evaluation
temperature
low currents
packaging
10 Citationer (Scopus)

Online junction temperature measurement using peak gate current

Baker, N., Munk-Nielsen, S., Iannuzzo, F. & Liserre, M., mar. 2015, Proceedings of the 2015 IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE Press, s. 1270-1275 6 s. 7104511. (I E E E Applied Power Electronics Conference and Exposition. Conference Proceedings).

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temperature measurement
frequency measurement
electric potential
resistors
converters
8 Citationer (Scopus)

Vce-based methods for temperature estimation of high power IGBT modules during power cycling - A comparison

Amoiridis, A., Anurag, A., Ghimire, P., Munk-Nielsen, S. & Baker, N., sep. 2015, Proceedings of the 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe). IEEE Press, 9 s.

Publikation: Bidrag til bog/antologi/rapport/konference proceedingKonferenceartikel i proceedingForskningpeer review

Insulated gate bipolar transistors (IGBT)
Temperature
Voltage drop
2014
74 Citationer (Scopus)

Improved reliability of power modules: A review of online junction temperature measurement methods

Baker, N., Liserre, M., Dupont, L. & Avenas, Y., 1 sep. 2014, I : IEEE Industrial Electronics Magazine. 8, 3, s. 17-27 11 s., 6899789.

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Electric vehicles
Power electronics
Temperature measurement
Aerospace industry
Power quality
26 Citationer (Scopus)

Online junction temperature measurement via internal gate resistance during turn-on

Baker, N., Munk-Nielsen, S., Liserre, M. & Iannuzzo, F., aug. 2014, Power Electronics and Applications (EPE'14-ECCE Europe), 2014 16th European Conference on. IEEE Press, 10 s.

Publikation: Bidrag til bog/antologi/rapport/konference proceedingKonferenceartikel i proceedingForskningpeer review

Temperature measurement
Semiconductor switches
Insulated gate bipolar transistors (IGBT)
Temperature
Networks (circuits)
2013
30 Citationer (Scopus)

Junction temperature measurements via thermo-sensitive electrical parameters and their application to condition monitoring and active thermal control of power converters

Baker, N., Liserre, M., Dupont, L. & Avenas, Y., nov. 2013, Proceedings of the 39th Annual Conference of the IEEE Industrial Electronics Society, IECON 2013. IEEE Press, s. 942-948 7 s. 6699260. (Proceedings of the Annual Conference of the IEEE Industrial Electronics Society).

Publikation: Bidrag til bog/antologi/rapport/konference proceedingKonferenceartikel i proceedingForskningpeer review

Condition monitoring
Power converters
Temperature measurement
Temperature
Power electronics
13 Citationer (Scopus)

Test setup for long term reliability investigation of Silicon Carbide MOSFETs

Baker, N., Munk-Nielsen, S. & Beczkowski, S., 2013, Proceedings of the 15th European Conference on Power Electronics and Applications, EPE 2013. IEEE Press, 9 s.

Publikation: Bidrag til bog/antologi/rapport/konference proceedingKonferenceartikel i proceedingForskningpeer review

Silicon carbide
Voltage measurement
Power electronics
Degradation
Silicon