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Simon Mosbjerg Jensen

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Giovanni Busatto

  • University of Naples Federico II
  • University of Cassino and Southern Lazio
  • National Institute for Nuclear Physics

Ekstern person

Carmine Abbate

  • University of Cassino and Southern Lazio
  • National Institute for Nuclear Physics

Ekstern person

Francesco Velardi.

  • Universita degli Studi di Cassino
  • University of Cassino and Southern Lazio
  • National Institute for Nuclear Physics

Ekstern person

Annunziata Sanseverino

  • Universita degli Studi di Cassino
  • University of Cassino and Southern Lazio
  • D.I.E.
  • University of Naples Federico II
  • National Institute for Nuclear Physics

Ekstern person

A. Porzio

  • University of Cassino and Southern Lazio

Ekstern person

Luigi Fratelli

  • Leonardo S.p.A.
  • University of Cassino and Southern Lazio
  • ANSALDOBREDA SPA

Ekstern person

G. Curro

  • STMicroelectronics

Ekstern person

G. Busatto

  • Universita degli Studi di Cassino
  • University of Cassino and Southern Lazio

Ekstern person

A. Sanseverino

  • Universita degli Studi di Cassino

Ekstern person

Xiangning He

  • Zhejiang University
  • College of Electrical Engineering, Zhejiang University

Ekstern person

Wuhua Li

  • Zhejiang University
  • College of Electrical Engineering, Zhejiang University

Ekstern person

F. Velardi

  • Universita degli Studi di Cassino

Ekstern person

B. Cascone

  • Leonardo S.p.A.
  • ANSALDOBREDA SPA

Ekstern person

Munaf Rahimo

  • ABB Group
  • MTAL GmbH

Ekstern person

J. Wyss

  • INFN Padova
  • DAEIMI University of Cassino
  • INFN - Sezione di Padova
  • University of Cassino and Southern Lazio
  • Fondazione Bruno Kessler

Ekstern person

A. Lanza

  • National Institute for Nuclear Physics

Ekstern person

C. Abbate

  • Universita degli Studi di Cassino
  • University of Cassino and Southern Lazio

Ekstern person

Paolo Cova

  • Dipartimento Ingegneria dell'Informazione, University of Parma
  • Dipartimento di Ingegneria Industriale, Università degli Studi di Parma
  • National Institute for Nuclear Physics

Ekstern person

S. Baccaro

  • Agenzia nazionale per le nuove tecnologie, l'energia e lo sviluppo economico sostenibile
  • National Institute for Nuclear Physics
  • ENEA UTTMAT

Ekstern person

M. Citterio

  • National Institute for Nuclear Physics

Ekstern person

M. Riva

  • University of Milan
  • National Institute for Nuclear Physics

Ekstern person

P. Cova

  • Dipartimento di Ingegneria Industriale, Università degli Studi di Parma
  • University of Parma

Ekstern person

Giuseppe Giannini

  • Leonardo S.p.A.
  • ANSALDOBREDA SPA

Ekstern person

G. Spiazzi

  • Universita degli Studi di Padova
  • INFN - Sezione di Padova

Ekstern person

V. De Luca

  • DIEI, Università Degli Studi di Cassino e Del Lazio Meridionale
  • National Institute for Nuclear Physics
  • University of Cassino and Southern Lazio

Ekstern person

N. Delmonte

  • Dipartimento di Ingegneria Industriale, Università degli Studi di Parma

Ekstern person

Mauro Ciappa

  • ETH
  • Swiss Federal Institute of Technology Zurich

Ekstern person

A. Paccagnella

  • Padova University
  • INFN - Sezione di Padova
  • Universita degli Studi di Padova

Ekstern person

S. Latorre

  • National Institute for Nuclear Physics

Ekstern person

Yaoqiang Duan

  • Huazhong University of Science and Technology

Ekstern person

R. Manzo

  • Leonardo S.p.A.
  • University of Cassino and Southern Lazio

Ekstern person

Marco Liserre

  • Power Electronics, Christian-Albrechts-University of Kiel

Ekstern person

M. Rahimo

  • MTAL GmbH

Ekstern person

Emre Gurpinar

  • University of Nottingham
  • Oak Ridge National Laboratory

Ekstern person

Liudmila Smirnova

  • Lappeenranta-Lahti University of Technology

Ekstern person

M. Alderighi

  • National Institute for Nuclear Physics
  • Istituto di Astrofisica Spaziale e Fisica Cosmica di Bologna

Ekstern person

Mohammad Tavakoli Bina

  • K.N. Toosi University of Technology

Ekstern person

Alberto Castellazzi

  • University of Nottingham

Ekstern person

F. Giuliani

  • Dipartimento di Ingegneria Industriale, Università degli Studi di Parma

Ekstern person

Gaudenzio Meneghesso

  • Padova University

Ekstern person

Shijo Nagao

  • The Institute of Scientific and Industrial Research (ISIR)
  • Osaka University

Ekstern person

C. Ronsisvalle

  • STMicroelectronics

Ekstern person

Katsuaki Suganuma

  • The Institute of Scientific and Industrial Research (ISIR)
  • Osaka University

Ekstern person

Laurent Dupont

  • Institut français des sciences et technologies des transports, de l'aménagement et des réseaux

Ekstern person

Fernando Gonzalez-Hernando

  • IK4-Ikerlan Technology Research Centre

Ekstern person

Wuhua Li

  • Zhejiang University

Ekstern person

Carlo Concari

  • University of Parma

Ekstern person

A. Cascio

  • STMicroelectronics

Ekstern person

M. Bernardoni

  • Dipartimento Ingegneria dell'Informazione, University of Parma
  • Dipartimento di Ingegneria Industriale, Università degli Studi di Parma

Ekstern person

S. Mattiazzo

  • Padova University
  • INFN Padova
  • Universita degli Studi di Padova
  • INFN - Sezione di Padova

Ekstern person

Davide Barater

  • University of Parma

Ekstern person

Kalle Ilves

  • ABB Group
  • Aalborg University

Ekstern person

Jon San-Sebastian

  • IK4-Ikerlan Technology Research Centre

Ekstern person

Alessandro Soldati

  • University of Parma

Ekstern person

L. Silvestrin

  • Padova University
  • INFN Padova
  • Universita degli Studi di Padova
  • INFN - Sezione di Padova

Ekstern person

Keting Hu

  • Southwest Jiaotong University

Ekstern person

Giovanni Susinni

  • University of Catania

Ekstern person

Nicola Delmonte

  • Dipartimento di Ingegneria Industriale, Università degli Studi di Parma
  • National Institute for Nuclear Physics

Ekstern person

A. Candelori

  • INFN - Sezione di Padova
  • National Institute for Nuclear Physics

Ekstern person

B. Abbate

  • University of Cassino and Southern Lazio

Ekstern person

Santi Agatino Rizzo

  • University of Catania

Ekstern person

P. Tenti

  • Padova University
  • Universita degli Studi di Padova

Ekstern person

Daniel Montesinos-Miracle

  • Polytechnic University of Catalonia

Ekstern person

Manuel Arias

  • University of Oviedo

Ekstern person

F. Frisina

  • STMicroelectronics

Ekstern person

R. Menozzi

  • Dipartimento Ingegneria dell'Informazione, University of Parma
  • Dipartimento di Ingegneria Industriale, Università degli Studi di Parma

Ekstern person

X F He

  • China University of Mining and Technology

Ekstern person

D. Pantano

  • Padova University
  • INFN Padova
  • INFN - Sezione di Padova
  • Universita degli Studi di Padova

Ekstern person

F. Sichirollo

  • Padova University

Ekstern person

Chuantong Chen

  • The Institute of Scientific and Industrial Research (ISIR)
  • Osaka University

Ekstern person

G. Curr

  • STMicroelectronics

Ekstern person

M. Stellini

  • Padova University

Ekstern person

D. Bisello

  • Padova University
  • INFN Padova
  • INFN - Sezione di Padova
  • Universita degli Studi di Padova

Ekstern person

Bernhard Czerny

  • Vienna University of Technology

Ekstern person

Samuel Galceran-Arellano

  • Polytechnic University of Catalonia

Ekstern person

Haoze Luo

  • Zhejiang University

Ekstern person

Fei Xiao

  • Naval University of Engineering Wuhan

Ekstern person

P. Giubilato

  • Padova University
  • INFN - Sezione di Padova
  • Universita degli Studi di Padova

Ekstern person

zhigang Liu

  • School of Electrical Engineering, Southwest Jiaotong University
  • Southwest Jiaotong University
  • Beijing Jiaotong University
  • Beijing Engineering Research Center for Electrical Rail Transit

Ekstern person

Chengmin Li

  • IEL PEL
  • Zhejiang University

Ekstern person

M. Tessaro

  • INFN Padova
  • INFN - Sezione di Padova

Ekstern person

A. Costabeber

  • Padova University

Ekstern person

J. Zhang

  • Northwestern Polytechnical University Xian
  • China University of Mining and Technology
  • University of Electronic Science and Technology of China
  • North University of China
  • Ministry of Industry and Information Technology
  • Hohai University
  • Technical University of Denmark
  • China University of Petroleum

Ekstern person

Giovanni Vito Persiano

  • University of Naples Federico II

Ekstern person

M. Lazzaroni

  • Dipartimento di Fisica, Politecnico di Milano
  • Università degli Studi di Milano
  • National Institute for Nuclear Physics
  • University of Milan

Ekstern person

Golta Khatibi

  • Vienna University of Technology

Ekstern person

Xiangning He

  • Zhejiang University

Ekstern person

Wuhua Li

  • Zhejiang University

Ekstern person

E. Zanoni

  • Padova University
  • Universita degli Studi di Padova

Ekstern person

G. Meneghesso

  • Padova University
  • Universita degli Studi di Padova

Ekstern person

R. Silvestri

  • Padova University
  • Universita degli Studi di Padova

Ekstern person

D. Tedesco

  • Universita degli Studi di Cassino
  • University of Cassino and Southern Lazio

Ekstern person

S. Gerardin

  • Padova University
  • INFN - Sezione di Padova
  • Universita degli Studi di Padova

Ekstern person

Muhammad Nawaz

  • Technical University of Denmark

Ekstern person

Guicui Fu

  • Beihang University

Ekstern person

E. Ghisolfi

  • FN S.p.A.

Ekstern person

Marcello Turnaturi

  • Vishay Semiconductor Italiana

Ekstern person

Asier Garcia-Bediaga

  • IK4-Ikerlan Technology Research Centre

Ekstern person

Fabrizio Dossena

  • University of Parma

Ekstern person

S. Fiore

  • National Institute for Nuclear Physics
  • ENEA UTTMAT

Ekstern person

Yongheng Yang

  • Zhejiang University

Ekstern person

F. Rampazzo

  • Padova University
  • Universita degli Studi di Padova

Ekstern person

V. Enea

  • STMicroelectronics

Ekstern person

Gang Zhang

  • School of Automation Engineering, University of Electronic Science and Technology of China, Chengdu, China

Ekstern person

Haoze Luo

  • Zhejiang University

Ekstern person

Juha Pyrhönen

  • Lappeenranta-Lahti University of Technology

Ekstern person

M. Valentino

  • CRS INFM Coherentia

Ekstern person

Muhammad Nawaz

  • ABB Group

Ekstern person

Jyothsna Murli Rao

  • Technical University of Denmark

Ekstern person

Maogong Jiang

  • Beihang University

Ekstern person

C. Pagliarone

  • University of Cassino and Southern Lazio

Ekstern person

Susanne Otto

  • FORCE Technology

Ekstern person

S. Jørgensen

  • Grundfos DK AS

Ekstern person

P. Cristofaro

  • University of Cassino and Southern Lazio

Ekstern person

Per Thåstrup Jensen

  • FORCE Technology

Ekstern person

Tomas Lledo-Ponsati

  • Polytechnic University of Catalonia

Ekstern person

Yifei Luo

  • Naval University of Engineering Wuhan

Ekstern person

A. Cavagnoli

  • Top Rel

Ekstern person

H. Luo

  • China University of Mining and Technology
  • China Shenhua Energy Co. Ltd.

Ekstern person

Kalle Ilves

  • ABB Group

Ekstern person

Yong Kang

  • State Key Lab of Advanced Electromagnetic Engineering and Technology, Huazhong University of Science and Technology
  • Huazhong University of Science and Technology

Ekstern person

Lauren Ostrander

  • University of Alabama

Ekstern person

John Austin

  • University of Alabama

Ekstern person

Helene Conseil Gudla

  • Technical University of Denmark

Ekstern person

Jianlong Kang

  • Hebei University of Technology
  • Zhejiang University

Ekstern person

V. Micali

  • Micron Technology Italia

Ekstern person

Z. John Shen

  • Illinois Institute of Technology

Ekstern person

Ole Kristensen

  • ABB Group

Ekstern person

Alejandro Rujas

  • IK4-Ikerlan Technology Research Centre

Ekstern person

M. Balsamo

  • University of Cassino and Southern Lazio

Ekstern person

A. Ruggiero

  • University of Cassino and Southern Lazio

Ekstern person

Wei Lai

  • Chongqing University

Ekstern person

Qiang Wu

  • Zhejiang University

Ekstern person

Y. Jiang

  • China University of Mining and Technology
  • Clarkson University
  • University of California at San Diego

Ekstern person

Elise Varescon

  • ABB Group

Ekstern person

G. A.P. Cirrone

  • National Institute for Nuclear Physics

Ekstern person

Nicola Schulz

  • University of Applied Sciences Northwestern Switzerland

Ekstern person

G. Valeri

  • Micron Technology Italia

Ekstern person

Sebastian Letz

  • Fraunhofer Institute for Integrated Systems and Device Technology

Ekstern person

Weixing Lin

  • TBEA Sunoasis Company LTD.

Ekstern person

Andreas Schletz

  • Fraunhofer Institute for Integrated Systems and Device Technology

Ekstern person

Weifeng Zhang

  • Nanjing University of Posts and Telecommunications
  • China University of Mining and Technology

Ekstern person

D. Marroqui

  • Industrial Electronics Group (IE-g) Miguel Hernandez University of Elche

Ekstern person

Federico Belloni

  • Dipartimento di Ingegneria Industriale, Università degli Studi di Parma
  • National Institute for Nuclear Physics

Ekstern person

Homer Alan Mantooth

  • University of Arkansas System

Ekstern person

Thomas Gloor

  • ABB Group

Ekstern person

Kristian Pedersen

  • Vestas Wind Systems AS

Ekstern person

Anish Rao Lakkaraju

  • Technical University of Denmark

Ekstern person

P. Maranesi

  • University of Milan

Ekstern person

Y. Jia

  • Meta

Ekstern person

Wuhua Li

  • Zhejiang University

Ekstern person

Andy Lemmon

  • University of Alabama

Ekstern person

Shuhei Takata

  • Osaka University
  • The Institute of Scientific and Industrial Research (ISIR)

Ekstern person

A. Raciti

  • National Research Council of Italy

Ekstern person

YunWei Li

  • University of Alberta

Ekstern person

G. M. Piacentino

  • University of Cassino and Southern Lazio

Ekstern person

Roberto Roncella

  • University of Pisa

Ekstern person

Davide Cittanti

  • Polytechnic University of Turin

Ekstern person

Giorgio Pietrini

  • University of Parma

Ekstern person

H. Luo

  • Northeastern University China
  • Key Laboratory of Dielectric and Electrolyte Functional Material Hebei Province
  • Qinhuangdao Laboratory of Resources Cleaner Conversion and Efficient Utilization
  • Ltd

Ekstern person

Kai Li

  • School of Automation Engineering, University of Electronic Science and Technology of China, Chengdu, China
  • University of Electronic Science and Technology of China

Ekstern person

Muhammad Nawaz

  • ABB Group

Ekstern person

Sajjad Bahrebar

  • Technical University of Denmark

Ekstern person

A. Kaminksy

  • INFN - Sezione di Padova

Ekstern person

A. Garrigos

  • Industrial Electronics Group (IE-g) Miguel Hernandez University of Elche

Ekstern person

Rajan Ambat

  • Technical University of Denmark

Ekstern person

Stefanie Miller

  • ABB Group

Ekstern person

Rajan Ambat

  • Technical University of Denmark

Ekstern person

F. Bedeschi

  • National Institute for Nuclear Physics

Ekstern person

R. Minamisawa

  • University of Applied Sciences Northwestern Switzerland

Ekstern person

Roberto La Capruccia

  • University of Cassino and Southern Lazio

Ekstern person

J. M. Blanes

  • Industrial Electronics Group (IE-g) Miguel Hernandez University of Elche

Ekstern person

M. Di Zenzo

  • Micron Technology Italia

Ekstern person

Vde Luca

  • University of Cassino and Southern Lazio

Ekstern person

Thomas Goetz

  • Fraunhofer Institute for Integrated Systems and Device Technology

Ekstern person

Fujun Zheng

  • Zhejiang University

Ekstern person

F. Velardia

  • University of Cassino and Southern Lazio

Ekstern person

S. Buso

  • Universita degli Studi di Padova

Ekstern person

H. Wong

  • Siemens

Ekstern person

Wuhua GAE Li

  • Zhejiang University

Ekstern person

Zhongyi Quan

  • University of Alberta

Ekstern person

Xiangning He

  • Zhejiang University

Ekstern person

Kalle Ilves

  • ABB Group

Ekstern person

Søren Jørgensen

  • Grundfos DK AS

Ekstern person

Ramchandra M. Kotecha

  • University of Arkansas System

Ekstern person

R. Ø. Nielsen

  • Grundfos DK AS

Ekstern person

Emilio Mattiuzzo

  • Vishay Semiconductor Italiana

Ekstern person

Roberto Gutiérrez

  • Gamesa Innovation and Technology, Madrid
  • Industrial Electronics Group (IE-g) Miguel Hernandez University of Elche

Ekstern person

Nikolaos Bezentes

  • Aalborg University

Ekstern person

N. Bonora

  • University of Cassino and Southern Lazio

Ekstern person

Ramchandra Kotecha

  • University of Arkansas System

Ekstern person

T. Holmgaard

  • Grundfos DK AS

Ekstern person

E. Maset

  • University of Valencia

Ekstern person

Alan Mantooth

  • Department of Electrical Engineering, University of Arkansas
  • University of Arkansas System

Ekstern person

Ting Ting Hou

  • CAS - Institute of Microbiology
  • University of Chinese Academy of Sciences

Ekstern person

G. P. Pepe

  • CRS INFM Coherentia

Ekstern person

Yu Chen

  • Zhejiang University

Ekstern person

Timothy C. Papadopoulos

  • Department of Psychology and Center for Applied Neuroscience University of Cyprus
  • ABB Group

Ekstern person

Martin Iriondo Gascue

  • Aalborg University

Ekstern person

Hongbing Xu

  • School of Automation Engineering, University of Electronic Science and Technology of China, Chengdu, China

Ekstern person

Kirill Klein

  • Fraunhofer IZM

Ekstern person

Daniele Marciano

  • University of Cassino and Southern Lazio

Ekstern person

Ibrahim Adamu Tasiu

  • Southwest Jiaotong University

Ekstern person

Muhammad Nawaz

  • Sindh University, Jamshoro Pakistan
  • ABB Group

Ekstern person

Charles Leduc

  • OpSens Solutions Inc.

Ekstern person

D. Elangovan

  • Vellore Institute of Technology

Ekstern person

G. Kiran Kumar

  • Vellore Institute of Technology

Ekstern person

Eckart Hoene

  • Fraunhofer IZM

Ekstern person

E. Parimalasundar

  • Jawaharlal Nehru Technological University

Ekstern person

R. Matizo

  • ANSALDOBREDA SPA

Ekstern person

Christian Holm Christiansen

  • Danish Technological Institute

Ekstern person

Francesco Giuliani

  • Dipartimento di Ingegneria Industriale, Università degli Studi di Parma

Ekstern person

E. La Marra

  • University of Cassino and Southern Lazio

Ekstern person

Xiang Wang

  • Zhejiang University

Ekstern person

C. Meroni

  • National Institute for Nuclear Physics

Ekstern person

Bahman Eskandari

  • K.N. Toosi University of Technology

Ekstern person

Jian Zhang

  • Zhejiang University

Ekstern person

Samuel Galceran Arellano

  • Tech. Univ. of Catalunya

Ekstern person