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20162021
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Publikationer 2016 2019

  • 8 Konferenceartikel i proceeding
  • 5 Konferenceartikel i tidsskrift
  • 1 Bidrag til bog/antologi
  • 1 Tidsskriftartikel
2019
5 Downloads (Pure)

Impact of the Case Temperature on the Reliability of SiC MOSFETs Under Repetitive Short Circuit Tests

Du, H., Reigosa, P. D., Iannuzzo, F. & Ceccarelli, L., mar. 2019, Proceedings of 2019 IEEE Annual Applied Power Electronics Conference and Exposition (APEC 2019). IEEE Press, s. 332-337 6 s.

Publikation: Bidrag til bog/antologi/rapport/konference proceedingKonferenceartikel i proceedingForskningpeer review

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Short circuit currents
Temperature
Bias voltage
Leakage currents
Wire

Implications of short-circuit events on power cycling of 1.2-kV/20-A SiC MOSFET power modules

Du, H., Ceccarelli, L., Iannuzzo, F. & Reigosa, P. D., 2019, (Accepteret/In press) I : Microelectronics Reliability.

Publikation: Bidrag til tidsskriftKonferenceartikel i tidsskriftForskningpeer review

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short circuits
Short circuit currents
field effect transistors
cycles
degradation
1 Citation (Scopus)
14 Downloads (Pure)

Mission-Profile-Based Lifetime Prediction for a SiC mosfet Power Module Using a Multi-Step Condition-Mapping Simulation Strategy

Ceccarelli, L., Kotecha, R. M., Bahman, A. S., Iannuzzo, F. & Mantooth, H. A., okt. 2019, I : IEEE Transactions on Power Electronics. 34, 10, s. 9698-9708 11 s., 8616890.

Publikation: Bidrag til tidsskriftTidsskriftartikelForskningpeer review

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Topology
Power converters
Reliability analysis
Specifications
Finite element method
2018
1 Citation (Scopus)

An Improved Physics-based LTSpice Compact Electro-Thermal Model for a SiC Power MOSFET with Experimental Validation

Hossain, M. M., Ceccarelli, L., Rashid, A. U., Kotecha, R. & Mantooth, H. A., okt. 2018, Proceedings of IECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society. IEEE, s. 1011-1016 6 s. (Proceedings of the Annual Conference of the IEEE Industrial Electronics Society).

Publikation: Bidrag til bog/antologi/rapport/konference proceedingKonferenceartikel i proceedingForskningpeer review

Physics
Computer hardware description languages
Parameter extraction
Switches
Topology
1 Citation (Scopus)
8 Downloads (Pure)

Effect of short-circuit stress on the degradation of the SiO2 dielectric in SiC power MOSFETs

Reigosa, P. D., Iannuzzo, F. & Ceccarelli, L., sep. 2018, I : Microelectronics Reliability. 88-90, s. 577-583 7 s.

Publikation: Bidrag til tidsskriftKonferenceartikel i tidsskriftForskningpeer review

short circuits
Leakage currents
Short circuit currents
field effect transistors
degradation
48 Downloads (Pure)

Failure analysis of a degraded 1.2 kV SiC MOSFET after short circuit at high temperature

Reigosa, P. D., Iannuzzo, F. & Ceccarelli, L., jul. 2018, Proceedings of the IPFA 2018 - 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IEEE Press, Bind 2018-July. s. 1-5 5 s. 8452575. (IEEE International Symposium on Physical & Failure Analysis of Integrated Circuit (IPFA)).

Publikation: Bidrag til bog/antologi/rapport/konference proceedingKonferenceartikel i proceedingForskningpeer review

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Fil
Short circuit currents
Failure analysis
Electric potential
Temperature
Focused ion beams
39 Downloads (Pure)

Fast Electro-thermal Simulation Strategy for SiC MOSFETs Based on Power Loss Mapping

Ceccarelli, L., Kotecha, R., Iannuzzo, F. & Mantooth, A., nov. 2018, Proceedings of the 2018 IEEE International Power Electronics and Application Conference and Exposition, PEAC 2018. IEEE Press, s. 1-6 6 s. 8590288

Publikation: Bidrag til bog/antologi/rapport/konference proceedingKonferenceartikel i proceedingForskningpeer review

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Fil
Circuit simulation
Power electronics
Topology
Finite element method
Hot Temperature
14 Downloads (Pure)

Investigating SiC MOSFET body diode's light emission as temperature-sensitive electrical parameter

Ceccarelli, L., Luo, H. & Iannuzzo, F., sep. 2018, I : Microelectronics Reliability. 88-90, s. 627-630 4 s.

Publikation: Bidrag til tidsskriftKonferenceartikel i tidsskriftForskningpeer review

Light emission
light emission
Diodes
field effect transistors
diodes
1 Citation (Scopus)
20 Downloads (Pure)

Investigation on the degradation indicators of short-circuit tests in 1.2 kV SiC MOSFET power modules

Du, H., Reigosa, P. D., Iannuzzo, F. & Ceccarelli, L., 1 sep. 2018, I : Microelectronics Reliability. 88-90, s. 661-665 5 s.

Publikation: Bidrag til tidsskriftKonferenceartikel i tidsskriftForskningpeer review

short circuits
Short circuit currents
field effect transistors
static characteristics
degradation
1 Citation (Scopus)
93 Downloads (Pure)

Non-uniform Temperature Distribution Implications on Thermal Analysis Accuracy of Si IGBTs and SiC MOSFETs

Akbari, M., Bahman, A. S., Reigosa, P. D., Ceccarelli, L., Iannuzzo, F. & Tavakoli Bina, M., sep. 2018, Proceedings of the 2018 24rd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC). IEEE Press, s. 1-6 6 s. (International Workshop on Thermal Investigations of ICs and Systems).

Publikation: Bidrag til bog/antologi/rapport/konference proceedingKonferenceartikel i proceedingForskningpeer review

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Fil
Insulated gate bipolar transistors (IGBT)
MOSFET devices
Thermoanalysis
Temperature distribution
Semiconductor materials
2017
6 Citationer (Scopus)
457 Downloads (Pure)

A Fast Electro-Thermal Co-Simulation Modeling Approach for SiC Power MOSFETs

Ceccarelli, L., Bahman, A. S., Iannuzzo, F. & Blaabjerg, F., mar. 2017, Proceedings of the 2017 IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE Press, s. 966-973 8 s. (IEEE Applied Power Electronics Conference and Exposition (APEC)).

Publikation: Bidrag til bog/antologi/rapport/konference proceedingKonferenceartikel i proceedingForskningpeer review

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Fil
Computer simulation
High temperature operations
MATLAB
Energy dissipation
Finite element method
14 Citationer (Scopus)
5 Downloads (Pure)

A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis

Ceccarelli, L., Reigosa, P. D., Iannuzzo, F. & Blaabjerg, F., sep. 2017, I : Microelectronics Reliability. 76-77, s. 272-276 5 s.

Publikation: Bidrag til tidsskriftKonferenceartikel i tidsskriftForskningpeer review

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Fil
failure modes
short circuits
Short circuit currents
Failure modes
field effect transistors
2 Citationer (Scopus)
49 Downloads (Pure)

Compact electro-thermal modeling of a SiC MOSFET power module under short-circuit conditions

Ceccarelli, L., Reigosa, P. D., Bahman, A. S., Iannuzzo, F. & Blaabjerg, F., okt. 2017, Proceedings of 43rd Annual Conference of the IEEE Industrial Electronics Society, IECON 2017. IEEE Press, s. 4879-4884 6 s. (Proceedings of the Annual Conference of the IEEE Industrial Electronics Society).

Publikation: Bidrag til bog/antologi/rapport/konference proceedingKonferenceartikel i proceedingForskningpeer review

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Fil
Short circuit currents
Electric breakdown
Threshold voltage
Silicon carbide
Leakage currents

Power Electronics and Drive Systems

Blaabjerg, F., Iannuzzo, F. & Ceccarelli, L., nov. 2017, Multiphysics Simulation by Design for Electrical Machines, Power Electronics and Drives. Rosu, M., Zhou, P., Lin, D., Ionel, D., Popescu, M., Blaabjerg, F., Rallabandi, V. & Staton, D. (red.). Wiley-IEEE press, s. 251-281 31 s.

Publikation: Bidrag til bog/antologi/rapport/konference proceedingBidrag til bog/antologiForskningpeer review

Power electronics
Networks (circuits)
Switches
2016
8 Citationer (Scopus)
506 Downloads (Pure)

PSpice Modeling Platform for SiC Power MOSFET Modules with Extensive Experimental Validation

Ceccarelli, L., Iannuzzo, F. & Nawaz, M., sep. 2016, Proceedings of 8th IEEE Energy Conversion Congress and Exposition, 2016: ECCE 2016. IEEE Press, 8 s.

Publikation: Bidrag til bog/antologi/rapport/konference proceedingKonferenceartikel i proceedingForskningpeer review

Åben adgang
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Parameter extraction
Graphical user interfaces
MATLAB
Physics
Topology