Peng Xue

Publikationer

Publikationer pr. år 2014 2016 2017 2019 2020 2022 2023 2023

• 23 Tidsskriftartikel
• 4 Konferenceartikel i proceeding

Publikationer pr. år

Publikationer pr. år

Søgeresultater

• 2023

  A Temperature-Dependent dVCE/dt and dIC/dt Model for Field-Stop IGBT at Turn-on Transient

  Xue, P. & Davari, P., 1 jun. 2023, I: IEEE Transactions on Power Electronics . 38, 6, s. 7128-7141 14 s.

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  • Insulated Gate Bipolar Transistor 100%
  • Models 100%
  • Transients 100%
  • Fields 100%
  • Bipolar Transistor 100%
  1 Citationer (Scopus)

  113 Downloads (Pure)

• A Temperature-Dependent dVCE/dt model for Field-Stop IGBT at Turn-off Transient

  Xue, P. & Davari, P., 1 jun. 2023, I: I E E E Journal of Emerging and Selected Topics in Power Electronics. 11, 3, s. 3173-3183 11 s.

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  • Models 100%
  • Transients 100%
  • Fields 100%
  • Insulated Gate Bipolar Transistor 50%
  • Good Agreement 16%
  1 Citationer (Scopus)

  102 Downloads (Pure)

• Ferrite Beads Design to Improve Turn-off Characteristics of Cascode GaN HEMTs: An Optimum Design Method

  Xue, P. & Iannuzzo, F., 1 jun. 2023, I: IEEE Journal of Emerging and Selected Topics in Power Electronics. 11, 3, s. 3184-3194 11 s., 10097721.

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  Fil

  • Optimum Design 100%
  • Transistor 100%
  • Nitride 100%
  • Characteristics 100%
  • Design 100%
  300 Downloads (Pure)

• Low Inductive Characterization of Fast-Switching SiC MOSFETs and Active Gate Driver Units

  Philipps, D. A., Xue, P., Ubostad, T. N., Iannuzzo, F. & Peftitsis, D., 1 sep. 2023, I: I E E E Transactions on Industry Applications. 59, 5, s. 6384-6398 15 s., 10144375.

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  • Metal-Oxide-Semiconductor Field-Effect Transistor 100%
  • Test Circuit 33%
  • Prototype 16%
  • Voltage Source 16%
  • Power Device 16%
  1 Citationer (Scopus)
• 2022

  Application-Oriented Reliability Testing of Power Electronic Components and Converters

  Wang, H., Iannuzzo, F., Bahman, A. S., Zhang, K., Xue, P., Zhang, Y., Yao, B., Shen, Z., Sangwongwanich, A., Vernica, I., Song, Y., Sahoo, S. & Blaabjerg, F., dec. 2022, I: IEEE Power Electronics Magazine . 9, 4, s. 22-31 10 s., 10014625.

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  Fil

  • Power Electronics 100%
  • Field Operation 40%
  • Facilities 40%
  • Reliability Analysis 20%
  • Energy Conservation 20%
  3 Citationer (Scopus)

  159 Downloads (Pure)

• Prediction of the electrochemical migration induced failure on power PCBs under humidity condition — A case study

  Xue, P., Bahman, A. S., Iannuzzo, F., Gudla, H. C., Lakkaraju, A. R. & Ambat, R., dec. 2022, I: Microelectronics Reliability. 139, 114796.

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  • Printed Circuit Board 100%
  • Induced Failure 100%
  • Electronic Circuit 100%
  • Organic Acid 100%
  • Electrochemical Reaction 28%
  2 Citationer (Scopus)

  29 Downloads (Pure)

• Self-Sustained Turn-OFF Oscillation of Cascode GaN HEMTs: Occurrence Mechanism, Instability Analysis, and Oscillation Suppression

  Xue, P. & Iannuzzo, F., 1 maj 2022, I: IEEE Transactions on Power Electronics . 37, 5, s. 5491-5500 10 s.

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  • Models 100%
  • Mechanisms 100%
  • Pitch (Inclination) 100%
  • Retarding 100%
  • Occurrence 100%
  12 Citationer (Scopus)

  128 Downloads (Pure)
• 2020

  A Comprehensive Investigation on Short-Circuit Oscillation of p-GaN HEMTs

  Xue, P., Maresca, L., Riccio, M., Breglio, G. & Irace, A., 2020, I: IEEE Transactions on Electron Devices. 67, 11, s. 4849-4857 9 s.

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  10 Citationer (Scopus)

• Experimental Study on the Short-Circuit Instability of Cascode GaN HEMTs

  Xue, P., Maresca, L., Riccio, M., Breglio, G. & Irace, A., 2020, I: IEEE Transactions on Electron Devices. 67, 4, s. 1686 - 1692

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  • Experimental Study 100%
  • Short Circuit 100%
  • Gallium Nitride 100%
  • High Electron Mobility Transistors 100%
  • Transistor 100%
  14 Citationer (Scopus)

• Investigation on the Short-Circuit Oscillation of Cascode GaN HEMTs

  Xue, P., Maresca, L., Riccio, M., Breglio, G. & Irace, A., jun. 2020, I: IEEE Transactions on Power Electronics . 35, 6, s. 6292 - 6300

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  • Nitride 100%
  • Feedback Loop 50%
  • SPICE 33%
  • Mosfets 33%
  • Positive Feedback Loop 33%
  21 Citationer (Scopus)
• 2019

  Analysis on the Self-Sustained Oscillation of SiC MOSFET Body Diode

  Xue, P., Maresca, L., Riccio, M., Breglio, G. & Irace, A., okt. 2019, I: IEEE Transactions on Electron Devices. 66, 10, s. 4287-4295 9 s., 8824212.

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  • Metal-Oxide-Semiconductor Field-Effect Transistor 100%
  • Pitch (Inclination) 100%
  • Field Effect Transistor 100%
  • Oscillation 100%
  • Bridge Circuits 40%
  16 Citationer (Scopus)

• Investigation on the Self-Sustained Oscillation of Superjunction MOSFET Intrinsic Diode

  Xue, P., Maresca, L., Riccio, M., Breglio, G. & Irace, A., 2019, I: IEEE Transactions on Electron Devices. 66, 1, s. 605-612 8 s.

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  • Pitch (Inclination) 100%
  • Field Effect Transistor 100%
  • Investigation 100%
  • Metal-Oxide-Semiconductor Field-Effect Transistor 100%
  • Sustained Oscillation 100%
  9 Citationer (Scopus)

• Self-Sustained Turn-Off Oscillation of SiC MOSFETs: Origin, Instability Analysis, and Prevention

  Xue, P., Maresca, L., Riccio, M., Breglio, G. & Irace, A., jun. 2019, I: Energies. 12, 11, 2211.

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  • Metal-Oxide-Semiconductor Field-Effect Transistor 100%
  • Oscillatory 80%
  • Damping Ratio ζ 20%
  • Networks (Circuits) 20%
  • Ac Signal 20%
  11 Citationer (Scopus)
• 2018

  Failure analysis of solder layer in power transistor

  Jiang, M., Fu, G., Wan, B., Xue, P., Qiu, Y. & Li, Y., 2018, I: Soldering Surface Mount Technology. 30, 1, s. 49-56 8 s.

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  11 Citationer (Scopus)
• 2017

  Analysis of the dynamic avalanche of carrier stored trench bipolar transistor (CSTBT) during clamped inductive turn-off transient

  Xue, P. & Fu, G., 2017, I: Solid-State Electronics.

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  3 Citationer (Scopus)

• Analysis of the reverse recovery oscillation of superjunction MOSFET body diode

  Xue, P. & Fu, G., 2017, I: Solid-State Electronics. 129, s. 81-87 7 s.

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  4 Citationer (Scopus)

• Investigation on intermittent life testing program for IGBT

  Cheng, Y., Fu, G., Jiang, M. & Xue, P., 2017, I: Journal of Power Electronics. 17, 3, s. 811-820 10 s.

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  9 Citationer (Scopus)

• Modeling Inductive Switching Characteristics of High-Speed Buffer Layer IGBT

  Xue, P., Fu, G. & Zhang, D., 2017, I: IEEE Transactions on Power Electronics . 32, 4, s. 3075-3087 13 s.

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  • Insulated Gate Bipolar Transistor 100%
  • Characteristics 100%
  • Buffer Layer 100%
  • Bipolar Transistor 100%
  • Models 80%
  41 Citationer (Scopus)
• 2016

  An excess carrier lifetime extraction method for physics-based IGBT models

  Fu, G. & Xue, P., 2016, I: Journal of Power Electronics. 16, 2, s. 778-785 8 s.

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  6 Citationer (Scopus)

• Comprehensive physics-based compact model for fast p-i-n diode using MATLAB and Simulink

  Xue, P., Fu, G. & Zhang, D., jul. 2016, I: Solid-State Electronics. 121, s. 1-11 11 s.

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  • Models 100%
  • Design Concept 40%
  • Injection Level 40%
  • Experiments 40%
  • Fields 40%
  5 Citationer (Scopus)

• Physics-based compact model for the EMCON p--i--n diode using MATLAB and Simulink

  Xue, P., Fu, G. & Zhang, D., 2016, I: IET Power Electronics. 9, 12, s. 2416-2424 9 s.

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  2 Citationer (Scopus)

• Physics-based model of LPT CSTBT including MOS-side two-dimensional effects

  Fu, G. & Xue, P., 2016, I: IET Power Electronics. 9, 5, s. 1019-1028 10 s.

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  4 Citationer (Scopus)
• 2014

  Multivariate storage degradation modeling based on copula function

  Xiaogang, L. & Peng, X., 2014, I: Advances in Mechanical Engineering. 2014, 503407.

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  • Copula 100%
  • Modeling 100%
  • Models 100%
  • Temperature 100%
  • Wiener Process 66%
  10 Citationer (Scopus)