Engineering
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Parasitic Capacitance
22%
Pulse Test
19%
Capacitive Coupling
18%
Experimental Result
15%
Transients
15%
SPICE
14%
Semiconductor Device
14%
Nitride
14%
Test Setup
13%
Radio Frequency
13%
Power Supply
13%
Self-Powered
13%
Common Mode
13%
Wide Bandgap Semiconductor
13%
Thermal Characteristic
11%
Thermal Resistance
11%
Printed Circuit Board
11%
Simulation Model
10%
Thermal Performance
10%
Power Electronics
10%
Baseplate
10%
Power Device
10%
Switching Speed
10%
Design Process
9%
Energy Gap
8%
Power Converter
8%
Series System
8%
DC-to-DC Converter
8%
Induction Heating
8%
Thermal Simulation
7%
Switching Loss
7%
Switching Frequency
7%
Design Consideration
7%
Module Design
6%
Energy Dissipation
6%
Fourth Order
6%
Parasitic Element
6%
Engineering Student
6%
Bonding Wire
5%
Power Cycle
5%
Heatsinks
5%
Frequency Converter
5%
Magnetic Core
5%
Link Voltage
5%
Finite Element Method
5%
Liquid Cooling
5%
Delamination
5%
Dielectrics
5%
Gap Semiconductor
5%
Keyphrases
Medium Voltage
9%
Capacitance Modeling
8%
Resonant Converter
8%
Small Submodules
8%
10 kV SiC MOSFET
8%
SiC MOSFET
8%
Power Module
7%
Semiconductors
5%
Voltage Potential
5%
Silicon Carbide
5%
Power Handling Capability
5%
Medium-voltage Power Module
5%
Silicon Carbide (SiC) MOSFET
5%
Base Plate
5%
Inductors
5%
Auxiliary Power Supply
5%
Miller Clamp
5%
