Engineering
Parasitic Capacitance
100%
Metal-Oxide-Semiconductor Field-Effect Transistor
59%
Power Supply
47%
Common Mode
34%
DC-to-DC Converter
23%
Magnetic Core
17%
Power Density
14%
Electric Field
14%
Gate Voltage
14%
Experimental Result
14%
Conductive
13%
Series Connection
12%
Limitations
12%
Coupling Capacitance
11%
Output Voltage
11%
Directional
11%
Battery Energy Storage
11%
Self-Powered
11%
Nitride
11%
Measurement Process
11%
Printed Circuit Board
11%
Light Load
11%
Domain Analysis
11%
Time Domain
11%
Design Guideline
11%
Analytical Model
11%
Crosstalk
11%
Current Sensor
11%
Power Device
11%
Dielectric Strength
11%
Power Loss
11%
Pulse Test
9%
Power Electronic Converter
9%
Finite Element Method
8%
Mitigation Strategy
8%
Current Transformer
8%
Simulation Result
8%
Electric Field
8%
Capacitive
7%
Voltage Drop
7%
Leakage Inductance
7%
Resonant Frequency
7%
Magnetic Couplings
5%
Frequency Characteristic
5%
Field Distribution
5%
Measured Result
5%
Electromagnetic Analysis
5%
Parallel Connection
5%
Secondary Voltage
5%
Finite Element Analysis
5%
Material Science
Capacitance
65%
Finite Element Methods
26%
Magnetic Core
20%
Density
14%
Electronic Circuit
11%
Metal-Oxide-Semiconductor Field-Effect Transistor
11%
Gallium Nitride
11%
Ceramic Material
11%
Aluminum Oxide
5%
Silicon Nitride
5%
Silicon Carbide
5%
Dielectric Material
5%
Thermal Conductivity
5%
Conductor
5%
Aluminum Nitride
5%
Keyphrases
Gate Driver Power Supply
11%
Parallel Windings
11%
Isolated DC-DC Converter
11%
Gallium Nitride
11%
High Power Density
11%
Planar Winding
11%
Trade-off Design
11%
Magnetic Components
11%
Planar Inductor
11%
Winding Resistance
7%
Winding Loss
7%
Parasitic Capacitance
7%
Crosstalk Current
7%
Winding Pattern
5%
