Engineering
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Power Converter
70%
Semiconductor Device
46%
Electrolyser
40%
Electrolyzer
40%
Power Electronic Converter
38%
Dead Time
27%
Closed Loop
24%
Power Electronics
20%
Current Sensor
20%
Noise Analysis
20%
High Power Electronics
20%
Wide Bandgap Semiconductor
19%
Applicability
18%
Switching Event
14%
Nonlinearity
14%
Experimental Result
13%
Capacitive Coupling
12%
Analytical Model
12%
Power Grid
10%
System Efficiency
10%
Capital Cost
10%
Green Hydrogen
10%
Hydrogen Production
10%
Sustainable Energy
10%
Electrolysis Technology
10%
Electrical Power
10%
Noise Level
10%
Dynamic Performance
10%
Electricity Demand
10%
Comprehensive Review
10%
Switching Speed
9%
Secondary Winding
8%
Parasitic Capacitance
8%
Error Voltage
6%
Digital Controller
5%
Reference Frame
5%
Auxiliary Equipment
5%
Tasks
5%
Keyphrases
Electrolyser
40%
Electrolysis
40%
Volt-second
40%
Power Converter
30%
10 kV SiC MOSFET
20%
Power Electronics
20%
Two-layer Medium
20%
Analytical Model
20%
SiC MOSFET Module
20%
Medium Voltage
20%
High Power Electronics
20%
Nonlinearity
18%
Silicon Carbide (SiC) MOSFET
18%
Power Module
18%
Switching Events
13%
MOSFET
13%
Wide-bandgap Semiconductor Devices
11%
Cost of Capital
10%
System Efficiency
10%
Electrical Energy
10%
Clean Electricity
10%
Efficiency Improvement
10%
Power Grid
10%
Sustainable Energy
10%
Grid Services
10%
Global Transition
10%
Net-zero Emissions
10%
Medium Voltage Converter
10%
Electrolysis Technology
10%
Plant Size
10%
Sustainable Hydrogen Production
10%
Improved System
10%
Green Hydrogen
10%
Critical Enablers
10%
Capital Expenditure (CAPEX)
10%
Analytical Derivation
6%
Transient Behavior
6%
Gate Driving
6%
Switching Speed
6%
Switching Frequency
6%
Individual Contribution
6%
Circuitry
6%
Parasitic Capacitance
6%
Motor Applications
6%
Emerging Media
6%
Relative Impact
6%
First-order
6%
High Efficiency
5%
Voltage Level
5%
Voltage Slew Rate
5%
Voltage Error
5%
Switching Event
5%
Double Pulse Test
5%
Service Power
5%
High Efficiency
5%