The aim of this research project is to establish a new reliability design method for SiC modules using 3D simulation. Power semiconductors, which perform the power conversion of electrical equipment, are expected to improve their performance as a core component of energy-saving technology. In particular, SiC-based power semiconductors are expected to significantly improve performance (high efficiency, high breakdown voltage) due to their theoretical properties (high thermal conductivity, high breakdown voltage), and are attracting attention as an alternative to Si-based power semiconductors, which have been the mainstream energy-saving technology. In this study, I will establish a new product design methodology for "power modules", which consist of multiple SiC power semiconductors in a single package. In the design of power modules, it is necessary to design the product with high accuracy and in a short time. Conventional design methods involve theoretical considerations, followed by the production and evaluation of samples, and then repeated prototyping and evaluation until the target specifications are achieved. In particular, the reliability evaluation of a product can take many months per test, and reducing the number of such tests can significantly reduce the lead time for product design. Therefore, this research proposes a new design method, "Module Structure Optimization by Digital Design", which can significantly reduce the design lead time in the reliability design of power modules. In order to achieve this, it is necessary to improve the accuracy of the simulation. Since there is currently no physical model that can evaluate and predict the reliability of SiC modules by simulation, the following steps are taken in this study:
1. To identify the physical parameters that are correlated with some characteristics that determine the reliability of the module, and to develop a model that can predict the reliability from the physical parameters of the module.
2. Make a 3D model of the module by simulation using the physical model in 1, and predict the reliability of the module.
3. Feedback the reliability results obtained in 2, design the optimum module to improve the reliability on the 3D model, fabricate the actual module and confirm its reliability characteristics.
By establishing the above method, SiC power modules can be designed in a short time, at low cost and with high quality.

Funding: Center of Digitalized Electronics (CoDE)

Effektiv start/slut dato01/10/202130/09/2024


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