Projektdetaljer
Beskrivelse
Abstract:
Nowadays, the GaN technology has helped improved the power density and efficiency of the converters. Many kinds of GaN devices has been developed, of which cascode device is the easiest to use and fabricate. Compared to the traditional p-GaN devices, cascode device has a similar package of Si counterparts and its driving requirement is the same as Si devices, making it easier to be used in power converters. However, its reliability performance need to be further explored to ensure the safe operation. The reliability of the device under SC and power cycling will be further explored in this project.
Funding: Self-funded
Nowadays, the GaN technology has helped improved the power density and efficiency of the converters. Many kinds of GaN devices has been developed, of which cascode device is the easiest to use and fabricate. Compared to the traditional p-GaN devices, cascode device has a similar package of Si counterparts and its driving requirement is the same as Si devices, making it easier to be used in power converters. However, its reliability performance need to be further explored to ensure the safe operation. The reliability of the device under SC and power cycling will be further explored in this project.
Funding: Self-funded
| Status | Igangværende |
|---|---|
| Effektiv start/slut dato | 01/02/2021 → 31/01/2024 |
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