Projektdetaljer
Beskrivelse
Abstract:
Power semiconductor devices can distribute and process electrical energy quickly and efficiently in the entire power electronics application or energy conversion field, so they are generally considered to be the most important components in the above-mentioned fields [1].Especially it is widely used in renewable energy power generation, electric vehicles, aerospace and other fields [2]. However, the key components of the entire power electronic system or component that need to work for a long time are faced with thermomechanical stress, overcurrent, wear-out, erosion, cosmic and other factors to enter the aging and degradation stage, which affects its reliability and lifetime [3], [4].
Engineering practice shows that slow electro-migration and material Coefficient of Thermal Expansion (CTE) mismatch caused by thermal stress can easily cause power semiconductor devices to failure and fault. Therefore, it is necessary to configure the load or environmental tasks under specific experimental conditions to accelerate and shorten this aging and degradation process.
The focus of this project is to achieve efficient and accurate accelerated reliability testing of power semiconductor devices. It aims to overcome basic obstacles by adopting new methods through advanced accelerated power cycle testing strategies, accurate model establishment (power loss model, thermal model, lifetime model), reliability evaluation, and cost-effective method for evaluating junction temperature of Temperature Sensitive Electrical Parameters (TSEPs) [3], [5]. Specifically, as shown in Fig. 1, a thermal model considering the efficiency and accuracy of junction temperature extraction will be developed to predict the thermal behavior inside the power semiconductor module. Therefore, the accelerated aging method based on the mission profiles can be used to evaluate the reliability and life under realistic stress conditions. Then, a control method under active power cycling and high thermal stress conditions will be developed to meet harsh accelerated stress requirements. In order to further improve the accuracy of the established model, the mechanism characterization of electrothermal and thermomechanical models will be studied in depth. At the same time, in order to improve efficiency and reduce costs, the selected electrothermal sensitive parameters will be tested online, so as to quickly and accurately obtain a large amount of effective experimental data.
Funding: Self-funded
Power semiconductor devices can distribute and process electrical energy quickly and efficiently in the entire power electronics application or energy conversion field, so they are generally considered to be the most important components in the above-mentioned fields [1].Especially it is widely used in renewable energy power generation, electric vehicles, aerospace and other fields [2]. However, the key components of the entire power electronic system or component that need to work for a long time are faced with thermomechanical stress, overcurrent, wear-out, erosion, cosmic and other factors to enter the aging and degradation stage, which affects its reliability and lifetime [3], [4].
Engineering practice shows that slow electro-migration and material Coefficient of Thermal Expansion (CTE) mismatch caused by thermal stress can easily cause power semiconductor devices to failure and fault. Therefore, it is necessary to configure the load or environmental tasks under specific experimental conditions to accelerate and shorten this aging and degradation process.
The focus of this project is to achieve efficient and accurate accelerated reliability testing of power semiconductor devices. It aims to overcome basic obstacles by adopting new methods through advanced accelerated power cycle testing strategies, accurate model establishment (power loss model, thermal model, lifetime model), reliability evaluation, and cost-effective method for evaluating junction temperature of Temperature Sensitive Electrical Parameters (TSEPs) [3], [5]. Specifically, as shown in Fig. 1, a thermal model considering the efficiency and accuracy of junction temperature extraction will be developed to predict the thermal behavior inside the power semiconductor module. Therefore, the accelerated aging method based on the mission profiles can be used to evaluate the reliability and life under realistic stress conditions. Then, a control method under active power cycling and high thermal stress conditions will be developed to meet harsh accelerated stress requirements. In order to further improve the accuracy of the established model, the mechanism characterization of electrothermal and thermomechanical models will be studied in depth. At the same time, in order to improve efficiency and reduce costs, the selected electrothermal sensitive parameters will be tested online, so as to quickly and accurately obtain a large amount of effective experimental data.
Funding: Self-funded
| Status | Igangværende |
|---|---|
| Effektiv start/slut dato | 01/06/2021 → 31/05/2024 |
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