Semiconductor materials for power electronics

Beskrivelse

The project will develop new Si/GaN materials with highly advanced and well-controlled functionalization with respect to doping, defects, and their spatial profiles. Components fabricated on optimized Si/GaN wafers will be tested in the international consortium behind the project

Nøgleresultater

GaN HEMT; reliability
Kort titelSEMPEL
StatusIgangværende
Effektiv start/slut dato01/04/201531/12/2019