SiC Medium Voltage Power Module Simulation, Design, and Manufacture

Abstract:
This Ph.D. will explore the implementation of medium voltage SiC components in power modules. Firstly, a medium voltage multi-chip power module will be simulated, designed, and manufactured based on a WBG transistor SiC metal-oxide-semiconductor field-effect transistor (MOSFET) with a 10 kV breakdown voltage. This power module will be designed with a focus on using a virtual design process by creating a virtual prototype, which is used to extract electric characteristics information and thermal performance of the power module prior to building a physical prototype, illustrating the usefulness of this design process.

Funding:
APETT, MV-BASIC