Projektdetaljer

Beskrivelse

The float zone (FZ) crystal growth technique is utilized for the production of ultra-pure silicon, which is used primarily for power electronic components and high efficiency photovoltaics in the energy sector. The FZ technique utilizes high frequency and high power inductive heating, an area where vacuum-tube based RF generators are currently dominant on the market.

This project aims to investigate the opportunity to replace the low-efficiency vacuum-tube RF generators with solid-state RF generators. These will improve the energy efficiency of the FZ process, provide increased performance stability, and allow for better process control.

Collaborator: Topsil GlobalWafers A/S.
Funding: Innovation Fund Denmark.
StatusAfsluttet
Effektiv start/slut dato01/01/201831/03/2021

Fingerprint

Udforsk forskningsemnerne, som dette projekt berører. Disse etiketter er oprettet på grundlag af de underliggende bevillinger/legater. Sammen danner de et unikt fingerprint.