10kV SiC MOSFET split output power module

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2 Citationer (Scopus)

Resumé

The poor body diode performance of the first generation of 10kV SiC MOSFETs and the parasitic turn-on phenomenon limit the performance of SiC based converters. Both these problems can potentially be mitigated using a split output topology. In this paper we present a comparison between a classical half bridge and a split-output power module. It is found that the peak current during turn-on is reduced significantly, however some additional challenges arise during implementation.
OriginalsprogEngelsk
TitelProceedings of the 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe)
Antal sider7
ForlagIEEE Press
Publikationsdatosep. 2015
Sider1-7
DOI
StatusUdgivet - sep. 2015
Begivenhed17th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2015 - Centre International de Conférence Genève (CICG), 17 rue Varembé CH . 1211 Genève 20, Geneva, Schweiz
Varighed: 8 sep. 201510 sep. 2015

Konference

Konference17th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2015
LokationCentre International de Conférence Genève (CICG), 17 rue Varembé CH . 1211 Genève 20
LandSchweiz
ByGeneva
Periode08/09/201510/09/2015

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Beczkowski, S., Li, H., Uhrenfeldt, C., Eni, E-P., & Munk-Nielsen, S. (2015). 10kV SiC MOSFET split output power module. I Proceedings of the 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe) (s. 1-7 ). IEEE Press. https://doi.org/10.1109/EPE.2015.7309450
Beczkowski, Szymon ; Li, Helong ; Uhrenfeldt, Christian ; Eni, Emanuel-Petre ; Munk-Nielsen, Stig. / 10kV SiC MOSFET split output power module. Proceedings of the 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe). IEEE Press, 2015. s. 1-7
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title = "10kV SiC MOSFET split output power module",
abstract = "The poor body diode performance of the first generation of 10kV SiC MOSFETs and the parasitic turn-on phenomenon limit the performance of SiC based converters. Both these problems can potentially be mitigated using a split output topology. In this paper we present a comparison between a classical half bridge and a split-output power module. It is found that the peak current during turn-on is reduced significantly, however some additional challenges arise during implementation.",
keywords = "power MOSFET, Silicon compounds, Wide band gap semiconductors, MOSFET split output power module, Parasitic turn-on phenomenon, Peak current, Poor body diode performance, Voltage 10 kV",
author = "Szymon Beczkowski and Helong Li and Christian Uhrenfeldt and Emanuel-Petre Eni and Stig Munk-Nielsen",
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Beczkowski, S, Li, H, Uhrenfeldt, C, Eni, E-P & Munk-Nielsen, S 2015, 10kV SiC MOSFET split output power module. i Proceedings of the 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe). IEEE Press, s. 1-7 , 17th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2015, Geneva, Schweiz, 08/09/2015. https://doi.org/10.1109/EPE.2015.7309450

10kV SiC MOSFET split output power module. / Beczkowski, Szymon; Li, Helong; Uhrenfeldt, Christian; Eni, Emanuel-Petre; Munk-Nielsen, Stig.

Proceedings of the 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe). IEEE Press, 2015. s. 1-7 .

Publikation: Bidrag til bog/antologi/rapport/konference proceedingKonferenceartikel i proceedingForskningpeer review

TY - GEN

T1 - 10kV SiC MOSFET split output power module

AU - Beczkowski, Szymon

AU - Li, Helong

AU - Uhrenfeldt, Christian

AU - Eni, Emanuel-Petre

AU - Munk-Nielsen, Stig

PY - 2015/9

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N2 - The poor body diode performance of the first generation of 10kV SiC MOSFETs and the parasitic turn-on phenomenon limit the performance of SiC based converters. Both these problems can potentially be mitigated using a split output topology. In this paper we present a comparison between a classical half bridge and a split-output power module. It is found that the peak current during turn-on is reduced significantly, however some additional challenges arise during implementation.

AB - The poor body diode performance of the first generation of 10kV SiC MOSFETs and the parasitic turn-on phenomenon limit the performance of SiC based converters. Both these problems can potentially be mitigated using a split output topology. In this paper we present a comparison between a classical half bridge and a split-output power module. It is found that the peak current during turn-on is reduced significantly, however some additional challenges arise during implementation.

KW - power MOSFET

KW - Silicon compounds

KW - Wide band gap semiconductors

KW - MOSFET split output power module

KW - Parasitic turn-on phenomenon

KW - Peak current

KW - Poor body diode performance

KW - Voltage 10 kV

U2 - 10.1109/EPE.2015.7309450

DO - 10.1109/EPE.2015.7309450

M3 - Article in proceeding

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BT - Proceedings of the 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe)

PB - IEEE Press

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Beczkowski S, Li H, Uhrenfeldt C, Eni E-P, Munk-Nielsen S. 10kV SiC MOSFET split output power module. I Proceedings of the 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe). IEEE Press. 2015. s. 1-7 https://doi.org/10.1109/EPE.2015.7309450