10kV SiC MOSFET split output power module

Publikation: Bidrag til bog/antologi/rapport/konference proceedingKonferenceartikel i proceedingForskningpeer review

2 Citationer (Scopus)

Abstrakt

The poor body diode performance of the first generation of 10kV SiC MOSFETs and the parasitic turn-on phenomenon limit the performance of SiC based converters. Both these problems can potentially be mitigated using a split output topology. In this paper we present a comparison between a classical half bridge and a split-output power module. It is found that the peak current during turn-on is reduced significantly, however some additional challenges arise during implementation.
OriginalsprogEngelsk
TitelProceedings of the 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe)
Antal sider7
ForlagIEEE Press
Publikationsdatosep. 2015
Sider1-7
DOI
StatusUdgivet - sep. 2015
Begivenhed17th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2015 - Centre International de Conférence Genève (CICG), 17 rue Varembé CH . 1211 Genève 20, Geneva, Schweiz
Varighed: 8 sep. 201510 sep. 2015

Konference

Konference17th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2015
LokationCentre International de Conférence Genève (CICG), 17 rue Varembé CH . 1211 Genève 20
LandSchweiz
ByGeneva
Periode08/09/201510/09/2015

Fingeraftryk Dyk ned i forskningsemnerne om '10kV SiC MOSFET split output power module'. Sammen danner de et unikt fingeraftryk.

  • Citationsformater

    Beczkowski, S., Li, H., Uhrenfeldt, C., Eni, E-P., & Munk-Nielsen, S. (2015). 10kV SiC MOSFET split output power module. I Proceedings of the 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe) (s. 1-7 ). IEEE Press. https://doi.org/10.1109/EPE.2015.7309450