A 0.25μm CMOS low power RF multiplier for ultra-wide band system applications

Tian Tong; Chih An Lin; Ole Kiel Jensen; Jan H. Mikkelsen; Torben Larsen

doi:10.1109/EDSSC.2005.1635246

A 0.25μm CMOS low power RF multiplier for ultra-wide band system applications

Tian Tong^*, Chih An Lin, Ole Kiel Jensen, Jan H. Mikkelsen, Torben Larsen

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Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

5 Citationer (Scopus)

Abstrakt

A low power RF multiplier with ultra-wide signal response band is presented for ultra-wide band system applications such as an UWB demodulator (FM-UWB) or RF-correlator (impulse-radio). The principle of operation and the bandwidth theory is presented and discussed. The practical circuit is implemented using a 0.25μm CMOS process from UMC. The test results show an average gain of 22.5dBV^-1 at 1.2 GHz and 20.8dBV ' at 3 GHz. Across a full band-width of more than 700 MHz the design provides high in-band gain flatness. The circuit consumes a total of 1.3 mA from a 2.5V supply. The total circuit area is 200μm×300μm.

Originalsprog	Engelsk
Titel	2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Antal sider	4
Forlag	IEEE Signal Processing Society
Publikationsdato	2005
Sider	221-224
Artikelnummer	1635246
ISBN (Trykt)	0-7803-9339-2, 9780780393394
DOI	https://doi.org/10.1109/EDSSC.2005.1635246
Status	Udgivet - 2005
Begivenhed	2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC - Howloon, Hong Kong Varighed: 19 dec. 2005 → 21 dec. 2005

Konference

Konference	2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Land/Område	Hong Kong
By	Howloon
Periode	19/12/2005 → 21/12/2005
Sponsor	IEEE Electron Devices Society, IEEE Hong Kong Section, IEEE Solid-State Circuits Society, K. C. Wong Education Foundation, Solomon Systech Limited

Navn	2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

Bibliografisk note

Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.

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10.1109/EDSSC.2005.1635246

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Citationsformater

Tong, T., Lin, C. A., Jensen, O. K., Mikkelsen, J. H., & Larsen, T. (2005). A 0.25μm CMOS low power RF multiplier for ultra-wide band system applications. I 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC (s. 221-224). [1635246] IEEE Signal Processing Society. 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC https://doi.org/10.1109/EDSSC.2005.1635246

@inproceedings{4075cb9c1fbd47b6b026203b59b80891,

title = "A 0.25μm CMOS low power RF multiplier for ultra-wide band system applications",

abstract = "A low power RF multiplier with ultra-wide signal response band is presented for ultra-wide band system applications such as an UWB demodulator (FM-UWB) or RF-correlator (impulse-radio). The principle of operation and the bandwidth theory is presented and discussed. The practical circuit is implemented using a 0.25μm CMOS process from UMC. The test results show an average gain of 22.5dBV-1 at 1.2 GHz and 20.8dBV ' at 3 GHz. Across a full band-width of more than 700 MHz the design provides high in-band gain flatness. The circuit consumes a total of 1.3 mA from a 2.5V supply. The total circuit area is 200μm×300μm.",

author = "Tian Tong and Lin, {Chih An} and Jensen, {Ole Kiel} and Mikkelsen, {Jan H.} and Torben Larsen",

year = "2005",

doi = "10.1109/EDSSC.2005.1635246",

language = "English",

isbn = "0-7803-9339-2",

series = "2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC",

pages = "221--224",

booktitle = "2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC",

publisher = "IEEE Signal Processing Society",

address = "United States",

}

Tong, T, Lin, CA, Jensen, OK , Mikkelsen, JH & Larsen, T 2005, A 0.25μm CMOS low power RF multiplier for ultra-wide band system applications. i 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC., 1635246, IEEE Signal Processing Society, 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC, s. 221-224, 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC, Howloon, Hong Kong, 19/12/2005. https://doi.org/10.1109/EDSSC.2005.1635246

A 0.25μm CMOS low power RF multiplier for ultra-wide band system applications. / Tong, Tian; Lin, Chih An; Jensen, Ole Kiel et al.

2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC. IEEE Signal Processing Society, 2005. s. 221-224 1635246 (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC).

Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

TY - GEN

T1 - A 0.25μm CMOS low power RF multiplier for ultra-wide band system applications

AU - Tong, Tian

AU - Lin, Chih An

AU - Jensen, Ole Kiel

AU - Mikkelsen, Jan H.

AU - Larsen, Torben

PY - 2005

Y1 - 2005

N2 - A low power RF multiplier with ultra-wide signal response band is presented for ultra-wide band system applications such as an UWB demodulator (FM-UWB) or RF-correlator (impulse-radio). The principle of operation and the bandwidth theory is presented and discussed. The practical circuit is implemented using a 0.25μm CMOS process from UMC. The test results show an average gain of 22.5dBV-1 at 1.2 GHz and 20.8dBV ' at 3 GHz. Across a full band-width of more than 700 MHz the design provides high in-band gain flatness. The circuit consumes a total of 1.3 mA from a 2.5V supply. The total circuit area is 200μm×300μm.

AB - A low power RF multiplier with ultra-wide signal response band is presented for ultra-wide band system applications such as an UWB demodulator (FM-UWB) or RF-correlator (impulse-radio). The principle of operation and the bandwidth theory is presented and discussed. The practical circuit is implemented using a 0.25μm CMOS process from UMC. The test results show an average gain of 22.5dBV-1 at 1.2 GHz and 20.8dBV ' at 3 GHz. Across a full band-width of more than 700 MHz the design provides high in-band gain flatness. The circuit consumes a total of 1.3 mA from a 2.5V supply. The total circuit area is 200μm×300μm.

UR - http://www.scopus.com/inward/record.url?scp=43549127071&partnerID=8YFLogxK

U2 - 10.1109/EDSSC.2005.1635246

DO - 10.1109/EDSSC.2005.1635246

M3 - Article in proceeding

AN - SCOPUS:43549127071

SN - 0-7803-9339-2

SN - 9780780393394

T3 - 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

SP - 221

EP - 224

BT - 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

PB - IEEE Signal Processing Society

T2 - 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

Y2 - 19 December 2005 through 21 December 2005

ER -

Tong T, Lin CA, Jensen OK , Mikkelsen JH , Larsen T. A 0.25μm CMOS low power RF multiplier for ultra-wide band system applications. I 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC. IEEE Signal Processing Society. 2005. s. 221-224. 1635246. (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC). doi: 10.1109/EDSSC.2005.1635246

A 0.25μm CMOS low power RF multiplier for ultra-wide band system applications

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