A 3-D simulation study about Single Event Gate damage in medium voltage power MOSFET

A. Porzio*, F. Velardi, G. Busatto, F. Iannuzzo, A. Sanseverino, G. Currò

*Kontaktforfatter

Publikation: Bidrag til bog/antologi/rapport/konference proceedingKonferenceartikel i proceedingForskningpeer review

6 Citationer (Scopus)

Abstrakt

In this paper we present a 3-D simulation study, based on experimental observation, which describes the role played by the strong increase of the electric field in the occurrence of gate damages induced by an heavy ion impact on typical medium power MOSFET devices.
OriginalsprogEngelsk
Titel2008 European Conference on Radiation and Its Effects on Components and Systems, RADECS 2008
Antal sider4
Publikationsdato1 dec. 2008
Sider209-212
Artikelnummer5782713
ISBN (Trykt)9781457704819
DOI
StatusUdgivet - 1 dec. 2008
Udgivet eksterntJa
Begivenhed8th European Workshop on Radiation and Its Effects on Components and Systems, RADECS 2008 - Jyvaskyla, Finland
Varighed: 10 sep. 200812 sep. 2008

Konference

Konference8th European Workshop on Radiation and Its Effects on Components and Systems, RADECS 2008
LandFinland
ByJyvaskyla
Periode10/09/200812/09/2008
SponsorThe University of Jyvaskyla together with ESA, City of Jyvaskyla, Academy of Finland, Finnish Technology Agency, Finnish Nanotechnology Cluster Programme

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  • Citationsformater

    Porzio, A., Velardi, F., Busatto, G., Iannuzzo, F., Sanseverino, A., & Currò, G. (2008). A 3-D simulation study about Single Event Gate damage in medium voltage power MOSFET. I 2008 European Conference on Radiation and Its Effects on Components and Systems, RADECS 2008 (s. 209-212). [5782713] https://doi.org/10.1109/RADECS.2008.5782713