A 3D Lumped Thermal Network Model for Long-term Load Profiles Analysis in High Power IGBT Modules

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Resumé

The conventional RC lumped thermal networks are widely used to estimate the temperature of power devices, but they are lack of accuracy in addressing detailed thermal behaviors/couplings in different locations and layers of the high power IGBT modules. On the other hand, Finite Element (FE)-based simulation is another method which is often used to analyze the steady-state thermal distribution of IGBT modules, but it is not possible to be used for long-term analysis of load profiles of power converter, which is needed for reliability assessments and better thermal design. This paper proposes a novel three-dimensional RC lumped thermal network for the high power IGBT modules. The thermal-coupling effects among the chips and among the critical layers are modelled, and boundary conditions including the cooling conditions are also taken into account. It is concluded that, the proposed thermal model enables both accurate and fast temperature estimation of high power IGBT modules in the real loading conditions of the converter; meanwhile the critical details of the thermal dynamics and thermal distribution are also maintained. The proposed thermal model is verified by both FEM simulation and experimental results.
OriginalsprogEngelsk
TidsskriftI E E E Journal of Emerging and Selected Topics in Power Electronics
Vol/bind4
Udgave nummer3
Sider (fra-til)1050 - 1063
Antal sider14
ISSN2168-6777
DOI
StatusUdgivet - sep. 2016

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Insulated gate bipolar transistors (IGBT)
Hot Temperature
Power converters
Boundary conditions
Cooling
Finite element method
Temperature

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title = "A 3D Lumped Thermal Network Model for Long-term Load Profiles Analysis in High Power IGBT Modules",
abstract = "The conventional RC lumped thermal networks are widely used to estimate the temperature of power devices, but they are lack of accuracy in addressing detailed thermal behaviors/couplings in different locations and layers of the high power IGBT modules. On the other hand, Finite Element (FE)-based simulation is another method which is often used to analyze the steady-state thermal distribution of IGBT modules, but it is not possible to be used for long-term analysis of load profiles of power converter, which is needed for reliability assessments and better thermal design. This paper proposes a novel three-dimensional RC lumped thermal network for the high power IGBT modules. The thermal-coupling effects among the chips and among the critical layers are modelled, and boundary conditions including the cooling conditions are also taken into account. It is concluded that, the proposed thermal model enables both accurate and fast temperature estimation of high power IGBT modules in the real loading conditions of the converter; meanwhile the critical details of the thermal dynamics and thermal distribution are also maintained. The proposed thermal model is verified by both FEM simulation and experimental results.",
keywords = "Finite element method (FEM), Insulated gate bipolar transistor (IGBT), Mission profile, Power semiconductor, Reliability, Thermal model",
author = "Bahman, {Amir Sajjad} and Ke Ma and Pramod Ghimire and Francesco Iannuzzo and Frede Blaabjerg",
year = "2016",
month = "9",
doi = "10.1109/JESTPE.2016.2531631",
language = "English",
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pages = "1050 -- 1063",
journal = "I E E E Journal of Emerging and Selected Topics in Power Electronics",
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A 3D Lumped Thermal Network Model for Long-term Load Profiles Analysis in High Power IGBT Modules. / Bahman, Amir Sajjad; Ma, Ke; Ghimire, Pramod; Iannuzzo, Francesco; Blaabjerg, Frede.

I: I E E E Journal of Emerging and Selected Topics in Power Electronics, Bind 4, Nr. 3, 09.2016, s. 1050 - 1063.

Publikation: Bidrag til tidsskriftTidsskriftartikelForskningpeer review

TY - JOUR

T1 - A 3D Lumped Thermal Network Model for Long-term Load Profiles Analysis in High Power IGBT Modules

AU - Bahman, Amir Sajjad

AU - Ma, Ke

AU - Ghimire, Pramod

AU - Iannuzzo, Francesco

AU - Blaabjerg, Frede

PY - 2016/9

Y1 - 2016/9

N2 - The conventional RC lumped thermal networks are widely used to estimate the temperature of power devices, but they are lack of accuracy in addressing detailed thermal behaviors/couplings in different locations and layers of the high power IGBT modules. On the other hand, Finite Element (FE)-based simulation is another method which is often used to analyze the steady-state thermal distribution of IGBT modules, but it is not possible to be used for long-term analysis of load profiles of power converter, which is needed for reliability assessments and better thermal design. This paper proposes a novel three-dimensional RC lumped thermal network for the high power IGBT modules. The thermal-coupling effects among the chips and among the critical layers are modelled, and boundary conditions including the cooling conditions are also taken into account. It is concluded that, the proposed thermal model enables both accurate and fast temperature estimation of high power IGBT modules in the real loading conditions of the converter; meanwhile the critical details of the thermal dynamics and thermal distribution are also maintained. The proposed thermal model is verified by both FEM simulation and experimental results.

AB - The conventional RC lumped thermal networks are widely used to estimate the temperature of power devices, but they are lack of accuracy in addressing detailed thermal behaviors/couplings in different locations and layers of the high power IGBT modules. On the other hand, Finite Element (FE)-based simulation is another method which is often used to analyze the steady-state thermal distribution of IGBT modules, but it is not possible to be used for long-term analysis of load profiles of power converter, which is needed for reliability assessments and better thermal design. This paper proposes a novel three-dimensional RC lumped thermal network for the high power IGBT modules. The thermal-coupling effects among the chips and among the critical layers are modelled, and boundary conditions including the cooling conditions are also taken into account. It is concluded that, the proposed thermal model enables both accurate and fast temperature estimation of high power IGBT modules in the real loading conditions of the converter; meanwhile the critical details of the thermal dynamics and thermal distribution are also maintained. The proposed thermal model is verified by both FEM simulation and experimental results.

KW - Finite element method (FEM)

KW - Insulated gate bipolar transistor (IGBT)

KW - Mission profile

KW - Power semiconductor

KW - Reliability

KW - Thermal model

U2 - 10.1109/JESTPE.2016.2531631

DO - 10.1109/JESTPE.2016.2531631

M3 - Journal article

VL - 4

SP - 1050

EP - 1063

JO - I E E E Journal of Emerging and Selected Topics in Power Electronics

JF - I E E E Journal of Emerging and Selected Topics in Power Electronics

SN - 2168-6777

IS - 3

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