A Compact P⁺ Contact Resistance Model for Characterization of Substrate Coupling in Modern Lightly Doped CMOS Processes

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Abstrakt

Compact modeling of P+ contact resistances is
important for characterization of substrate noise coupling in
mixed-signal System on Chips (SoCs). Existing contact resistance
models can handle uniformly doped bulk or epitaxial substrates.
However, compact contact resistance models feasible for modern
lightly-doped CMOS processes with P-well layers are still unavailable.
This paper presents a new compact resistance model aiming
at solving this problem. A Conformal Mapping(CM) method was
used to derive the closed-form expressions for the resistances in
the model. The model requires no fitting factors, and it is scalable
to layout/substrate parameters. The proposed model can also be
used to predict noise coupling in terms of S-parameters. The
model validation has been done by both EM simulations and
measurements, and satisfactory agreement is found between the
modeled and measured resistances as well as S-parameters.
OriginalsprogEngelsk
TitelEuropean Microwave Week 2012 Conference Proceedings
ForlagEuMA
Publikationsdato2012
ISBN (Elektronisk)978-2-87487-028-6
StatusUdgivet - 2012
BegivenhedEuropean Microwave Integrated Circuits Conference 2012 - Amsterdam, Holland
Varighed: 29 okt. 201230 okt. 2012

Konference

KonferenceEuropean Microwave Integrated Circuits Conference 2012
Land/OmrådeHolland
ByAmsterdam
Periode29/10/201230/10/2012

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