A Comprehensive Investigation on the Short Circuit Performance of MW-level IGBT Power Modules

Rui Wu; Paula Diaz Reigosa; Francesco Iannuzzo; Huai Wang; Frede Blaabjerg

doi:10.1109/EPE.2015.7311761

A Comprehensive Investigation on the Short Circuit Performance of MW-level IGBT Power Modules

Rui Wu, Paula Diaz Reigosa, Francesco Iannuzzo, Huai Wang, Frede Blaabjerg

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Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

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Abstract

This paper investigates the short circuit performance of commercial 1.7 kV / 1 kA IGBT power modules by means of a 6 kA Non-Destructive-Tester. A mismatched current distribution among the parallel chips has been observed, which can reduce the short circuit capability of the IGBT power module under short circuit conditions. Further Spice simulations reveal that the stray parameters inside the module play an important role in contributing to such a phenomenon.

Originalsprog	Engelsk
Titel	Proceedings of the 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe)
Antal sider	9
Forlag	IEEE Press
Publikationsdato	sep. 2015
Sider	1-9
DOI	https://doi.org/10.1109/EPE.2015.7311761
Status	Udgivet - sep. 2015
Begivenhed	17th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2015 - Centre International de Conférence Genève (CICG), 17 rue Varembé CH . 1211 Genève 20, Geneva, Schweiz Varighed: 8 sep. 2015 → 10 sep. 2015

Konference

Konference	17th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2015
Lokation	Centre International de Conférence Genève (CICG), 17 rue Varembé CH . 1211 Genève 20
Land/Område	Schweiz
By	Geneva
Periode	08/09/2015 → 10/09/2015

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Citationsformater

@inproceedings{c1bfd27dcc344e28ac3a902034a7201c,

title = "A Comprehensive Investigation on the Short Circuit Performance of MW-level IGBT Power Modules",

abstract = "This paper investigates the short circuit performance of commercial 1.7 kV / 1 kA IGBT power modules by means of a 6 kA Non-Destructive-Tester. A mismatched current distribution among the parallel chips has been observed, which can reduce the short circuit capability of the IGBT power module under short circuit conditions. Further Spice simulations reveal that the stray parameters inside the module play an important role in contributing to such a phenomenon.",

keywords = "Insulated-Gate Bipolar Transistor (IGBT), Power Modules, Short Circuit, Current Distribution",

author = "Rui Wu and Reigosa, {Paula Diaz} and Francesco Iannuzzo and Huai Wang and Frede Blaabjerg",

year = "2015",

month = sep,

doi = "10.1109/EPE.2015.7311761",

language = "English",

pages = "1--9",

booktitle = "Proceedings of the 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe)",

publisher = "IEEE Press",

note = "17th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2015, IEEE ECCE-EPE 2015 ; Conference date: 08-09-2015 Through 10-09-2015",

}

Wu, R, Reigosa, PD, Iannuzzo, F , Wang, H & Blaabjerg, F 2015, A Comprehensive Investigation on the Short Circuit Performance of MW-level IGBT Power Modules. i Proceedings of the 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe). IEEE Press, s. 1-9, 17th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2015, Geneva, Schweiz, 08/09/2015. https://doi.org/10.1109/EPE.2015.7311761

A Comprehensive Investigation on the Short Circuit Performance of MW-level IGBT Power Modules. / Wu, Rui; Reigosa, Paula Diaz; Iannuzzo, Francesco et al.
Proceedings of the 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe). IEEE Press, 2015. s. 1-9.

Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

TY - GEN

T1 - A Comprehensive Investigation on the Short Circuit Performance of MW-level IGBT Power Modules

AU - Wu, Rui

AU - Reigosa, Paula Diaz

AU - Iannuzzo, Francesco

AU - Wang, Huai

AU - Blaabjerg, Frede

PY - 2015/9

Y1 - 2015/9

N2 - This paper investigates the short circuit performance of commercial 1.7 kV / 1 kA IGBT power modules by means of a 6 kA Non-Destructive-Tester. A mismatched current distribution among the parallel chips has been observed, which can reduce the short circuit capability of the IGBT power module under short circuit conditions. Further Spice simulations reveal that the stray parameters inside the module play an important role in contributing to such a phenomenon.

AB - This paper investigates the short circuit performance of commercial 1.7 kV / 1 kA IGBT power modules by means of a 6 kA Non-Destructive-Tester. A mismatched current distribution among the parallel chips has been observed, which can reduce the short circuit capability of the IGBT power module under short circuit conditions. Further Spice simulations reveal that the stray parameters inside the module play an important role in contributing to such a phenomenon.

KW - Insulated-Gate Bipolar Transistor (IGBT)

KW - Power Modules

KW - Short Circuit

KW - Current Distribution

U2 - 10.1109/EPE.2015.7311761

DO - 10.1109/EPE.2015.7311761

M3 - Article in proceeding

SP - 1

EP - 9

BT - Proceedings of the 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe)

PB - IEEE Press

T2 - 17th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2015

Y2 - 8 September 2015 through 10 September 2015

ER -

A Comprehensive Investigation on the Short Circuit Performance of MW-level IGBT Power Modules

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