A Fast Electro-Thermal Co-Simulation Modeling Approach for SiC Power MOSFETs

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Resumé

The purpose of this work is to propose a novel electro-thermal co-simulation approach for the new generation of SiC MOSFETs, by development of a PSpice-based compact and physical SiC MOSFET model including temperature dependency of several parameters and a Simulink-based thermal network. The PSpice electrical model is capable to estimate the switching behavior and the energy losses of the device accurately under a wide range of operational conditions, including high temperature operations, within a relatively fast simulation time (few seconds). The the thermal network elements are extracted from the FEM simulation of the DUT’s structure, performed in ANSYS Icepack. A MATLAB script is used to process the simulation data and feed the needed settings and parameters back into the simulation. The parameters for a CREE 1.2 kV/30 A SiC MOSFET have been identified and the electro-thermal model has been validated through experimental and manufacturer’s data.
OriginalsprogEngelsk
TitelProceedings of the 2017 IEEE Applied Power Electronics Conference and Exposition (APEC)
Antal sider8
ForlagIEEE Press
Publikationsdatomar. 2017
Sider966-973
ISBN (Trykt)978-1-5090-5366-7
DOI
StatusUdgivet - mar. 2017
Begivenhed2017 IEEE Applied Power Electronics Conference and Exposition (APEC) - Tampa Convention Center, Tampa, FL, USA
Varighed: 26 mar. 201730 mar. 2017

Konference

Konference2017 IEEE Applied Power Electronics Conference and Exposition (APEC)
LokationTampa Convention Center
LandUSA
ByTampa, FL
Periode26/03/201730/03/2017
NavnIEEE Applied Power Electronics Conference and Exposition (APEC)
ISSN2470-6647

Fingerprint

Computer simulation
High temperature operations
MATLAB
Energy dissipation
Finite element method
Power MOSFET
Hot Temperature
Temperature

Citer dette

Ceccarelli, L., Bahman, A. S., Iannuzzo, F., & Blaabjerg, F. (2017). A Fast Electro-Thermal Co-Simulation Modeling Approach for SiC Power MOSFETs. I Proceedings of the 2017 IEEE Applied Power Electronics Conference and Exposition (APEC) (s. 966-973). IEEE Press. IEEE Applied Power Electronics Conference and Exposition (APEC) https://doi.org/10.1109/APEC.2017.7930813
Ceccarelli, Lorenzo ; Bahman, Amir Sajjad ; Iannuzzo, Francesco ; Blaabjerg, Frede. / A Fast Electro-Thermal Co-Simulation Modeling Approach for SiC Power MOSFETs. Proceedings of the 2017 IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE Press, 2017. s. 966-973 (IEEE Applied Power Electronics Conference and Exposition (APEC)).
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title = "A Fast Electro-Thermal Co-Simulation Modeling Approach for SiC Power MOSFETs",
abstract = "The purpose of this work is to propose a novel electro-thermal co-simulation approach for the new generation of SiC MOSFETs, by development of a PSpice-based compact and physical SiC MOSFET model including temperature dependency of several parameters and a Simulink-based thermal network. The PSpice electrical model is capable to estimate the switching behavior and the energy losses of the device accurately under a wide range of operational conditions, including high temperature operations, within a relatively fast simulation time (few seconds). The the thermal network elements are extracted from the FEM simulation of the DUT’s structure, performed in ANSYS Icepack. A MATLAB script is used to process the simulation data and feed the needed settings and parameters back into the simulation. The parameters for a CREE 1.2 kV/30 A SiC MOSFET have been identified and the electro-thermal model has been validated through experimental and manufacturer’s data.",
keywords = "SiC MOSFET, Modeling and simulation, Electrothermal simulation, PSpice, co-simulation",
author = "Lorenzo Ceccarelli and Bahman, {Amir Sajjad} and Francesco Iannuzzo and Frede Blaabjerg",
year = "2017",
month = "3",
doi = "10.1109/APEC.2017.7930813",
language = "English",
isbn = "978-1-5090-5366-7",
pages = "966--973",
booktitle = "Proceedings of the 2017 IEEE Applied Power Electronics Conference and Exposition (APEC)",
publisher = "IEEE Press",

}

Ceccarelli, L, Bahman, AS, Iannuzzo, F & Blaabjerg, F 2017, A Fast Electro-Thermal Co-Simulation Modeling Approach for SiC Power MOSFETs. i Proceedings of the 2017 IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE Press, IEEE Applied Power Electronics Conference and Exposition (APEC), s. 966-973, Tampa, FL, USA, 26/03/2017. https://doi.org/10.1109/APEC.2017.7930813

A Fast Electro-Thermal Co-Simulation Modeling Approach for SiC Power MOSFETs. / Ceccarelli, Lorenzo; Bahman, Amir Sajjad; Iannuzzo, Francesco; Blaabjerg, Frede.

Proceedings of the 2017 IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE Press, 2017. s. 966-973 (IEEE Applied Power Electronics Conference and Exposition (APEC)).

Publikation: Bidrag til bog/antologi/rapport/konference proceedingKonferenceartikel i proceedingForskningpeer review

TY - GEN

T1 - A Fast Electro-Thermal Co-Simulation Modeling Approach for SiC Power MOSFETs

AU - Ceccarelli, Lorenzo

AU - Bahman, Amir Sajjad

AU - Iannuzzo, Francesco

AU - Blaabjerg, Frede

PY - 2017/3

Y1 - 2017/3

N2 - The purpose of this work is to propose a novel electro-thermal co-simulation approach for the new generation of SiC MOSFETs, by development of a PSpice-based compact and physical SiC MOSFET model including temperature dependency of several parameters and a Simulink-based thermal network. The PSpice electrical model is capable to estimate the switching behavior and the energy losses of the device accurately under a wide range of operational conditions, including high temperature operations, within a relatively fast simulation time (few seconds). The the thermal network elements are extracted from the FEM simulation of the DUT’s structure, performed in ANSYS Icepack. A MATLAB script is used to process the simulation data and feed the needed settings and parameters back into the simulation. The parameters for a CREE 1.2 kV/30 A SiC MOSFET have been identified and the electro-thermal model has been validated through experimental and manufacturer’s data.

AB - The purpose of this work is to propose a novel electro-thermal co-simulation approach for the new generation of SiC MOSFETs, by development of a PSpice-based compact and physical SiC MOSFET model including temperature dependency of several parameters and a Simulink-based thermal network. The PSpice electrical model is capable to estimate the switching behavior and the energy losses of the device accurately under a wide range of operational conditions, including high temperature operations, within a relatively fast simulation time (few seconds). The the thermal network elements are extracted from the FEM simulation of the DUT’s structure, performed in ANSYS Icepack. A MATLAB script is used to process the simulation data and feed the needed settings and parameters back into the simulation. The parameters for a CREE 1.2 kV/30 A SiC MOSFET have been identified and the electro-thermal model has been validated through experimental and manufacturer’s data.

KW - SiC MOSFET

KW - Modeling and simulation

KW - Electrothermal simulation

KW - PSpice

KW - co-simulation

U2 - 10.1109/APEC.2017.7930813

DO - 10.1109/APEC.2017.7930813

M3 - Article in proceeding

SN - 978-1-5090-5366-7

SP - 966

EP - 973

BT - Proceedings of the 2017 IEEE Applied Power Electronics Conference and Exposition (APEC)

PB - IEEE Press

ER -

Ceccarelli L, Bahman AS, Iannuzzo F, Blaabjerg F. A Fast Electro-Thermal Co-Simulation Modeling Approach for SiC Power MOSFETs. I Proceedings of the 2017 IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE Press. 2017. s. 966-973. (IEEE Applied Power Electronics Conference and Exposition (APEC)). https://doi.org/10.1109/APEC.2017.7930813