A Fast-Switching Integrated Full-Bridge Power Module Based on GaN eHEMT Devices

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Resumé

New packaging solutions and power module structures are required to fully utilize the benefits of emerging commercially available wide bandgap semiconductor devices. Conventional packaging solutions for power levels of a few kilowatt are bulky, meaning important gate driver and measurement circuitry are not properly integrated. This paper presents a fast-switching integrated power module based on gallium nitride enhancement-mode high-electron-mobility transistors, which is easier to manufacture compared with other hybrid structures. The structure of the proposed power module is presented, and the design of its gate driver circuit and board layout structure is discussed. The thermal characteristics of the designed power module are evaluated using COMSOL Multiphysics. An ANSYS Q3D Extractor is used to extract the parasitics of the designed power module, and is included in simulation models of various complexities. The simulation model includes the SPICE model of the gallium nitride devices, and parasitics of components are included by experimentally characterizing them up to 2 GHz. Finally, the designed power module is tested experimentally, and its switching characteristics cohere with the results of the simulation model. The experimental results show a maximum achieved switching transient of 64 V/ns and verify the power loop inductance of 2.65 nH.
OriginalsprogEngelsk
Artikelnummer8375808
TidsskriftIEEE Transactions on Power Electronics
Vol/bind34
Udgave nummer3
Sider (fra-til)2494-2504
Antal sider11
ISSN0885-8993
DOI
StatusUdgivet - mar. 2019

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Gallium nitride
Packaging
SPICE
High electron mobility transistors
Semiconductor devices
Inductance
Energy gap
Networks (circuits)
Hot Temperature

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title = "A Fast-Switching Integrated Full-Bridge Power Module Based on GaN eHEMT Devices",
abstract = "New packaging solutions and power module structures are required to fully utilize the benefits of emerging commercially available wide bandgap semiconductor devices. Conventional packaging solutions for power levels of a few kilowatt are bulky, meaning important gate driver and measurement circuitry are not properly integrated. This paper presents a fast-switching integrated power module based on gallium nitride enhancement-mode high-electron-mobility transistors, which is easier to manufacture compared with other hybrid structures. The structure of the proposed power module is presented, and the design of its gate driver circuit and board layout structure is discussed. The thermal characteristics of the designed power module are evaluated using COMSOL Multiphysics. An ANSYS Q3D Extractor is used to extract the parasitics of the designed power module, and is included in simulation models of various complexities. The simulation model includes the SPICE model of the gallium nitride devices, and parasitics of components are included by experimentally characterizing them up to 2 GHz. Finally, the designed power module is tested experimentally, and its switching characteristics cohere with the results of the simulation model. The experimental results show a maximum achieved switching transient of 64 V/ns and verify the power loop inductance of 2.65 nH.",
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A Fast-Switching Integrated Full-Bridge Power Module Based on GaN eHEMT Devices. / Jørgensen, Asger Bjørn; Beczkowski, Szymon; Uhrenfeldt, Christian; Høgholt Petersen, Niels; Jørgensen, Søren; Munk-Nielsen, Stig.

I: IEEE Transactions on Power Electronics, Bind 34, Nr. 3, 8375808, 03.2019, s. 2494-2504.

Publikation: Bidrag til tidsskriftTidsskriftartikelForskningpeer review

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