A High Power Density Two-Stage GaN-Based Isolated Bi-Directional DC-DC Converter

Shaokang Luan; Zongheng Wu; Zhiwei Wang; Xinmin Liu; Cai Chen; Yong Kang

doi:10.1109/ECCE.2019.8912169

A High Power Density Two-Stage GaN-Based Isolated Bi-Directional DC-DC Converter

Shaokang Luan, Zongheng Wu, Zhiwei Wang, Xinmin Liu, Cai Chen, Yong Kang

Publikation: Bidrag til tidsskrift › Konferenceartikel i tidsskrift › Forskning › peer review

15 Citationer (Scopus)

Abstract

Gallium Nitride (GaN) high-electron-mobility transistor (HEMT) is widely used in isolated bi-directional DC-DC converters for electric vehicle charger, photovoltaic system, datacenter, etc. The trend of isolated bi-directional DC-DC converters is high efficiency, high frequency and high power density. In this paper, a 400W 400V/18V~25V two-stage GaN-based isolated bi-directional DC-DC converter is proposed. A low cost three PCBs stacked structure is proposed to design LLC transformer and Buck/Boost filter inductor. Finally, a standalone prototype converter is demonstrated to verify the front design. The prototype achieves peak closed-loop efficiency of 96.5%, closed-loop control error less than 1% and power density of 107W/in³.

Originalsprog	Engelsk
Bogserie	2019 IEEE Energy Conversion Congress and Exposition, ECCE 2019
Sider (fra-til)	3240-3244
Antal sider	5
DOI	https://doi.org/10.1109/ECCE.2019.8912169
Status	Udgivet - sep. 2019
Udgivet eksternt	Ja
Begivenhed	11th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2019 - Baltimore, USA Varighed: 29 sep. 2019 → 3 okt. 2019

Konference

Konference	11th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2019
Land/Område	USA
By	Baltimore
Periode	29/09/2019 → 03/10/2019
Sponsor	IEEE Industry Application Society (IAS), IEEE Power Electronics Society (PELS)

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Publisher Copyright:
© 2019 IEEE.

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10.1109/ECCE.2019.8912169

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Citationsformater

@inproceedings{5059cc8fc19440b7be2bf5af05a97be9,

title = "A High Power Density Two-Stage GaN-Based Isolated Bi-Directional DC-DC Converter",

abstract = "Gallium Nitride (GaN) high-electron-mobility transistor (HEMT) is widely used in isolated bi-directional DC-DC converters for electric vehicle charger, photovoltaic system, datacenter, etc. The trend of isolated bi-directional DC-DC converters is high efficiency, high frequency and high power density. In this paper, a 400W 400V/18V~25V two-stage GaN-based isolated bi-directional DC-DC converter is proposed. A low cost three PCBs stacked structure is proposed to design LLC transformer and Buck/Boost filter inductor. Finally, a standalone prototype converter is demonstrated to verify the front design. The prototype achieves peak closed-loop efficiency of 96.5%, closed-loop control error less than 1% and power density of 107W/in3.",

keywords = "Gallium Nitride, High-electron-mobility transistor, LLC resonant converter, Planar transformer",

author = "Shaokang Luan and Zongheng Wu and Zhiwei Wang and Xinmin Liu and Cai Chen and Yong Kang",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 11th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2019 ; Conference date: 29-09-2019 Through 03-10-2019",

year = "2019",

month = sep,

doi = "10.1109/ECCE.2019.8912169",

language = "English",

pages = "3240--3244",

journal = "2019 IEEE Energy Conversion Congress and Exposition, ECCE 2019",

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T1 - A High Power Density Two-Stage GaN-Based Isolated Bi-Directional DC-DC Converter

AU - Luan, Shaokang

AU - Wu, Zongheng

AU - Wang, Zhiwei

AU - Liu, Xinmin

AU - Chen, Cai

AU - Kang, Yong

PY - 2019/9

Y1 - 2019/9

N2 - Gallium Nitride (GaN) high-electron-mobility transistor (HEMT) is widely used in isolated bi-directional DC-DC converters for electric vehicle charger, photovoltaic system, datacenter, etc. The trend of isolated bi-directional DC-DC converters is high efficiency, high frequency and high power density. In this paper, a 400W 400V/18V~25V two-stage GaN-based isolated bi-directional DC-DC converter is proposed. A low cost three PCBs stacked structure is proposed to design LLC transformer and Buck/Boost filter inductor. Finally, a standalone prototype converter is demonstrated to verify the front design. The prototype achieves peak closed-loop efficiency of 96.5%, closed-loop control error less than 1% and power density of 107W/in3.

AB - Gallium Nitride (GaN) high-electron-mobility transistor (HEMT) is widely used in isolated bi-directional DC-DC converters for electric vehicle charger, photovoltaic system, datacenter, etc. The trend of isolated bi-directional DC-DC converters is high efficiency, high frequency and high power density. In this paper, a 400W 400V/18V~25V two-stage GaN-based isolated bi-directional DC-DC converter is proposed. A low cost three PCBs stacked structure is proposed to design LLC transformer and Buck/Boost filter inductor. Finally, a standalone prototype converter is demonstrated to verify the front design. The prototype achieves peak closed-loop efficiency of 96.5%, closed-loop control error less than 1% and power density of 107W/in3.

KW - Gallium Nitride

KW - High-electron-mobility transistor

KW - LLC resonant converter

KW - Planar transformer

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U2 - 10.1109/ECCE.2019.8912169

DO - 10.1109/ECCE.2019.8912169

M3 - Conference article in Journal

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EP - 3244

JO - 2019 IEEE Energy Conversion Congress and Exposition, ECCE 2019

JF - 2019 IEEE Energy Conversion Congress and Exposition, ECCE 2019

T2 - 11th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2019

Y2 - 29 September 2019 through 3 October 2019

ER -

A High Power Density Two-Stage GaN-Based Isolated Bi-Directional DC-DC Converter

Abstract

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