A Mitigation Strategy for the Short-Circuit Degradation in SiC MOSFETs

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Abstrakt

The demand for highly reliable SiC MOSFETs is growing in the field applications, especially considering the short-circuit conditions. With the development of faster protection, short-circuit faults may occur many times within its expected service life, which only causes short-circuit degradation, rather than destructive failure. Based on finite element method simulation and experimental waveforms, this paper investigates the thermal and mechanical behavior of SiC MOSFET during short-circuit conditions, aiming to propose a package-level strategy to mitigate this short-circuit degradation and the results indicate that the front package design with sintered copper foil could be an effective approach.
OriginalsprogEngelsk
TitelIEEE Workshop on Wide Bandgap Power Devices and Applications in Asia 2020
Antal sider4
Sider1-4
StatusUnder udarbejdelse - 2020
Begivenhed2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia -
Varighed: 23 sep. 202025 sep. 2020
http://www.wipda-asia2020.org/

Konference

Konference2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Periode23/09/202025/09/2020
Internetadresse

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