The demand for highly reliable SiC MOSFETs is growing in the field applications, especially considering the short-circuit conditions. With the development of faster protection, short-circuit faults may occur many times within its expected service life, which only causes short-circuit degradation, rather than destructive failure. Based on finite element method simulation and experimental waveforms, this paper investigates the thermal and mechanical behavior of SiC MOSFET during short-circuit conditions, aiming to propose a package-level strategy to mitigate this short-circuit degradation and the results indicate that the front package design with sintered copper foil could be an effective approach.
|Titel||IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia 2020|
|Status||Under udarbejdelse - 2020|
|Begivenhed||2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia - |
Varighed: 23 sep. 2020 → 25 sep. 2020
|Konference||2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia|
|Periode||23/09/2020 → 25/09/2020|