TY - GEN
T1 - A Modified Boost Converter with Triswitching State and VLSI module for DC Nanogrid Application
AU - Gore, Sheetal
AU - Maroti, Pandav Kiran
AU - Iqbal, Atif
AU - Sanjeevikumar, P.
AU - Leonowicz, Zbigniew
AU - Blaabjerg, Frede
N1 - Funding Information:
This publication was made possible by Qatar University-Marubeni Concept to Prototype Development Research grant # [M-CTP-CENG-2020-2] from the Qatar University. The statements made herein are solely the responsibility of the authors.
Publisher Copyright:
© 2020 IEEE.
Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2020/6
Y1 - 2020/6
N2 - In this paper, new members of the Modified Boost Converter (MBC) family are introduced named as Modified tri switching state boost converter (MTSSB) with voltage boosting module. Additionally, one more extra switching mode is introduced to boost the voltage gain and for full range voltage control. The proposed configuration is designed by incorporating the voltage lift switched inductor (VLSI) module in the MTSSB converter. Depending upon the placement of the VLSI module, the configurations are named as MTSSBVLSI-XL, MTSSBVLSI-LY, and MTSSBVLSI-XY. The key features of the proposed configurations are: i) three switches controlled by two different duty cycles for full voltage control, ii) continuous input current, iii) lower voltage stress on the switch, and iv) high voltage gain. The proposed converter is developed for 20V/26-400V, 500W, and operating frequency is 50 kHz. The mathematical analysis is done to derive voltage conversion ratio along with operating modes under CCM mode. Simulation results verify the performance of the converter.
AB - In this paper, new members of the Modified Boost Converter (MBC) family are introduced named as Modified tri switching state boost converter (MTSSB) with voltage boosting module. Additionally, one more extra switching mode is introduced to boost the voltage gain and for full range voltage control. The proposed configuration is designed by incorporating the voltage lift switched inductor (VLSI) module in the MTSSB converter. Depending upon the placement of the VLSI module, the configurations are named as MTSSBVLSI-XL, MTSSBVLSI-LY, and MTSSBVLSI-XY. The key features of the proposed configurations are: i) three switches controlled by two different duty cycles for full voltage control, ii) continuous input current, iii) lower voltage stress on the switch, and iv) high voltage gain. The proposed converter is developed for 20V/26-400V, 500W, and operating frequency is 50 kHz. The mathematical analysis is done to derive voltage conversion ratio along with operating modes under CCM mode. Simulation results verify the performance of the converter.
KW - High gain DC-DC converter
KW - nanogrid
KW - triswitching converter
KW - voltage lift switched inductor
UR - http://www.scopus.com/inward/record.url?scp=85090426490&partnerID=8YFLogxK
U2 - 10.1109/EEEIC/ICPSEurope49358.2020.9160607
DO - 10.1109/EEEIC/ICPSEurope49358.2020.9160607
M3 - Article in proceeding
AN - SCOPUS:85090426490
SN - 978-1-7281-7456-3
T3 - Proceedings - 2020 IEEE International Conference on Environment and Electrical Engineering and 2020 IEEE Industrial and Commercial Power Systems Europe, EEEIC / I and CPS Europe 2020
SP - 1
EP - 6
BT - Proceedings - 2020 IEEE International Conference on Environment and Electrical Engineering and 2020 IEEE Industrial and Commercial Power Systems Europe, EEEIC / I and CPS Europe 2020
A2 - Leonowicz, Zhigniew
PB - IEEE Signal Processing Society
T2 - 2020 IEEE International Conference on Environment and Electrical Engineering and 2020 IEEE Industrial and Commercial Power Systems Europe, EEEIC / I and CPS Europe 2020
Y2 - 9 June 2020 through 12 June 2020
ER -