A Multi-Layer RC Thermal Model for Power Modules Adaptable to Different Operating Conditions and Aging

Mohsen Akbari, Amir Sajjad Bahman, Mohammad Tavakoli Bina, Bahman Eskandari, Francesco Iannuzzo, Frede Blaabjerg

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Resumé

Semiconductor devices are often the most vulnerable components of power electronics converters among which thermal failures are the most likely ones. Thus, more accurate but straightforward thermal models are needed to efficiently do actions such as lifetime prediction, thermal management, etc. This paper presents a Foster-type equivalent transient thermal model developed through finite element simulations for a commercial Si IGBT power module. Such thermal models can easily merge into circuit simulation programs and even can be employed as real-time temperature estimators. However, fixed thermal models may give large errors in different operating conditions. In addition, they become unable to satisfactorily estimate temperatures over time, because of the thermal aging phenomenon. Thus, in this study, the thermal model of the power module is developed to be adapted to different boundary conditions - ambient temperature, and cooling system – as well as thermal aging of solder joints, which is the most common failure in the power modules. Also, the thermal model features the effect of power loss, and the cross-coupling effect among nearby semiconductor dies. Comparisons with FEM verify the performance of the studied thermal model.
OriginalsprogEngelsk
TitelProceedings of 2018 20th European Conference on Power Electronics and Applications (EPE'18 ECCE Europe)
Antal sider10
ForlagIEEE
Publikationsdato30 okt. 2018
Sider1-10
Artikelnummer8515416
ISBN (Trykt)978-1-5386-4145-3
ISBN (Elektronisk)978-9-0758-1528-3
StatusUdgivet - 30 okt. 2018
Begivenhed20th European Conference on Power Electronics and Applications (EPE'18 ECCE Europe) - Riga, Letland
Varighed: 17 sep. 201821 sep. 2018

Konference

Konference20th European Conference on Power Electronics and Applications (EPE'18 ECCE Europe)
LandLetland
ByRiga
Periode17/09/201821/09/2018

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Aging of materials
Thermal aging
Hot Temperature
Circuit simulation
Insulated gate bipolar transistors (IGBT)
Semiconductor devices
Power electronics
Cooling systems
Temperature control
Soldering alloys
Temperature
Boundary conditions
Semiconductor materials
Finite element method

Citer dette

Akbari, M., Bahman, A. S., Tavakoli Bina, M., Eskandari, B., Iannuzzo, F., & Blaabjerg, F. (2018). A Multi-Layer RC Thermal Model for Power Modules Adaptable to Different Operating Conditions and Aging. I Proceedings of 2018 20th European Conference on Power Electronics and Applications (EPE'18 ECCE Europe) (s. 1-10). [8515416] IEEE.
Akbari, Mohsen ; Bahman, Amir Sajjad ; Tavakoli Bina, Mohammad ; Eskandari, Bahman ; Iannuzzo, Francesco ; Blaabjerg, Frede. / A Multi-Layer RC Thermal Model for Power Modules Adaptable to Different Operating Conditions and Aging. Proceedings of 2018 20th European Conference on Power Electronics and Applications (EPE'18 ECCE Europe). IEEE, 2018. s. 1-10
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title = "A Multi-Layer RC Thermal Model for Power Modules Adaptable to Different Operating Conditions and Aging",
abstract = "Semiconductor devices are often the most vulnerable components of power electronics converters among which thermal failures are the most likely ones. Thus, more accurate but straightforward thermal models are needed to efficiently do actions such as lifetime prediction, thermal management, etc. This paper presents a Foster-type equivalent transient thermal model developed through finite element simulations for a commercial Si IGBT power module. Such thermal models can easily merge into circuit simulation programs and even can be employed as real-time temperature estimators. However, fixed thermal models may give large errors in different operating conditions. In addition, they become unable to satisfactorily estimate temperatures over time, because of the thermal aging phenomenon. Thus, in this study, the thermal model of the power module is developed to be adapted to different boundary conditions - ambient temperature, and cooling system – as well as thermal aging of solder joints, which is the most common failure in the power modules. Also, the thermal model features the effect of power loss, and the cross-coupling effect among nearby semiconductor dies. Comparisons with FEM verify the performance of the studied thermal model.",
keywords = "Device modeling, IGBT, Reliability, Semiconductor device, Thermal stress",
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Akbari, M, Bahman, AS, Tavakoli Bina, M, Eskandari, B, Iannuzzo, F & Blaabjerg, F 2018, A Multi-Layer RC Thermal Model for Power Modules Adaptable to Different Operating Conditions and Aging. i Proceedings of 2018 20th European Conference on Power Electronics and Applications (EPE'18 ECCE Europe)., 8515416, IEEE, s. 1-10, Riga, Letland, 17/09/2018.

A Multi-Layer RC Thermal Model for Power Modules Adaptable to Different Operating Conditions and Aging. / Akbari, Mohsen; Bahman, Amir Sajjad; Tavakoli Bina, Mohammad; Eskandari, Bahman; Iannuzzo, Francesco; Blaabjerg, Frede.

Proceedings of 2018 20th European Conference on Power Electronics and Applications (EPE'18 ECCE Europe). IEEE, 2018. s. 1-10 8515416.

Publikation: Bidrag til bog/antologi/rapport/konference proceedingKonferenceartikel i proceedingForskningpeer review

TY - GEN

T1 - A Multi-Layer RC Thermal Model for Power Modules Adaptable to Different Operating Conditions and Aging

AU - Akbari, Mohsen

AU - Bahman, Amir Sajjad

AU - Tavakoli Bina, Mohammad

AU - Eskandari, Bahman

AU - Iannuzzo, Francesco

AU - Blaabjerg, Frede

PY - 2018/10/30

Y1 - 2018/10/30

N2 - Semiconductor devices are often the most vulnerable components of power electronics converters among which thermal failures are the most likely ones. Thus, more accurate but straightforward thermal models are needed to efficiently do actions such as lifetime prediction, thermal management, etc. This paper presents a Foster-type equivalent transient thermal model developed through finite element simulations for a commercial Si IGBT power module. Such thermal models can easily merge into circuit simulation programs and even can be employed as real-time temperature estimators. However, fixed thermal models may give large errors in different operating conditions. In addition, they become unable to satisfactorily estimate temperatures over time, because of the thermal aging phenomenon. Thus, in this study, the thermal model of the power module is developed to be adapted to different boundary conditions - ambient temperature, and cooling system – as well as thermal aging of solder joints, which is the most common failure in the power modules. Also, the thermal model features the effect of power loss, and the cross-coupling effect among nearby semiconductor dies. Comparisons with FEM verify the performance of the studied thermal model.

AB - Semiconductor devices are often the most vulnerable components of power electronics converters among which thermal failures are the most likely ones. Thus, more accurate but straightforward thermal models are needed to efficiently do actions such as lifetime prediction, thermal management, etc. This paper presents a Foster-type equivalent transient thermal model developed through finite element simulations for a commercial Si IGBT power module. Such thermal models can easily merge into circuit simulation programs and even can be employed as real-time temperature estimators. However, fixed thermal models may give large errors in different operating conditions. In addition, they become unable to satisfactorily estimate temperatures over time, because of the thermal aging phenomenon. Thus, in this study, the thermal model of the power module is developed to be adapted to different boundary conditions - ambient temperature, and cooling system – as well as thermal aging of solder joints, which is the most common failure in the power modules. Also, the thermal model features the effect of power loss, and the cross-coupling effect among nearby semiconductor dies. Comparisons with FEM verify the performance of the studied thermal model.

KW - Device modeling

KW - IGBT

KW - Reliability

KW - Semiconductor device

KW - Thermal stress

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Akbari M, Bahman AS, Tavakoli Bina M, Eskandari B, Iannuzzo F, Blaabjerg F. A Multi-Layer RC Thermal Model for Power Modules Adaptable to Different Operating Conditions and Aging. I Proceedings of 2018 20th European Conference on Power Electronics and Applications (EPE'18 ECCE Europe). IEEE. 2018. s. 1-10. 8515416