A Novel DBC Layout for Current Imbalance Mitigation in SiC MOSFET Multichip Power Modules

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Abstrakt

This letter proposes a novel direct bonded copper (DBC) layout for mitigating the current imbalance among the paralleled SiC MOSFET dies in multichip power modules. Compared to the traditional layout, the proposed DBC layout significantly reduces the circuit mismatch and current coupling effect, which consequently improves the current sharing among the paralleled SiC MOSFET dies in power module. Mathematic analysis and circuit model of the DBC layout are presented to elaborate the superior features of the proposed DBC layout. Simulation and experimental results further verify the theoretical analysis and current balancing performance of the proposed DBC layout.
OriginalsprogEngelsk
TidsskriftI E E E Transactions on Power Electronics
Vol/bind31
Udgave nummer12
Sider (fra-til)8042 - 8045
Antal sider4
ISSN0885-8993
DOI
StatusUdgivet - dec. 2016

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