A SiC MOSFET Power Module With Integrated Gate Drive for 2.5 MHz Class E Resonant Converters

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Resumé

Industrial processes are still relying on high frequency converters based on vacuum tubes. Emerging silicon carbide semiconductor devices have potential to replace vacuum tubes and bring benefits for converters in the high frequency range. At high switching frequencies hard-switched gate drivers can enable high power density design, but suffer from high temperatures and require low inductive design. This paper addresses the two issues through integrated packaging. Integrating the hard-switched gate driver in the power module ensures a low inductive and high thermal conductive package design. The required gate-source loop inductance is calculated and obtained in the design through use of the simulation software ANSYS Q3D Extractor. Two silicon carbide MOSFET power module prototypes are manufactured on a AlN substrate and FR4 PCB, to compare the thermal performance of the gate driver in the two cases. The electrical performance of the final power module is verified at 2.5 MHz in a Class E resonant converter.
OriginalsprogEngelsk
TitelProceedings of CIPS 2018; 10th International Conference on Integrated Power Electronics Systems
Antal sider6
ForlagVDE Verlag GMBH
Publikationsdatomar. 2018
Sider128-133
ISBN (Trykt)978-3-8007-4540-1
StatusUdgivet - mar. 2018
BegivenhedCIPS 2018 - 10th International Conference on Integrated Power Electronics Systems - Stuttgart, Tyskland
Varighed: 20 mar. 201822 mar. 2018

Konference

KonferenceCIPS 2018 - 10th International Conference on Integrated Power Electronics Systems
LandTyskland
ByStuttgart
Periode20/03/201822/03/2018

Fingerprint

Electron tubes
Silicon carbide
Frequency converters
Switching frequency
Semiconductor devices
Polychlorinated biphenyls
Inductance
Packaging
Power MOSFET
Substrates
Temperature
Hot Temperature

Citer dette

Jørgensen, A. B., Nair, U. R., Munk-Nielsen, S., & Uhrenfeldt, C. (2018). A SiC MOSFET Power Module With Integrated Gate Drive for 2.5 MHz Class E Resonant Converters. I Proceedings of CIPS 2018; 10th International Conference on Integrated Power Electronics Systems (s. 128-133). VDE Verlag GMBH.
Jørgensen, Asger Bjørn ; Nair, Unnikrishnan Raveendran ; Munk-Nielsen, Stig ; Uhrenfeldt, Christian. / A SiC MOSFET Power Module With Integrated Gate Drive for 2.5 MHz Class E Resonant Converters. Proceedings of CIPS 2018; 10th International Conference on Integrated Power Electronics Systems. VDE Verlag GMBH, 2018. s. 128-133
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abstract = "Industrial processes are still relying on high frequency converters based on vacuum tubes. Emerging silicon carbide semiconductor devices have potential to replace vacuum tubes and bring benefits for converters in the high frequency range. At high switching frequencies hard-switched gate drivers can enable high power density design, but suffer from high temperatures and require low inductive design. This paper addresses the two issues through integrated packaging. Integrating the hard-switched gate driver in the power module ensures a low inductive and high thermal conductive package design. The required gate-source loop inductance is calculated and obtained in the design through use of the simulation software ANSYS Q3D Extractor. Two silicon carbide MOSFET power module prototypes are manufactured on a AlN substrate and FR4 PCB, to compare the thermal performance of the gate driver in the two cases. The electrical performance of the final power module is verified at 2.5 MHz in a Class E resonant converter.",
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Jørgensen, AB, Nair, UR, Munk-Nielsen, S & Uhrenfeldt, C 2018, A SiC MOSFET Power Module With Integrated Gate Drive for 2.5 MHz Class E Resonant Converters. i Proceedings of CIPS 2018; 10th International Conference on Integrated Power Electronics Systems. VDE Verlag GMBH, s. 128-133, Stuttgart, Tyskland, 20/03/2018.

A SiC MOSFET Power Module With Integrated Gate Drive for 2.5 MHz Class E Resonant Converters. / Jørgensen, Asger Bjørn; Nair, Unnikrishnan Raveendran; Munk-Nielsen, Stig; Uhrenfeldt, Christian.

Proceedings of CIPS 2018; 10th International Conference on Integrated Power Electronics Systems. VDE Verlag GMBH, 2018. s. 128-133.

Publikation: Bidrag til bog/antologi/rapport/konference proceedingKonferenceartikel i proceedingForskningpeer review

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AU - Uhrenfeldt, Christian

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N2 - Industrial processes are still relying on high frequency converters based on vacuum tubes. Emerging silicon carbide semiconductor devices have potential to replace vacuum tubes and bring benefits for converters in the high frequency range. At high switching frequencies hard-switched gate drivers can enable high power density design, but suffer from high temperatures and require low inductive design. This paper addresses the two issues through integrated packaging. Integrating the hard-switched gate driver in the power module ensures a low inductive and high thermal conductive package design. The required gate-source loop inductance is calculated and obtained in the design through use of the simulation software ANSYS Q3D Extractor. Two silicon carbide MOSFET power module prototypes are manufactured on a AlN substrate and FR4 PCB, to compare the thermal performance of the gate driver in the two cases. The electrical performance of the final power module is verified at 2.5 MHz in a Class E resonant converter.

AB - Industrial processes are still relying on high frequency converters based on vacuum tubes. Emerging silicon carbide semiconductor devices have potential to replace vacuum tubes and bring benefits for converters in the high frequency range. At high switching frequencies hard-switched gate drivers can enable high power density design, but suffer from high temperatures and require low inductive design. This paper addresses the two issues through integrated packaging. Integrating the hard-switched gate driver in the power module ensures a low inductive and high thermal conductive package design. The required gate-source loop inductance is calculated and obtained in the design through use of the simulation software ANSYS Q3D Extractor. Two silicon carbide MOSFET power module prototypes are manufactured on a AlN substrate and FR4 PCB, to compare the thermal performance of the gate driver in the two cases. The electrical performance of the final power module is verified at 2.5 MHz in a Class E resonant converter.

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Jørgensen AB, Nair UR, Munk-Nielsen S, Uhrenfeldt C. A SiC MOSFET Power Module With Integrated Gate Drive for 2.5 MHz Class E Resonant Converters. I Proceedings of CIPS 2018; 10th International Conference on Integrated Power Electronics Systems. VDE Verlag GMBH. 2018. s. 128-133