A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis

L. Ceccarelli; P. D. Reigosa; F. Iannuzzo; F. Blaabjerg

doi:10.1016/j.microrel.2017.06.093

A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis

L. Ceccarelli^*, P. D. Reigosa, F. Iannuzzo, F. Blaabjerg

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Publikation: Bidrag til tidsskrift › Konferenceartikel i tidsskrift › Forskning › peer review

77 Citationer (Scopus)

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Abstract

The aim of this paper is to provide an extensive overview about the state-of-art commercially available SiC power MOSFET, focusing on their short-circuit ruggedness. A detailed literature investigation has been carried out, in order to collect and understand the latest research contribution within this topic and create a survey of the present scenario of SiC MOSFETs reliability evaluation and failure mode analysis, pointing out the evolution and improvements as well as the future challenges in this promising device technology.

Originalsprog	Engelsk
Tidsskrift	Microelectronics Reliability
Vol/bind	76-77
Sider (fra-til)	272-276
Antal sider	5
ISSN	0026-2714
DOI	https://doi.org/10.1016/j.microrel.2017.06.093
Status	Udgivet - sep. 2017
Begivenhed	28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF) - Bordeaux, Frankrig Varighed: 25 sep. 2017 → 28 sep. 2017

Konference

Konference	28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)
Land/Område	Frankrig
By	Bordeaux
Periode	25/09/2017 → 28/09/2017

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10.1016/j.microrel.2017.06.093

A Survey of SiC Power MOSFETs Short-CircuitAccepteret manuskript, 1,13 MBLicens: CC BY-NC-ND 4.0

AUB Link

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http://www.scopus.com/inward/record.url?scp=85022087628&partnerID=8YFLogxK

Center Of Reliable Power Electronics (CORPE)
Blaabjerg, F., Munk-Nielsen, S., Pedersen, K. & Popok, V.
01/04/2011 → 31/12/2016
Projekter: Projekt › Forskning

28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)
Lorenzo Ceccarelli (Foredragsholder)
25 sep. 2017 → 28 sep. 2017
Aktivitet: Foredrag og mundtlige bidrag › Konferenceoplæg

Citationsformater

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title = "A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis",

abstract = "The aim of this paper is to provide an extensive overview about the state-of-art commercially available SiC power MOSFET, focusing on their short-circuit ruggedness. A detailed literature investigation has been carried out, in order to collect and understand the latest research contribution within this topic and create a survey of the present scenario of SiC MOSFETs reliability evaluation and failure mode analysis, pointing out the evolution and improvements as well as the future challenges in this promising device technology.",

keywords = "Failure mechanisms, Short-circuit, Short-circuit ruggedness, SiC MOSFETs",

author = "L. Ceccarelli and Reigosa, {P. D.} and F. Iannuzzo and F. Blaabjerg",

year = "2017",

month = sep,

doi = "10.1016/j.microrel.2017.06.093",

language = "English",

volume = "76-77",

pages = "272--276",

journal = "Microelectronics Reliability",

issn = "0026-2714",

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AU - Iannuzzo, F.

AU - Blaabjerg, F.

PY - 2017/9

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N2 - The aim of this paper is to provide an extensive overview about the state-of-art commercially available SiC power MOSFET, focusing on their short-circuit ruggedness. A detailed literature investigation has been carried out, in order to collect and understand the latest research contribution within this topic and create a survey of the present scenario of SiC MOSFETs reliability evaluation and failure mode analysis, pointing out the evolution and improvements as well as the future challenges in this promising device technology.

AB - The aim of this paper is to provide an extensive overview about the state-of-art commercially available SiC power MOSFET, focusing on their short-circuit ruggedness. A detailed literature investigation has been carried out, in order to collect and understand the latest research contribution within this topic and create a survey of the present scenario of SiC MOSFETs reliability evaluation and failure mode analysis, pointing out the evolution and improvements as well as the future challenges in this promising device technology.

KW - Failure mechanisms

KW - Short-circuit

KW - Short-circuit ruggedness

KW - SiC MOSFETs

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U2 - 10.1016/j.microrel.2017.06.093

DO - 10.1016/j.microrel.2017.06.093

M3 - Conference article in Journal

AN - SCOPUS:85022087628

SN - 0026-2714

VL - 76-77

SP - 272

EP - 276

JO - Microelectronics Reliability

JF - Microelectronics Reliability

T2 - 28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)

Y2 - 25 September 2017 through 28 September 2017

ER -

A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis

Abstract

Konference

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Projekter

Center Of Reliable Power Electronics (CORPE)

Aktiviteter

28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)

Citationsformater