A Temperature-Dependent dVCE/dt and dIC/dt Model for Field-Stop IGBT at Turn-on Transient

In this article, a complete expression for dVCE/dt and dIC/dt at turn-on transient of field-stop (FS) insulated gate bipolar transistor (IGBT) is proposed. With numerical simulation utilized, the critical stray elements and internal physics which have a significant impact on turn-on behavior of FS IGBT are identified. Based on the improved understanding on the turn-on behavior, the turn-on transient is divided into two phases and the equivalent circuits of each phase are obtained. The analytical expressions of dVCE/dt and dIC/dt during the turn-on transient are thereby derived based on the equivalent circuits. The temperature dependency on the turn-on characteristics of FS IGBT is identified by the experimental data. The temperature-dependent models of various device parameters are proposed to describe the temperature dependency. In the end, the double-pulse test is performed on a 650-V FS IGBT and a 1200-V FS IGBT. The good agreement between the test and analytically derived results validates that the proposed FS IGBT model can accurately predict the dVCE/dt and dIC/dt during the turn-on transient.