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Abstract
This paper proposes a temperature dependent lumped-charge model for FS-IGBT. Due to the evolution of the IGBT structure, the existing lumped-charge IGBT model established for NPT-IGBT is not suitable for the simulation of FS-IGBT. This paper extends the lumped-charge IGBT model including the field-stop (FS) structure and temperature characteristics. The temperature characteristics of the model are considered for both the bipolar part and unipolar part. In addition, a new PN junction model which can distinguish the collector structure is presented and validated by TCAD simulation. Finally, the lumped-charge FS-IGBT model is implemented in PSPICE and verified by experiments with Infineon FF1000R17IE4 IGBT.
Originalsprog | Engelsk |
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Titel | IEEE Applied Power Electronics Conference and Exposition (APEC), 2018 : APEC 2018 |
Antal sider | 6 |
Forlag | IEEE Press |
Publikationsdato | 2018 |
Sider | 249-254 |
ISBN (Trykt) | 978-1-5386-1181-4 |
ISBN (Elektronisk) | 978-1-5386-1180-7 |
DOI | |
Status | Udgivet - 2018 |
Begivenhed | 2018 IEEE Applied Power Electronics Conference and Exposition (APEC) - San Antonio, USA Varighed: 4 mar. 2018 → 8 mar. 2018 |
Konference
Konference | 2018 IEEE Applied Power Electronics Conference and Exposition (APEC) |
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Land/Område | USA |
By | San Antonio |
Periode | 04/03/2018 → 08/03/2018 |
Navn | IEEE Applied Power Electronics Conference and Exposition (APEC) |
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ISSN | 2470-6647 |
Fingeraftryk
Dyk ned i forskningsemnerne om 'A Temperature Dependent Lumped-charge Model for Trench FS-IGBT'. Sammen danner de et unikt fingeraftryk.Projekter
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Center Of Reliable Power Electronics (CORPE)
Blaabjerg, F., Munk-Nielsen, S., Pedersen, K. & Popok, V.
01/04/2011 → 31/12/2016
Projekter: Projekt › Forskning