A Temperature-Dependent Thermal Model of IGBT Modules Suitable for Circuit-Level Simulations

Rui Wu; Huai Wang; Ke Ma; Pramod Ghimire; Francesco Iannuzzo; Frede Blaabjerg

doi:10.1109/ECCE.2014.6953793

A Temperature-Dependent Thermal Model of IGBT Modules Suitable for Circuit-Level Simulations

Rui Wu, Huai Wang, Ke Ma, Pramod Ghimire, Francesco Iannuzzo, Frede Blaabjerg

AAU Energi

Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

19 Citationer (Scopus)

1566 Downloads (Pure)

Abstrakt

Thermal impedance of IGBT modules may vary with operating conditions due to that the thermal conductivity and heat capacity of materials are temperature dependent. This paper proposes a Cauer thermal model for a 1700 V/1000 A IGBT module with temperature-dependent thermal resistances and thermal capacitances. The temperature effect is investigated by Finite Element Method (FEM) simulation based on the geometry and material information of the IGBT module. The developed model is ready for circuit-level simulation to achieve an improved accuracy of the estimation on IGBT junction temperature and its relevant reliability aspect performance. A test bench is built up with an ultra-fast infrared (IR) camera to validate the proposed thermal impedance model.

Originalsprog	Engelsk
Titel	Proceedings of the 2014 IEEE Energy Conversion Congress and Exposition (ECCE)
Antal sider	8
Forlag	IEEE Press
Publikationsdato	sep. 2014
Sider	2901-2908
ISBN (Trykt)	978-1-4799-5776-7
DOI	https://doi.org/10.1109/ECCE.2014.6953793
Status	Udgivet - sep. 2014
Begivenhed	2014 IEEE Energy Conversion Congress and Exposition (ECCE) - Pittsburgh, Pittsburgh, USA Varighed: 14 sep. 2014 → 18 sep. 2014

Konference

Konference	2014 IEEE Energy Conversion Congress and Exposition (ECCE)
Lokation	Pittsburgh
Land/Område	USA
By	Pittsburgh
Periode	14/09/2014 → 18/09/2014

Adgang til dokumentet

10.1109/ECCE.2014.6953793

A Temperature-dependent Thermal Model of IGBT Modules Suitable for Circuit-level SimulationsIndsendt manuskript, 648 KB

http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6953793&queryText%3DA+Temperature-Dependent+Thermal+Model+of+IGBT+Modules+Suitable+for+Circuit-Level+Simulations

1 Afsluttet

Center Of Reliable Power Electronics (CORPE)
Blaabjerg, F., Munk-Nielsen, S., Pedersen, K. & Popok, V.
01/04/2011 → 31/12/2016
Projekter: Projekt › Forskning

1 Konferenceoplæg

2014 IEEE Energy Conversion Congress and Exposition (ECCE)
Huai Wang (Oplægsholder)
14 sep. 2014 → 19 sep. 2014
Aktivitet: Foredrag og mundtlige bidrag › Konferenceoplæg

Citationsformater

@inproceedings{223ebb75195a4216aab18c769cff666e,

title = "A Temperature-Dependent Thermal Model of IGBT Modules Suitable for Circuit-Level Simulations",

abstract = "Thermal impedance of IGBT modules may vary with operating conditions due to that the thermal conductivity and heat capacity of materials are temperature dependent. This paper proposes a Cauer thermal model for a 1700 V/1000 A IGBT module with temperature-dependent thermal resistances and thermal capacitances. The temperature effect is investigated by Finite Element Method (FEM) simulation based on the geometry and material information of the IGBT module. The developed model is ready for circuit-level simulation to achieve an improved accuracy of the estimation on IGBT junction temperature and its relevant reliability aspect performance. A test bench is built up with an ultra-fast infrared (IR) camera to validate the proposed thermal impedance model.",

author = "Rui Wu and Huai Wang and Ke Ma and Pramod Ghimire and Francesco Iannuzzo and Frede Blaabjerg",

year = "2014",

month = sep,

doi = "10.1109/ECCE.2014.6953793",

language = "English",

isbn = "978-1-4799-5776-7",

pages = "2901--2908",

booktitle = "Proceedings of the 2014 IEEE Energy Conversion Congress and Exposition (ECCE)",

publisher = "IEEE Press",

note = "2014 IEEE Energy Conversion Congress and Exposition (ECCE) ; Conference date: 14-09-2014 Through 18-09-2014",

}

Wu, R, Wang, H, Ma, K, Ghimire, P, Iannuzzo, F & Blaabjerg, F 2014, A Temperature-Dependent Thermal Model of IGBT Modules Suitable for Circuit-Level Simulations. i Proceedings of the 2014 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE Press, s. 2901-2908, 2014 IEEE Energy Conversion Congress and Exposition (ECCE), Pittsburgh, USA, 14/09/2014. https://doi.org/10.1109/ECCE.2014.6953793

A Temperature-Dependent Thermal Model of IGBT Modules Suitable for Circuit-Level Simulations. / Wu, Rui; Wang, Huai; Ma, Ke; Ghimire, Pramod; Iannuzzo, Francesco ; Blaabjerg, Frede.

Proceedings of the 2014 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE Press, 2014. s. 2901-2908.

Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

TY - GEN

T1 - A Temperature-Dependent Thermal Model of IGBT Modules Suitable for Circuit-Level Simulations

AU - Wu, Rui

AU - Wang, Huai

AU - Ma, Ke

AU - Ghimire, Pramod

AU - Iannuzzo, Francesco

AU - Blaabjerg, Frede

PY - 2014/9

Y1 - 2014/9

N2 - Thermal impedance of IGBT modules may vary with operating conditions due to that the thermal conductivity and heat capacity of materials are temperature dependent. This paper proposes a Cauer thermal model for a 1700 V/1000 A IGBT module with temperature-dependent thermal resistances and thermal capacitances. The temperature effect is investigated by Finite Element Method (FEM) simulation based on the geometry and material information of the IGBT module. The developed model is ready for circuit-level simulation to achieve an improved accuracy of the estimation on IGBT junction temperature and its relevant reliability aspect performance. A test bench is built up with an ultra-fast infrared (IR) camera to validate the proposed thermal impedance model.

AB - Thermal impedance of IGBT modules may vary with operating conditions due to that the thermal conductivity and heat capacity of materials are temperature dependent. This paper proposes a Cauer thermal model for a 1700 V/1000 A IGBT module with temperature-dependent thermal resistances and thermal capacitances. The temperature effect is investigated by Finite Element Method (FEM) simulation based on the geometry and material information of the IGBT module. The developed model is ready for circuit-level simulation to achieve an improved accuracy of the estimation on IGBT junction temperature and its relevant reliability aspect performance. A test bench is built up with an ultra-fast infrared (IR) camera to validate the proposed thermal impedance model.

U2 - 10.1109/ECCE.2014.6953793

DO - 10.1109/ECCE.2014.6953793

M3 - Article in proceeding

SN - 978-1-4799-5776-7

SP - 2901

EP - 2908

BT - Proceedings of the 2014 IEEE Energy Conversion Congress and Exposition (ECCE)

PB - IEEE Press

T2 - 2014 IEEE Energy Conversion Congress and Exposition (ECCE)

Y2 - 14 September 2014 through 18 September 2014

ER -

A Temperature-Dependent Thermal Model of IGBT Modules Suitable for Circuit-Level Simulations

Abstrakt

Konference

Adgang til dokumentet

Fingeraftryk

Projekter

Center Of Reliable Power Electronics (CORPE)

Aktiviteter

2014 IEEE Energy Conversion Congress and Exposition (ECCE)

Citationsformater