A Temperature-Dependent Thermal Model of IGBT Modules Suitable for Circuit-Level Simulations

Rui Wu, Huai Wang, Ke Ma, Pramod Ghimire, Francesco Iannuzzo, Frede Blaabjerg

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19 Citationer (Scopus)
1566 Downloads (Pure)

Abstrakt

Thermal impedance of IGBT modules may vary with operating conditions due to that the thermal conductivity and heat capacity of materials are temperature dependent. This paper proposes a Cauer thermal model for a 1700 V/1000 A IGBT module with temperature-dependent thermal resistances and thermal capacitances. The temperature effect is investigated by Finite Element Method (FEM) simulation based on the geometry and material information of the IGBT module. The developed model is ready for circuit-level simulation to achieve an improved accuracy of the estimation on IGBT junction temperature and its relevant reliability aspect performance. A test bench is built up with an ultra-fast infrared (IR) camera to validate the proposed thermal impedance model.
OriginalsprogEngelsk
TitelProceedings of the 2014 IEEE Energy Conversion Congress and Exposition (ECCE)
Antal sider8
ForlagIEEE Press
Publikationsdatosep. 2014
Sider2901-2908
ISBN (Trykt)978-1-4799-5776-7
DOI
StatusUdgivet - sep. 2014
Begivenhed2014 IEEE Energy Conversion Congress and Exposition (ECCE) - Pittsburgh, Pittsburgh, USA
Varighed: 14 sep. 201418 sep. 2014

Konference

Konference2014 IEEE Energy Conversion Congress and Exposition (ECCE)
LokationPittsburgh
Land/OmrådeUSA
ByPittsburgh
Periode14/09/201418/09/2014

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