A Temperature-dependent Thermal Model of Silicon Carbide MOSFET Module for Long-term Reliability Assessment

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Abstrakt

The silicon carbide (SiC) device is by far the most promising technology for the next-generation power electronic systems. However, the wide application of SiC device is inhibited by its reliability uncertainties, and a comprehensive SiC thermal model, which considers the temperature-dependency, is still missing for long-term reliability assessment. Thus, this paper proposes a temperature-dependent thermal model of SiC MOSFET module, which is composed of RC lumped elements and it is suitable for long-term reliability analysis. To begin with, the temperature-dependent thermal properties of the packaging materials (including SiC) are fully investigated. Then, the finite element method (FEM) based analysis containing temperature-dependency is utilized to extract both the self-heating and cross-coupling thermal impedances. Finally, a diagram of the RC lumped temperature-dependent thermal model is proposed, which is verified using a 3-level active neutral-point clamped (3-L ANPC) study case by performing its PLECS simulation.
OriginalsprogEngelsk
TitelProceedings of the IEEE 4th Southern Power Electronics Conference (SPEC 2018)
Antal sider7
ForlagIEEE Press
Publikationsdatodec. 2018
Sider1-7
ISBN (Trykt)978-1-5386-8258-6
ISBN (Elektronisk)978-1-5386-8257-9
DOI
StatusUdgivet - dec. 2018
BegivenhedThe 4th IEEE Southern Power Electronics Conference, SPEC 2018 - Nanyang Technological University, Singapore
Varighed: 10 dec. 201813 dec. 2018

Konference

KonferenceThe 4th IEEE Southern Power Electronics Conference, SPEC 2018
LokationNanyang Technological University
LandSingapore
Periode10/12/201813/12/2018

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