Accelerated Testing and Modeling of Potential-Induced Degradation as a Function of Temperature and Relative Humidity

Peter Hacke, Sergiu Spataru, Kent Terwilliger, Greg Perrin, Stephen Glick, Sarah Kurtz, John Wohlgemuth

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5 Citationer (Scopus)

Abstrakt

An acceleration model based on the Peck equation was applied to power performance of crystalline silicon cell modules as a function of time and of temperature and humidity, the two main environmental stress factors that promote potential-induced degradation. This model was derived from module power degradation data obtained semi-continuously and statistically by in-situ dark current-voltage measurements in an environmental chamber. The modeling enables prediction of degradation rates and times as functions of temperature and humidity. Power degradation could be modeled linearly as a function of time to the second power; additionally, we found that coulombs transferred from the active cell circuit to ground during the stress test is approximately linear with time. Therefore, the power loss could be linearized as a function of coulombs squared. With this result, we observed that when the module face was completely grounded with a condensed phase conductor, leakage current exceeded the anticipated corresponding degradation rate relative to the other tests performed in damp heat.
OriginalsprogEngelsk
TitelProceedings of the 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)
Antal sider5
ForlagIEEE Press
Publikationsdato2015
Sider1-5
ISBN (Elektronisk)978-1-4799-7944-8
DOI
StatusUdgivet - 2015
Begivenhed42nd IEEE Photovoltaic Specialists Conference - New Orleans, LA, USA
Varighed: 14 jun. 201519 jun. 2015
Konferencens nummer: 42

Konference

Konference42nd IEEE Photovoltaic Specialists Conference
Nummer42
LandUSA
ByNew Orleans, LA
Periode14/06/201519/06/2015
NavnI E E E Photovoltaic Specialists Conference. Conference Record
Vol/bind42
ISSN0160-8371

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