Active Thermal Control for Reliability Improvement of MOS-gated Power Devices

Alessandro Soldati, Carlo Concari, Fabrizio Dossena, Davide Barater, Francesco Iannuzzo, Frede Blaabjerg

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1 Citationer (Scopus)

Abstrakt

This paper proposes an Active Thermal Control (ATC) method for MOS-gated power switches aimed at reducing temperature swing amplitude during operation. It leverages on the fact that thermal cycle amplitude of many actuation system components (such as power devices) has a large impact on the system reliability and lifetime. These figures can then be improved, which eases the adoption of electrification in markets, such as transportation, where they are still below target values. The proposed ATC method leaves electric load parameters untouched, while acting dynamically on gate parameters, namely voltage and resistance. A model-predictive control (MPC) strategy is used to determine the most suitable parameters to use. Simulations of the control scheme are presented first, to predict the potential benefits on temperature swing amplitude, and the consequent improvements in terms of device lifetime are inferred, using literature models. Then, experimental proof of concept is presented and discussed, together with its limitations and drawbacks.
OriginalsprogEngelsk
TitelProceedings of 43rd Annual Conference of the IEEE Industrial Electronics Society, IECON 2017
Antal sider6
ForlagIEEE Press
Publikationsdatookt. 2017
Sider7935-7940
DOI
StatusUdgivet - okt. 2017
Begivenhed43rd Annual Conference of the IEEE Industrial Electronics Society, IECON 2017 - Beijing, Kina
Varighed: 29 okt. 20171 nov. 2017

Konference

Konference43rd Annual Conference of the IEEE Industrial Electronics Society, IECON 2017
LandKina
ByBeijing
Periode29/10/201701/11/2017
SponsorChinese Association of Automation (CAA), Chinese Power Supply Society, et al., IEEE Industrial Electronics Society (IES), Systems Engineering Society of China, The Institute of Electrical and Electronics Engineers (IEEE)

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