Advanced Accelerated Power Cycling Test for Reliability Investigation of Power Device Modules

Uimin Choi, Søren Jørgensen, Frede Blaabjerg

Publikation: Bidrag til tidsskriftTidsskriftartikelForskningpeer review

82 Citationer (Scopus)
552 Downloads (Pure)

Abstrakt

This paper presents an apparatus and methodology for an advanced accelerated power cycling test of insulated-gate bipolar transistor (IGBT) modules. In this test, the accelerated power cycling test can be performed under more realistic electrical operating conditions with online wear-out monitoring of tested power IGBT module. The various realistic electrical operating conditions close to real three-phase converter applications can be achieved by the simple control method. Further, by the proposed concept of applying the temperature stress, it is possible to apply various magnitudes of temperature swing in a short cycle period and to change the temperature cycle period easily. Thanks to a short temperature cycle period, test results can be obtained in a reasonable test time. A detailed explanation of apparatus such as configuration and control methods for the different functions of accelerated power cycling test setup is given. Then,
an improved in situ junction temperature estimation method using on-state collector–emitter voltage VCE ON and load current is proposed. In addition, a procedure of advanced accelerated power cycling test and test results with 600 V, 30 A transfer molded IGBT modules are presented in order to verify the validity and effectiveness of the proposed apparatus and methodology. Finally, physicsof-failure analysis of tested IGBT modules is provided.
OriginalsprogEngelsk
TidsskriftI E E E Transactions on Power Electronics
Vol/bind31
Udgave nummer12
Sider (fra-til)8371-8386
Antal sider16
ISSN0885-8993
DOI
StatusUdgivet - dec. 2016

Fingeraftryk Dyk ned i forskningsemnerne om 'Advanced Accelerated Power Cycling Test for Reliability Investigation of Power Device Modules'. Sammen danner de et unikt fingeraftryk.

Citationsformater