AlGaN/GaN Heterostructures in High Electron Mobility Transistors

Piotr Caban, Ryan Thorpe, Leonard Feldman, Kjeld Pedersen, Vladimir Popok

Publikation: Bidrag til bog/antologi/rapport/konference proceedingKonferenceartikel i proceedingForskning

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Resumé

AlGaN/GaN heterostructures are of high research and industrial interest for the production of high electron mobility transistors (HEMT) utilizing the two-dimensional electron gas (2DEG) induced at the interface due to polarization effects. In the current work, the effect of AlGaN thickness on 2DEG formation is under discussion. In particular, ultrathin layers of AlGaN (between 2-12 nm thick) are grown on top of GaN. Composition of these layers is studied and variations of surface potential are mapped using Kelvin probe force microscopy (KPFM) to see the evolution of the 2DEG formation in relation to layer thickness and stoichiometry. The obtained results allow concluding about critical thickness of AlGaN layer for the formation of continuous 2DEG at the AlGaN/GaN interface.
OriginalsprogEngelsk
TitelProceedings of VIII International Conference on Materials and Structures of Modern Electronics
RedaktørerV.B. Odzaev
Antal sider4
Udgivelses stedMinsk: BSU
Publikationsdatookt. 2018
Sider5-8
ISBN (Trykt)978-985-566-671-5
StatusUdgivet - okt. 2018
BegivenhedMaterials and Structures of Modern Electronics - , Hviderusland
Varighed: 10 okt. 201812 okt. 2018

Konference

KonferenceMaterials and Structures of Modern Electronics
LandHviderusland
Periode10/10/201812/10/2018

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high electron mobility transistors
electron gas
stoichiometry
microscopy
probes
polarization

Citer dette

Caban, P., Thorpe, R., Feldman, L., Pedersen, K., & Popok, V. (2018). AlGaN/GaN Heterostructures in High Electron Mobility Transistors. I V. B. Odzaev (red.), Proceedings of VIII International Conference on Materials and Structures of Modern Electronics (s. 5-8). Minsk: BSU.
Caban, Piotr ; Thorpe, Ryan ; Feldman, Leonard ; Pedersen, Kjeld ; Popok, Vladimir. / AlGaN/GaN Heterostructures in High Electron Mobility Transistors. Proceedings of VIII International Conference on Materials and Structures of Modern Electronics. red. / V.B. Odzaev. Minsk: BSU, 2018. s. 5-8
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title = "AlGaN/GaN Heterostructures in High Electron Mobility Transistors",
abstract = "AlGaN/GaN heterostructures are of high research and industrial interest for the production of high electron mobility transistors (HEMT) utilizing the two-dimensional electron gas (2DEG) induced at the interface due to polarization effects. In the current work, the effect of AlGaN thickness on 2DEG formation is under discussion. In particular, ultrathin layers of AlGaN (between 2-12 nm thick) are grown on top of GaN. Composition of these layers is studied and variations of surface potential are mapped using Kelvin probe force microscopy (KPFM) to see the evolution of the 2DEG formation in relation to layer thickness and stoichiometry. The obtained results allow concluding about critical thickness of AlGaN layer for the formation of continuous 2DEG at the AlGaN/GaN interface.",
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Caban, P, Thorpe, R, Feldman, L, Pedersen, K & Popok, V 2018, AlGaN/GaN Heterostructures in High Electron Mobility Transistors. i VB Odzaev (red.), Proceedings of VIII International Conference on Materials and Structures of Modern Electronics. Minsk: BSU, s. 5-8, Hviderusland, 10/10/2018.

AlGaN/GaN Heterostructures in High Electron Mobility Transistors. / Caban, Piotr; Thorpe, Ryan; Feldman, Leonard; Pedersen, Kjeld; Popok, Vladimir.

Proceedings of VIII International Conference on Materials and Structures of Modern Electronics. red. / V.B. Odzaev. Minsk: BSU, 2018. s. 5-8.

Publikation: Bidrag til bog/antologi/rapport/konference proceedingKonferenceartikel i proceedingForskning

TY - GEN

T1 - AlGaN/GaN Heterostructures in High Electron Mobility Transistors

AU - Caban, Piotr

AU - Thorpe, Ryan

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AU - Pedersen, Kjeld

AU - Popok, Vladimir

PY - 2018/10

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N2 - AlGaN/GaN heterostructures are of high research and industrial interest for the production of high electron mobility transistors (HEMT) utilizing the two-dimensional electron gas (2DEG) induced at the interface due to polarization effects. In the current work, the effect of AlGaN thickness on 2DEG formation is under discussion. In particular, ultrathin layers of AlGaN (between 2-12 nm thick) are grown on top of GaN. Composition of these layers is studied and variations of surface potential are mapped using Kelvin probe force microscopy (KPFM) to see the evolution of the 2DEG formation in relation to layer thickness and stoichiometry. The obtained results allow concluding about critical thickness of AlGaN layer for the formation of continuous 2DEG at the AlGaN/GaN interface.

AB - AlGaN/GaN heterostructures are of high research and industrial interest for the production of high electron mobility transistors (HEMT) utilizing the two-dimensional electron gas (2DEG) induced at the interface due to polarization effects. In the current work, the effect of AlGaN thickness on 2DEG formation is under discussion. In particular, ultrathin layers of AlGaN (between 2-12 nm thick) are grown on top of GaN. Composition of these layers is studied and variations of surface potential are mapped using Kelvin probe force microscopy (KPFM) to see the evolution of the 2DEG formation in relation to layer thickness and stoichiometry. The obtained results allow concluding about critical thickness of AlGaN layer for the formation of continuous 2DEG at the AlGaN/GaN interface.

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BT - Proceedings of VIII International Conference on Materials and Structures of Modern Electronics

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Caban P, Thorpe R, Feldman L, Pedersen K, Popok V. AlGaN/GaN Heterostructures in High Electron Mobility Transistors. I Odzaev VB, red., Proceedings of VIII International Conference on Materials and Structures of Modern Electronics. Minsk: BSU. 2018. s. 5-8