An Improved Physics-based LTSpice Compact Electro-Thermal Model for a SiC Power MOSFET with Experimental Validation

Md Maksudul Hossain, Lorenzo Ceccarelli, Arman Ur Rashid, Ramchandra Kotecha, H. Alan Mantooth

Publikation: Bidrag til bog/antologi/rapport/konference proceedingKonferenceartikel i proceedingForskningpeer review

1 Citation (Scopus)

Resumé

A compact electro-thermal SiC Power MOSFET model implemented in LTSpice is presented in this paper. A 1200 V, 90A CREE SiC power MOSFET (C2M0025120D) has been used in this work to illustrate the parameter extraction and experimental model validation. The dynamic validation has been shown using a double-pulse test circuit. The convergence has been tested with the 4-switch topology of an inverter and a comparison between MAST, Verilog-A and CREE’s empirical model of the same device has also been presented.
OriginalsprogEngelsk
TitelProceedings of IECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society
Antal sider6
ForlagIEEE
Publikationsdatookt. 2018
Sider1011-1016
ISBN (Trykt)978-1-5090-6685-8
ISBN (Elektronisk)978-1-5090-6684-1
DOI
StatusUdgivet - okt. 2018
Begivenhed44th Annual Conference of the IEEE Industrial Electronics Society - Omni Shoreham Hotel, Washington, USA
Varighed: 21 okt. 201823 okt. 2018
http://www.iecon2018.org/

Konference

Konference44th Annual Conference of the IEEE Industrial Electronics Society
LokationOmni Shoreham Hotel
LandUSA
ByWashington
Periode21/10/201823/10/2018
Internetadresse
NavnProceedings of the Annual Conference of the IEEE Industrial Electronics Society
ISSN1553-572X

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Physics
Computer hardware description languages
Parameter extraction
Switches
Topology
Networks (circuits)
Power MOSFET
Hot Temperature

Citer dette

Hossain, M. M., Ceccarelli, L., Rashid, A. U., Kotecha, R., & Mantooth, H. A. (2018). An Improved Physics-based LTSpice Compact Electro-Thermal Model for a SiC Power MOSFET with Experimental Validation. I Proceedings of IECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society (s. 1011-1016). IEEE. Proceedings of the Annual Conference of the IEEE Industrial Electronics Society https://doi.org/10.1109/IECON.2018.8592522
Hossain, Md Maksudul ; Ceccarelli, Lorenzo ; Rashid, Arman Ur ; Kotecha, Ramchandra ; Mantooth, H. Alan. / An Improved Physics-based LTSpice Compact Electro-Thermal Model for a SiC Power MOSFET with Experimental Validation. Proceedings of IECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society. IEEE, 2018. s. 1011-1016 (Proceedings of the Annual Conference of the IEEE Industrial Electronics Society).
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title = "An Improved Physics-based LTSpice Compact Electro-Thermal Model for a SiC Power MOSFET with Experimental Validation",
abstract = "A compact electro-thermal SiC Power MOSFET model implemented in LTSpice is presented in this paper. A 1200 V, 90A CREE SiC power MOSFET (C2M0025120D) has been used in this work to illustrate the parameter extraction and experimental model validation. The dynamic validation has been shown using a double-pulse test circuit. The convergence has been tested with the 4-switch topology of an inverter and a comparison between MAST, Verilog-A and CREE’s empirical model of the same device has also been presented.",
keywords = "Compact model, electro-thermal model, LTSpice, Saber{\circledR}, SiC MOSFET",
author = "Hossain, {Md Maksudul} and Lorenzo Ceccarelli and Rashid, {Arman Ur} and Ramchandra Kotecha and Mantooth, {H. Alan}",
year = "2018",
month = "10",
doi = "10.1109/IECON.2018.8592522",
language = "English",
isbn = "978-1-5090-6685-8",
pages = "1011--1016",
booktitle = "Proceedings of IECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society",
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Hossain, MM, Ceccarelli, L, Rashid, AU, Kotecha, R & Mantooth, HA 2018, An Improved Physics-based LTSpice Compact Electro-Thermal Model for a SiC Power MOSFET with Experimental Validation. i Proceedings of IECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society. IEEE, Proceedings of the Annual Conference of the IEEE Industrial Electronics Society, s. 1011-1016, Washington, USA, 21/10/2018. https://doi.org/10.1109/IECON.2018.8592522

An Improved Physics-based LTSpice Compact Electro-Thermal Model for a SiC Power MOSFET with Experimental Validation. / Hossain, Md Maksudul; Ceccarelli, Lorenzo; Rashid, Arman Ur; Kotecha, Ramchandra; Mantooth, H. Alan.

Proceedings of IECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society. IEEE, 2018. s. 1011-1016 (Proceedings of the Annual Conference of the IEEE Industrial Electronics Society).

Publikation: Bidrag til bog/antologi/rapport/konference proceedingKonferenceartikel i proceedingForskningpeer review

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T1 - An Improved Physics-based LTSpice Compact Electro-Thermal Model for a SiC Power MOSFET with Experimental Validation

AU - Hossain, Md Maksudul

AU - Ceccarelli, Lorenzo

AU - Rashid, Arman Ur

AU - Kotecha, Ramchandra

AU - Mantooth, H. Alan

PY - 2018/10

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N2 - A compact electro-thermal SiC Power MOSFET model implemented in LTSpice is presented in this paper. A 1200 V, 90A CREE SiC power MOSFET (C2M0025120D) has been used in this work to illustrate the parameter extraction and experimental model validation. The dynamic validation has been shown using a double-pulse test circuit. The convergence has been tested with the 4-switch topology of an inverter and a comparison between MAST, Verilog-A and CREE’s empirical model of the same device has also been presented.

AB - A compact electro-thermal SiC Power MOSFET model implemented in LTSpice is presented in this paper. A 1200 V, 90A CREE SiC power MOSFET (C2M0025120D) has been used in this work to illustrate the parameter extraction and experimental model validation. The dynamic validation has been shown using a double-pulse test circuit. The convergence has been tested with the 4-switch topology of an inverter and a comparison between MAST, Verilog-A and CREE’s empirical model of the same device has also been presented.

KW - Compact model

KW - electro-thermal model

KW - LTSpice

KW - Saber®

KW - SiC MOSFET

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DO - 10.1109/IECON.2018.8592522

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Hossain MM, Ceccarelli L, Rashid AU, Kotecha R, Mantooth HA. An Improved Physics-based LTSpice Compact Electro-Thermal Model for a SiC Power MOSFET with Experimental Validation. I Proceedings of IECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society. IEEE. 2018. s. 1011-1016. (Proceedings of the Annual Conference of the IEEE Industrial Electronics Society). https://doi.org/10.1109/IECON.2018.8592522