An Improved Physics-based LTSpice Compact Electro-Thermal Model for a SiC Power MOSFET with Experimental Validation

Md Maksudul Hossain, Lorenzo Ceccarelli, Arman Ur Rashid, Ramchandra Kotecha, H. Alan Mantooth

Publikation: Bidrag til bog/antologi/rapport/konference proceedingKonferenceartikel i proceedingForskningpeer review

Resumé

A compact electro-thermal SiC Power MOSFET model implemented in LTSpice is presented in this paper. A 1200 V, 90A CREE SiC power MOSFET (C2M0025120D) has been used in this work to illustrate the parameter extraction and experimental model validation. The dynamic validation has been shown using a double-pulse test circuit. The convergence has been tested with the 4-switch topology of an inverter and a comparison between MAST, Verilog-A and CREE’s empirical model of the same device has also been presented.
OriginalsprogEngelsk
TitelProceedings of IECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society
Antal sider6
ForlagIEEE
Publikationsdatookt. 2018
Sider1011-1016
ISBN (Trykt)978-1-5090-6685-8
ISBN (Elektronisk)978-1-5090-6684-1
DOI
StatusUdgivet - okt. 2018
Begivenhed44th Annual Conference of the IEEE Industrial Electronics Society - Omni Shoreham Hotel, Washington, USA
Varighed: 21 okt. 201823 okt. 2018
http://www.iecon2018.org/

Konference

Konference44th Annual Conference of the IEEE Industrial Electronics Society
LokationOmni Shoreham Hotel
LandUSA
ByWashington
Periode21/10/201823/10/2018
Internetadresse
NavnI E E E Industrial Electronics Society. Annual Conference. Proceedings
ISSN1553-572X

Fingeraftryk

Physics
Computer hardware description languages
Parameter extraction
Switches
Topology
Networks (circuits)
Power MOSFET
Hot Temperature

Emneord

    Citer dette

    Hossain, M. M., Ceccarelli, L., Rashid, A. U., Kotecha, R., & Mantooth, H. A. (2018). An Improved Physics-based LTSpice Compact Electro-Thermal Model for a SiC Power MOSFET with Experimental Validation. I Proceedings of IECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society (s. 1011-1016). IEEE. I E E E Industrial Electronics Society. Annual Conference. Proceedings https://doi.org/10.1109/IECON.2018.8592522
    Hossain, Md Maksudul ; Ceccarelli, Lorenzo ; Rashid, Arman Ur ; Kotecha, Ramchandra ; Mantooth, H. Alan. / An Improved Physics-based LTSpice Compact Electro-Thermal Model for a SiC Power MOSFET with Experimental Validation. Proceedings of IECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society. IEEE, 2018. s. 1011-1016 (I E E E Industrial Electronics Society. Annual Conference. Proceedings).
    @inproceedings{2bacc2cdc01240a3a450c9b6afa1a430,
    title = "An Improved Physics-based LTSpice Compact Electro-Thermal Model for a SiC Power MOSFET with Experimental Validation",
    abstract = "A compact electro-thermal SiC Power MOSFET model implemented in LTSpice is presented in this paper. A 1200 V, 90A CREE SiC power MOSFET (C2M0025120D) has been used in this work to illustrate the parameter extraction and experimental model validation. The dynamic validation has been shown using a double-pulse test circuit. The convergence has been tested with the 4-switch topology of an inverter and a comparison between MAST, Verilog-A and CREE’s empirical model of the same device has also been presented.",
    keywords = "Compact model, electro-thermal model, LTSpice, Saber{\circledR}, SiC MOSFET",
    author = "Hossain, {Md Maksudul} and Lorenzo Ceccarelli and Rashid, {Arman Ur} and Ramchandra Kotecha and Mantooth, {H. Alan}",
    year = "2018",
    month = "10",
    doi = "10.1109/IECON.2018.8592522",
    language = "English",
    isbn = "978-1-5090-6685-8",
    pages = "1011--1016",
    booktitle = "Proceedings of IECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society",
    publisher = "IEEE",
    address = "United States",

    }

    Hossain, MM, Ceccarelli, L, Rashid, AU, Kotecha, R & Mantooth, HA 2018, An Improved Physics-based LTSpice Compact Electro-Thermal Model for a SiC Power MOSFET with Experimental Validation. i Proceedings of IECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society. IEEE, I E E E Industrial Electronics Society. Annual Conference. Proceedings, s. 1011-1016, Washington, USA, 21/10/2018. https://doi.org/10.1109/IECON.2018.8592522

    An Improved Physics-based LTSpice Compact Electro-Thermal Model for a SiC Power MOSFET with Experimental Validation. / Hossain, Md Maksudul; Ceccarelli, Lorenzo; Rashid, Arman Ur; Kotecha, Ramchandra; Mantooth, H. Alan.

    Proceedings of IECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society. IEEE, 2018. s. 1011-1016.

    Publikation: Bidrag til bog/antologi/rapport/konference proceedingKonferenceartikel i proceedingForskningpeer review

    TY - GEN

    T1 - An Improved Physics-based LTSpice Compact Electro-Thermal Model for a SiC Power MOSFET with Experimental Validation

    AU - Hossain, Md Maksudul

    AU - Ceccarelli, Lorenzo

    AU - Rashid, Arman Ur

    AU - Kotecha, Ramchandra

    AU - Mantooth, H. Alan

    PY - 2018/10

    Y1 - 2018/10

    N2 - A compact electro-thermal SiC Power MOSFET model implemented in LTSpice is presented in this paper. A 1200 V, 90A CREE SiC power MOSFET (C2M0025120D) has been used in this work to illustrate the parameter extraction and experimental model validation. The dynamic validation has been shown using a double-pulse test circuit. The convergence has been tested with the 4-switch topology of an inverter and a comparison between MAST, Verilog-A and CREE’s empirical model of the same device has also been presented.

    AB - A compact electro-thermal SiC Power MOSFET model implemented in LTSpice is presented in this paper. A 1200 V, 90A CREE SiC power MOSFET (C2M0025120D) has been used in this work to illustrate the parameter extraction and experimental model validation. The dynamic validation has been shown using a double-pulse test circuit. The convergence has been tested with the 4-switch topology of an inverter and a comparison between MAST, Verilog-A and CREE’s empirical model of the same device has also been presented.

    KW - Compact model

    KW - electro-thermal model

    KW - LTSpice

    KW - Saber®

    KW - SiC MOSFET

    U2 - 10.1109/IECON.2018.8592522

    DO - 10.1109/IECON.2018.8592522

    M3 - Article in proceeding

    SN - 978-1-5090-6685-8

    SP - 1011

    EP - 1016

    BT - Proceedings of IECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society

    PB - IEEE

    ER -

    Hossain MM, Ceccarelli L, Rashid AU, Kotecha R, Mantooth HA. An Improved Physics-based LTSpice Compact Electro-Thermal Model for a SiC Power MOSFET with Experimental Validation. I Proceedings of IECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society. IEEE. 2018. s. 1011-1016. (I E E E Industrial Electronics Society. Annual Conference. Proceedings). https://doi.org/10.1109/IECON.2018.8592522