Analysis of Class-DE PA Using MOSFET Devices With Non-Equally Grading Coefficient

A. Lotfi, A. Katsuki, F. Kurokawa, H. Sekiya, M. K. Kazimierczuk, Frede Blaabjerg

Publikation: Bidrag til tidsskriftTidsskriftartikelForskningpeer review

3 Citationer (Scopus)
205 Downloads (Pure)

Abstract

The design and analysis of a new operation-mode of the class-DE power amplifier (PA) using two MOSFETs with the non-equal grading coefficient is introduced. The PA uses the optimum shunt capacitance for each MOSFET to achieve zero voltage switching (ZVS) condition and wide range for the load-resistance point of view. As compared with the conventional class-DE PA, this configuration has low value of the series inductance that is reduced the power dissipation. A design procedure with intuitive curves is obtained that are implemented using a different grading coefficient for two MOSFETs. These criteria prepared an effective approach regardless of the fixed shunt capacitance for achieving ZVS condition. The desired operation of the class-DE PA is guaranteed by converging of design parameters and required output power. Moreover, non-similar switches provide reduced switch power dissipations and the number of the driving circuit PA. The simulation and experiment results are approved by implementing the outlined theoretical relationships for a fabricated class-DE PA at 4-MHz switching frequency and obtained 12.1-W output power.

OriginalsprogEngelsk
Artikelnummer8661763
TidsskriftI E E E Transactions on Circuits and Systems Part 1: Regular Papers
Vol/bind66
Udgave nummer7
Sider (fra-til)2794-2802
Antal sider9
ISSN1549-8328
DOI
StatusUdgivet - jul. 2019

Emneord

  • MOSFET
  • power amplifiers
  • switching convertors
  • zero voltage switching
  • grading coefficient
  • ZVS condition
  • conventional class-DE PA
  • fabricated class-DE PA
  • driving circuit PA
  • switch power dissipations
  • nonsimilar switches
  • required output power
  • fixed shunt capacitance
  • design procedure
  • power dissipation
  • optimum shunt capacitance
  • nonequal grading coefficient
  • class-DE power amplifier
  • MOSFET devices
  • Switches
  • Zero voltage switching
  • Power dissipation
  • Junctions
  • Parasitic capacitance
  • Class-DE power amplifier
  • switch stress
  • zero voltage switching (ZVS)
  • zero-derivative switching (ZDS)
  • loaded-quality factor
  • high efficiency
  • load-resistance

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