Analysis of Miller Region Sustained Oscillations during Turn-on of High-Side 10kV SiC MOSFET

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Abstract

Sustained Miller region oscillations are observed during turn-on of the high-side SiC MOSFET in a half-bridge 10kV power module during high-side double pulse testing at 6kV, 70A. The oscillations are analyzed and the cause is identified as a positive feedback loop forming between the common source inductance and the equivalent high-side Miller capacitance, with a current path through the parasitic power module capacitive couplings of the grounded baseplate. Using custom manufactured and prototype medium voltage power modules the cause is experimentally validated and a mitigation strategy is proposed, demonstrating complete elimination of the sustained oscillations.
OriginalsprogEngelsk
Titel2023 25th European Conference on Power Electronics and Applications, EPE 2023 ECCE Europe
Antal sider8
ForlagIEEE
Publikationsdato4 sep. 2023
Artikelnummer10264475
ISBN (Trykt)979-8-3503-1678-0
ISBN (Elektronisk)978-9-0758-1541-2
DOI
StatusUdgivet - 4 sep. 2023
Begivenhed2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe) - Aalborg, Danmark
Varighed: 4 sep. 20238 sep. 2023

Konference

Konference2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe)
Land/OmrådeDanmark
ByAalborg
Periode04/09/202308/09/2023

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