Analysis of Miller Region Sustained Oscillations during Turn-on of High-Side 10kV SiC MOSFET

Benjamin Futtrup Kjærsgaard; Asger Bjørn Jørgensen; Thore Stig Aunsborg; Jannick Kjær Jørgensen; Gao Liu; Hongbo Zhao; Stig Munk-Nielsen; Bjørn Rannestad

doi:10.23919/EPE23ECCEEurope58414.2023.10264475

Analysis of Miller Region Sustained Oscillations during Turn-on of High-Side 10kV SiC MOSFET

Benjamin Futtrup Kjærsgaard^*, Asger Bjørn Jørgensen, Thore Stig Aunsborg, Jannick Kjær Jørgensen, Gao Liu, Hongbo Zhao, Stig Munk-Nielsen, Bjørn Rannestad

^*Kontaktforfatter

Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

3 Citationer (Scopus)

280 Downloads (Pure)

Abstract

Sustained Miller region oscillations are observed during turn-on of the high-side SiC MOSFET in a half-bridge 10kV power module during high-side double pulse testing at 6kV, 70A. The oscillations are analyzed and the cause is identified as a positive feedback loop forming between the common source inductance and the equivalent high-side Miller capacitance, with a current path through the parasitic power module capacitive couplings of the grounded baseplate. Using custom manufactured and prototype medium voltage power modules the cause is experimentally validated and a mitigation strategy is proposed, demonstrating complete elimination of the sustained oscillations.

Originalsprog	Engelsk
Titel	2023 25th European Conference on Power Electronics and Applications, EPE 2023 ECCE Europe
Antal sider	8
Forlag	IEEE (Institute of Electrical and Electronics Engineers)
Publikationsdato	4 sep. 2023
Artikelnummer	10264475
ISBN (Trykt)	979-8-3503-1678-0
ISBN (Elektronisk)	978-9-0758-1541-2
DOI	https://doi.org/10.23919/EPE23ECCEEurope58414.2023.10264475
Status	Udgivet - 4 sep. 2023
Begivenhed	2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe) - Aalborg, Danmark Varighed: 4 sep. 2023 → 8 sep. 2023

Konference

Konference	2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe)
Land/Område	Danmark
By	Aalborg
Periode	04/09/2023 → 08/09/2023

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10.23919/EPE23ECCEEurope58414.2023.10264475

Analysis_of_Miller_Region_Sustained_Oscillations_during_Turn-on_of_High-Side_10kV_SiC_MOSFETAccepteret manuskript, 3,78 MB

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Link to publication in Scopus

Parasitic Capacitive and Inductive Effects in High Power Silicon Carbide enabled Power Electronics Converter Systems
Kjærsgaard, B. F. (PI (principal investigator)), Munk-Nielsen, S. (Supervisor) & Zhao, H. (Supervisor)
01/08/2021 → 31/07/2024
Projekter: Projekt › Ph.d.-projekt
MVolt: Medium Voltage Power Electronics for Wind Systems
Munk-Nielsen, S. (PI (principal investigator)), Uhrenfeldt, C. (CoI (co-investigator)), Jørgensen, A. B. (CoI (co-investigator)), Jørgensen, J. K. (CoI (co-investigator)), Beczkowski, S. (Projektdeltager), Bech, M. M. (Projektdeltager), Spender-Andersen, G. (Projektdeltager), Lascu, C. (Projektdeltager), Zhao, H. (Projektdeltager), Dalal, D. N. (Projektdeltager), Kjærsgaard, B. F. (Projektdeltager), Aunsborg, T. S. (Projektdeltager), Jacobsen, J. (Projektdeltager), Mishra, P. (Projektdeltager) & Steffensen, B. (Projektkoordinator)
Innovationsfonden
01/10/2020 → 30/09/2024
Projekter: Projekt › Forskning

Citationsformater

Kjærsgaard, B. F., Jørgensen, A. B., Aunsborg, T. S., Jørgensen, J. K., Liu, G., Zhao, H., Munk-Nielsen, S., & Rannestad, B. (2023). Analysis of Miller Region Sustained Oscillations during Turn-on of High-Side 10kV SiC MOSFET. I 2023 25th European Conference on Power Electronics and Applications, EPE 2023 ECCE Europe Artikel 10264475 IEEE (Institute of Electrical and Electronics Engineers). https://doi.org/10.23919/EPE23ECCEEurope58414.2023.10264475

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title = "Analysis of Miller Region Sustained Oscillations during Turn-on of High-Side 10kV SiC MOSFET",

abstract = "Sustained Miller region oscillations are observed during turn-on of the high-side SiC MOSFET in a half-bridge 10kV power module during high-side double pulse testing at 6kV, 70A. The oscillations are analyzed and the cause is identified as a positive feedback loop forming between the common source inductance and the equivalent high-side Miller capacitance, with a current path through the parasitic power module capacitive couplings of the grounded baseplate. Using custom manufactured and prototype medium voltage power modules the cause is experimentally validated and a mitigation strategy is proposed, demonstrating complete elimination of the sustained oscillations.",

keywords = "Capacitive coupling, Double pulse test, Medium voltage, Packaging, Parasitic inductance, SiC oscillation",

author = "Kj{\ae}rsgaard, {Benjamin Futtrup} and J{\o}rgensen, {Asger Bj{\o}rn} and Aunsborg, {Thore Stig} and J{\o}rgensen, {Jannick Kj{\ae}r} and Gao Liu and Hongbo Zhao and Stig Munk-Nielsen and Bj{\o}rn Rannestad",

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month = sep,

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doi = "10.23919/EPE23ECCEEurope58414.2023.10264475",

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note = "2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe) ; Conference date: 04-09-2023 Through 08-09-2023",

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Kjærsgaard, BF , Jørgensen, AB , Aunsborg, TS , Jørgensen, JK , Liu, G , Zhao, H , Munk-Nielsen, S & Rannestad, B 2023, Analysis of Miller Region Sustained Oscillations during Turn-on of High-Side 10kV SiC MOSFET. i 2023 25th European Conference on Power Electronics and Applications, EPE 2023 ECCE Europe., 10264475, IEEE (Institute of Electrical and Electronics Engineers), 2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe), Aalborg, Danmark, 04/09/2023. https://doi.org/10.23919/EPE23ECCEEurope58414.2023.10264475

Analysis of Miller Region Sustained Oscillations during Turn-on of High-Side 10kV SiC MOSFET. / Kjærsgaard, Benjamin Futtrup ; Jørgensen, Asger Bjørn ; Aunsborg, Thore Stig et al.
2023 25th European Conference on Power Electronics and Applications, EPE 2023 ECCE Europe. IEEE (Institute of Electrical and Electronics Engineers), 2023. 10264475.

Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

TY - GEN

T1 - Analysis of Miller Region Sustained Oscillations during Turn-on of High-Side 10kV SiC MOSFET

AU - Kjærsgaard, Benjamin Futtrup

AU - Jørgensen, Asger Bjørn

AU - Aunsborg, Thore Stig

AU - Jørgensen, Jannick Kjær

AU - Liu, Gao

AU - Zhao, Hongbo

AU - Munk-Nielsen, Stig

AU - Rannestad, Bjørn

PY - 2023/9/4

Y1 - 2023/9/4

N2 - Sustained Miller region oscillations are observed during turn-on of the high-side SiC MOSFET in a half-bridge 10kV power module during high-side double pulse testing at 6kV, 70A. The oscillations are analyzed and the cause is identified as a positive feedback loop forming between the common source inductance and the equivalent high-side Miller capacitance, with a current path through the parasitic power module capacitive couplings of the grounded baseplate. Using custom manufactured and prototype medium voltage power modules the cause is experimentally validated and a mitigation strategy is proposed, demonstrating complete elimination of the sustained oscillations.

AB - Sustained Miller region oscillations are observed during turn-on of the high-side SiC MOSFET in a half-bridge 10kV power module during high-side double pulse testing at 6kV, 70A. The oscillations are analyzed and the cause is identified as a positive feedback loop forming between the common source inductance and the equivalent high-side Miller capacitance, with a current path through the parasitic power module capacitive couplings of the grounded baseplate. Using custom manufactured and prototype medium voltage power modules the cause is experimentally validated and a mitigation strategy is proposed, demonstrating complete elimination of the sustained oscillations.

KW - Capacitive coupling

KW - Double pulse test

KW - Medium voltage

KW - Packaging

KW - Parasitic inductance

KW - SiC oscillation

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U2 - 10.23919/EPE23ECCEEurope58414.2023.10264475

DO - 10.23919/EPE23ECCEEurope58414.2023.10264475

M3 - Article in proceeding

SN - 979-8-3503-1678-0

BT - 2023 25th European Conference on Power Electronics and Applications, EPE 2023 ECCE Europe

PB - IEEE (Institute of Electrical and Electronics Engineers)

T2 - 2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe)

Y2 - 4 September 2023 through 8 September 2023

ER -

Kjærsgaard BF , Jørgensen AB , Aunsborg TS , Jørgensen JK , Liu G , Zhao H et al. Analysis of Miller Region Sustained Oscillations during Turn-on of High-Side 10kV SiC MOSFET. I 2023 25th European Conference on Power Electronics and Applications, EPE 2023 ECCE Europe. IEEE (Institute of Electrical and Electronics Engineers). 2023. 10264475 doi: 10.23919/EPE23ECCEEurope58414.2023.10264475

Analysis of Miller Region Sustained Oscillations during Turn-on of High-Side 10kV SiC MOSFET

Abstract

Konference

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Projekter

Parasitic Capacitive and Inductive Effects in High Power Silicon Carbide enabled Power Electronics Converter Systems

MVolt: Medium Voltage Power Electronics for Wind Systems

Citationsformater