Analytical Study of the Fading Memory Phenomenon in a TaOx Memristor Model

I. Messaris; A. Ascoli; A. S. Demirkol; V. Ntinas; R. Tetzlaff

doi:10.1109/ICECS202256217.2022.9970855

Analytical Study of the Fading Memory Phenomenon in a TaO_x Memristor Model

I. Messaris
, A. Ascoli
, A. S. Demirkol
, V. Ntinas
, R. Tetzlaff

Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

1 Citationer (Scopus)

Abstract

This paper presents a theoretical study of the fading memory phenomenon in a TaOx-based memristor, manufactured and modeled at Hewlett-Packard Labs. Specifically, we derive a set of equations that can be used to characterize its steady-state response to a high-frequency zero-mean periodic square-wave voltage stimulus. Our results reveal a hidden property of the Dynamic Route Map (DRM) system-theoretic analysis tool, i.e. its capability to predict accurately the mean value of the state variable oscillation in first-order non-volatile memristors, at steady-state, as a function of the input amplitude alone. This DRM property may be useful in real-world memristor-based applications, where voltage pulses are most often employed to modulate the states of practical memristor devices.

Originalsprog	Engelsk
Titel	ICECS 2022 - 29th IEEE International Conference on Electronics, Circuits and Systems, Proceedings
Forlag	IEEE Signal Processing Society
Publikationsdato	2022
ISBN (Elektronisk)	9781665488235
DOI	https://doi.org/10.1109/ICECS202256217.2022.9970855
Status	Udgivet - 2022
Udgivet eksternt	Ja
Begivenhed	29th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2022 - Glasgow, Storbritannien Varighed: 24 okt. 2022 → 26 okt. 2022

Konference

Konference	29th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2022
Land/Område	Storbritannien
By	Glasgow
Periode	24/10/2022 → 26/10/2022
Sponsor	Cadence, EPSRC, IEEE, IEEE Circuits and Systems Society (CAS), Wiley

Navn	ICECS 2022 - 29th IEEE International Conference on Electronics, Circuits and Systems, Proceedings

Bibliografisk note

Publisher Copyright:
© 2022 IEEE.

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10.1109/ICECS202256217.2022.9970855

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Citationsformater

@inproceedings{ef3463a8b7c04b8dac24a13a1d20569f,

title = "Analytical Study of the Fading Memory Phenomenon in a TaOx Memristor Model",

abstract = "This paper presents a theoretical study of the fading memory phenomenon in a TaOx-based memristor, manufactured and modeled at Hewlett-Packard Labs. Specifically, we derive a set of equations that can be used to characterize its steady-state response to a high-frequency zero-mean periodic square-wave voltage stimulus. Our results reveal a hidden property of the Dynamic Route Map (DRM) system-theoretic analysis tool, i.e. its capability to predict accurately the mean value of the state variable oscillation in first-order non-volatile memristors, at steady-state, as a function of the input amplitude alone. This DRM property may be useful in real-world memristor-based applications, where voltage pulses are most often employed to modulate the states of practical memristor devices.",

author = "I. Messaris and A. Ascoli and Demirkol, \{A. S.\} and V. Ntinas and R. Tetzlaff",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 29th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2022 ; Conference date: 24-10-2022 Through 26-10-2022",

year = "2022",

doi = "10.1109/ICECS202256217.2022.9970855",

language = "English",

series = "ICECS 2022 - 29th IEEE International Conference on Electronics, Circuits and Systems, Proceedings",

booktitle = "ICECS 2022 - 29th IEEE International Conference on Electronics, Circuits and Systems, Proceedings",

publisher = "IEEE Signal Processing Society",

address = "United States",

}

Messaris, I, Ascoli, A, Demirkol, AS, Ntinas, V & Tetzlaff, R 2022, Analytical Study of the Fading Memory Phenomenon in a TaO_x Memristor Model. i ICECS 2022 - 29th IEEE International Conference on Electronics, Circuits and Systems, Proceedings. IEEE Signal Processing Society, ICECS 2022 - 29th IEEE International Conference on Electronics, Circuits and Systems, Proceedings, 29th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2022, Glasgow, Storbritannien, 24/10/2022. https://doi.org/10.1109/ICECS202256217.2022.9970855

Analytical Study of the Fading Memory Phenomenon in a TaO_x Memristor Model. / Messaris, I.; Ascoli, A.; Demirkol, A. S. et al.
ICECS 2022 - 29th IEEE International Conference on Electronics, Circuits and Systems, Proceedings. IEEE Signal Processing Society, 2022. (ICECS 2022 - 29th IEEE International Conference on Electronics, Circuits and Systems, Proceedings).

Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

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AU - Ntinas, V.

AU - Tetzlaff, R.

PY - 2022

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AB - This paper presents a theoretical study of the fading memory phenomenon in a TaOx-based memristor, manufactured and modeled at Hewlett-Packard Labs. Specifically, we derive a set of equations that can be used to characterize its steady-state response to a high-frequency zero-mean periodic square-wave voltage stimulus. Our results reveal a hidden property of the Dynamic Route Map (DRM) system-theoretic analysis tool, i.e. its capability to predict accurately the mean value of the state variable oscillation in first-order non-volatile memristors, at steady-state, as a function of the input amplitude alone. This DRM property may be useful in real-world memristor-based applications, where voltage pulses are most often employed to modulate the states of practical memristor devices.

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Messaris I, Ascoli A, Demirkol AS, Ntinas V, Tetzlaff R. Analytical Study of the Fading Memory Phenomenon in a TaO_x Memristor Model. I ICECS 2022 - 29th IEEE International Conference on Electronics, Circuits and Systems, Proceedings. IEEE Signal Processing Society. 2022. (ICECS 2022 - 29th IEEE International Conference on Electronics, Circuits and Systems, Proceedings). doi: 10.1109/ICECS202256217.2022.9970855