Behavioral Modeling of Ground Current in Filter Inductors of Medium-Voltage SiC-MOSFET-Based Converters

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2 Citationer (Scopus)

Abstrakt

This paper analyzes the phenomenon of ground current in the filter inductors (with a grounded core/frame) of medium-voltage (MV) SiC-MOSFET-based. The inductor ground current is generated during the switching transients, due to the capacitive coupling between the winding and the core/frame. A general three-terminal equivalent circuit is proposed for representing the capacitive couplings of the filter inductors, which allows the extraction of equivalent admittances between the terminals by using the system identification tool, and thus the ground current can be accurately simulated in the frequency range of concern (up to 100 MHz in this paper). The simulated ground current based on the behavioral model match closely with the experimental results measured in a medium voltage SiC MOSFET based double-pulse test.
OriginalsprogEngelsk
TitelProceedings of 2020 IEEE Applied Power Electronics Conference and Exposition (APEC)
Antal sider7
ForlagIEEE Press
Publikationsdatojun. 2020
Sider1972-1978
Artikelnummer9124147
ISBN (Elektronisk)9781728148298
DOI
StatusUdgivet - jun. 2020
Begivenhed2020 IEEE Applied Power Electronics Conference and Exposition (APEC) - New Orleans, LA, USA
Varighed: 15 mar. 202019 mar. 2020

Konference

Konference2020 IEEE Applied Power Electronics Conference and Exposition (APEC)
LandUSA
ByNew Orleans, LA
Periode15/03/202019/03/2020
NavnIEEE Applied Power Electronics Conference and Exposition (APEC)
ISSN1048-2334

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