Characterisation of 10 kV 10 A SiC MOSFET

Emanuel-Petre Eni, Bogdan Ioan Incau, Stig Munk-Nielsen, Tamas Kerekes, Remus Teodorescu

Publikation: Bidrag til bog/antologi/rapport/konference proceedingKonferenceartikel i proceedingForskningpeer review

5 Citationer (Scopus)

Abstrakt

The objective of this paper is to characterize and evaluate the static and dynamic performances of 10 kV 10 A 4H-SIC MOSFETs at high temperatures. The results show good electrical performances of the SiC MOSFETs for high temperature operations. The double-pulse test results showed interesting behavior at elevated temperatures, where at turn-on the switching speeds become faster, thus turn-on losses become smaller, and opposite at turn-off.
OriginalsprogEngelsk
TitelProceedings of 2015 Intl Aegean Conference on Electrical Machines & Power Electronics (ACEMP), 2015 Intl Conference on Optimization of Electrical & Electronic Equipment (OPTIM) & 2015 Intl Symposium on Advanced Electromechanical Motion Systems (ELECTROMOTION)
ForlagIEEE
Publikationsdato2015
Sider675-680
ISBN (Trykt)978-1-4673-7239-8
DOI
StatusUdgivet - 2015
Begivenhed2015 International Aegean Conference on Electrical machines and Power Electronics ACEMPOPTIM- ELECTROMOTION Joint Conference - Side, Side, Tyrkiet
Varighed: 2 sep. 20154 sep. 2015
Konferencens nummer: 1
http://www.acemp-metu.com/Pages/Home

Konference

Konference2015 International Aegean Conference on Electrical machines and Power Electronics ACEMPOPTIM- ELECTROMOTION Joint Conference
Nummer1
LokationSide
Land/OmrådeTyrkiet
BySide
Periode02/09/201504/09/2015
Internetadresse

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