Cluster Deposition and Implantation on/in Graphite

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    Abstrakt

    Cluster ion beam technique is a versatile tool which can be used for controllable formation of nanosize objects on the surface, modification and processing of surfaces and shallow layers on an atomic scale. In this chapter an overview of research on cluster interaction with graphite is presented. One of the emphases is put on pinning of metal clusters on graphite with a possibility of following selective etching of graphene layers. The other topic of concern is related to the phenomenon of cluster stopping and the development of scaling law for cluster implantation in graphite. Graphite is chosen for surface experiments because it is a good model material; it has an atomically smooth surface that makes it easy to resolve very small deposited clusters or damaged areas. Layered structure of graphite with strong covalent bonds in the graphene sheets and very week van der Waals interactions between them is an interesting type of crystalline arrangement for modelling of clusters implantation. Additionally, there is rapidly increasing research activities on graphene which promises a number of applications in nanoelectronics, plasmonics, sensing etc. Thus, understanding of particle behaviour on soft landing or pinning on graphene is of considerable practical importance.
    OriginalsprogEngelsk
    TitelGraphite: Properties, Occurrences and Uses
    RedaktørerQuinton C. Campbell
    ForlagNova Science Publishers
    Publikationsdato2013
    Sider279-298
    Kapitel8
    ISBN (Trykt)978-1-62618-576-0
    ISBN (Elektronisk) 978-1-62618-577-7
    StatusUdgivet - 2013

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