Common mode current mitigation for medium voltage half bridge SiC modules

Nicklas Christensen; Asger Bjørn Jørgensen; Dipen Narendra Dalal; Simon Dyhr Sønderskov; Szymon Beczkowski; Christian Uhrenfeldt; Stig Munk-Nielsen

doi:10.23919/EPE17ECCEEurope.2017.8099202

Common mode current mitigation for medium voltage half bridge SiC modules

Nicklas Christensen, Asger Bjørn Jørgensen, Dipen Narendra Dalal, Simon Dyhr Sønderskov, Szymon Beczkowski, Christian Uhrenfeldt, Stig Munk-Nielsen

Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

29 Citationer (Scopus)

302 Downloads (Pure)

Abstract

Medium voltage 10 kV Silicon Carbide MOSFETs, introduce challenges regarding converter design. Very high rate of voltage change and capacitive couplings to for example cooling systems cause increased electromagnetic interference. The aim of this paper is to accurately model the capacitive coupling to a heat sink and experimentally validate the model. An analytic model of the heat sink is developed which is demonstrated to be in excellent agreement with experimental results. The experimental result validates the modelled heat sink network allowing engineers to choose a suitable grounding impedance to comply with the electromagnetic compatibility regulations.

Originalsprog	Engelsk
Titel	Proceedings of 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)
Antal sider	8
Forlag	IEEE Press
Publikationsdato	sep. 2017
ISBN (Elektronisk)	978-90-75815-27-6
DOI	https://doi.org/10.23919/EPE17ECCEEurope.2017.8099202
Status	Udgivet - sep. 2017
Begivenhed	2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe) - Warsaw, Polen Varighed: 11 sep. 2017 → 14 sep. 2017

Konference

Konference	2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)
Land/Område	Polen
By	Warsaw
Periode	11/09/2017 → 14/09/2017

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10.23919/EPE17ECCEEurope.2017.8099202

commonmodemitigation_preprintAccepteret manuskript, 1,24 MB

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Christensen, N., Jørgensen, A. B., Dalal, D. N., Sønderskov, S. D., Beczkowski, S., Uhrenfeldt, C., & Munk-Nielsen, S. (2017). Common mode current mitigation for medium voltage half bridge SiC modules. I Proceedings of 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe) IEEE Press. https://doi.org/10.23919/EPE17ECCEEurope.2017.8099202

@inproceedings{5563237c41d846079e7322326505fd97,

title = "Common mode current mitigation for medium voltage half bridge SiC modules",

abstract = "Medium voltage 10 kV Silicon Carbide MOSFETs, introduce challenges regarding converter design. Very high rate of voltage change and capacitive couplings to for example cooling systems cause increased electromagnetic interference. The aim of this paper is to accurately model the capacitive coupling to a heat sink and experimentally validate the model. An analytic model of the heat sink is developed which is demonstrated to be in excellent agreement with experimental results. The experimental result validates the modelled heat sink network allowing engineers to choose a suitable grounding impedance to comply with the electromagnetic compatibility regulations.",

keywords = "Wide bandgap devices, Silicon Carbide (SiC), EMC/EMI, Noise, New switching devices",

author = "Nicklas Christensen and J{\o}rgensen, {Asger Bj{\o}rn} and Dalal, {Dipen Narendra} and S{\o}nderskov, {Simon Dyhr} and Szymon Beczkowski and Christian Uhrenfeldt and Stig Munk-Nielsen",

year = "2017",

month = sep,

doi = "10.23919/EPE17ECCEEurope.2017.8099202",

language = "English",

booktitle = "Proceedings of 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)",

publisher = "IEEE Press",

note = "2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe) ; Conference date: 11-09-2017 Through 14-09-2017",

}

Christensen, N, Jørgensen, AB, Dalal, DN, Sønderskov, SD, Beczkowski, S, Uhrenfeldt, C & Munk-Nielsen, S 2017, Common mode current mitigation for medium voltage half bridge SiC modules. i Proceedings of 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe). IEEE Press, 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe), Warsaw, Polen, 11/09/2017. https://doi.org/10.23919/EPE17ECCEEurope.2017.8099202

Common mode current mitigation for medium voltage half bridge SiC modules. / Christensen, Nicklas; Jørgensen, Asger Bjørn; Dalal, Dipen Narendra et al.
Proceedings of 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe). IEEE Press, 2017.

Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

TY - GEN

T1 - Common mode current mitigation for medium voltage half bridge SiC modules

AU - Christensen, Nicklas

AU - Jørgensen, Asger Bjørn

AU - Dalal, Dipen Narendra

AU - Sønderskov, Simon Dyhr

AU - Beczkowski, Szymon

AU - Uhrenfeldt, Christian

AU - Munk-Nielsen, Stig

PY - 2017/9

Y1 - 2017/9

N2 - Medium voltage 10 kV Silicon Carbide MOSFETs, introduce challenges regarding converter design. Very high rate of voltage change and capacitive couplings to for example cooling systems cause increased electromagnetic interference. The aim of this paper is to accurately model the capacitive coupling to a heat sink and experimentally validate the model. An analytic model of the heat sink is developed which is demonstrated to be in excellent agreement with experimental results. The experimental result validates the modelled heat sink network allowing engineers to choose a suitable grounding impedance to comply with the electromagnetic compatibility regulations.

AB - Medium voltage 10 kV Silicon Carbide MOSFETs, introduce challenges regarding converter design. Very high rate of voltage change and capacitive couplings to for example cooling systems cause increased electromagnetic interference. The aim of this paper is to accurately model the capacitive coupling to a heat sink and experimentally validate the model. An analytic model of the heat sink is developed which is demonstrated to be in excellent agreement with experimental results. The experimental result validates the modelled heat sink network allowing engineers to choose a suitable grounding impedance to comply with the electromagnetic compatibility regulations.

KW - Wide bandgap devices

KW - Silicon Carbide (SiC)

KW - EMC/EMI

KW - Noise

KW - New switching devices

U2 - 10.23919/EPE17ECCEEurope.2017.8099202

DO - 10.23919/EPE17ECCEEurope.2017.8099202

M3 - Article in proceeding

BT - Proceedings of 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)

PB - IEEE Press

T2 - 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)

Y2 - 11 September 2017 through 14 September 2017

ER -

Common mode current mitigation for medium voltage half bridge SiC modules

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