Comparative study of Al metallization degradation in power diodes under passive and active thermal cycling

Mads Brincker, Kristian Bonderup Pedersen, Peter Kjær Kristensen, Vladimir Popok

Publikation: Bidrag til tidsskriftTidsskriftartikelForskningpeer review

1 Citation (Scopus)
101 Downloads (Pure)

Resumé

Degradation of Al metallization on Si-based semiconductor
chips under operation is a reliability problem known
for many years but the mechanisms of this phenomenon are not
fully understood. To quantify contributions of different possible
effects, a passive thermal cycling setup has been developed
allowing for accelerated tests by varying the device temperature
on a short time scale without applying electrical power. The
setup is also capable of testing devices in different atmospheres.
The results obtained by the thermal tests of diode chips are
compared to those from power cycled diodes with focus on
degradation of the top metallization layer. The data on structural
and electrical characterization of the samples show that the
passive thermal cycling induces metallization degradation very
similar to that found for the power cycled devices. Thus, it can be
concluded that the thermal-induced stresses are the dominating
mechanisms for the metallization fatigue and following failure.
The role of oxidation and corrosion effects is also studied
in the experiments on passive thermal cycling using different
environmental conditions. It is suggested that the formation
of self-passivating aluminum oxide under ordinary atmospheric
conditions can play a positive role in limiting the structural, and
electrical degradation of the metallization layers. The obtained
results represent a considerable contribution into understanding
of major failure mechanisms related to metallization fatigue and
reconstruction.
OriginalsprogEngelsk
Artikelnummer8506441
TidsskriftIEEE Transactions on Components, Packaging and Manufacturing Technology
Vol/bind8
Udgave nummer12
Sider (fra-til)2073-2080
Antal sider8
ISSN2156-3950
DOI
StatusUdgivet - 26 okt. 2018

Fingerprint

Thermal cycling
Metallizing
Degradation
Fatigue of materials
Aluminum Oxide
Diodes
Corrosion
Aluminum
Oxidation
Oxides
Testing
Experiments

Citer dette

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abstract = "Degradation of Al metallization on Si-based semiconductorchips under operation is a reliability problem knownfor many years but the mechanisms of this phenomenon are notfully understood. To quantify contributions of different possibleeffects, a passive thermal cycling setup has been developedallowing for accelerated tests by varying the device temperatureon a short time scale without applying electrical power. Thesetup is also capable of testing devices in different atmospheres.The results obtained by the thermal tests of diode chips arecompared to those from power cycled diodes with focus ondegradation of the top metallization layer. The data on structuraland electrical characterization of the samples show that thepassive thermal cycling induces metallization degradation verysimilar to that found for the power cycled devices. Thus, it can beconcluded that the thermal-induced stresses are the dominatingmechanisms for the metallization fatigue and following failure.The role of oxidation and corrosion effects is also studiedin the experiments on passive thermal cycling using differentenvironmental conditions. It is suggested that the formationof self-passivating aluminum oxide under ordinary atmosphericconditions can play a positive role in limiting the structural, andelectrical degradation of the metallization layers. The obtainedresults represent a considerable contribution into understandingof major failure mechanisms related to metallization fatigue andreconstruction.",
keywords = "Semiconductor device metallization, semiconductor device reliability, environmental factors, power semiconductor devices",
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Comparative study of Al metallization degradation in power diodes under passive and active thermal cycling. / Brincker, Mads; Pedersen, Kristian Bonderup; Kristensen, Peter Kjær; Popok, Vladimir.

I: IEEE Transactions on Components, Packaging and Manufacturing Technology, Bind 8, Nr. 12, 8506441, 26.10.2018, s. 2073-2080.

Publikation: Bidrag til tidsskriftTidsskriftartikelForskningpeer review

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