Comparison of Press-Pack and Wire-Bonding Technologies for SiC MOSFETs under Short-Circuit Conditions

Ran Yao; Francesco Iannuzzo; Amir Sajjad Bahman; Hui Li

doi:10.23919/EPE20ECCEEurope43536.2020.9215875

Comparison of Press-Pack and Wire-Bonding Technologies for SiC MOSFETs under Short-Circuit Conditions

Ran Yao, Francesco Iannuzzo, Amir Sajjad Bahman, Hui Li

Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

2 Citationer (Scopus)

Abstract

This paper uses the finite element method to analyze the thermal performance of SiC MOSFETs discrete package with different package technologies during short circuit conditions. Firstly, the industrial packaging methods used for power semiconductor devices including SiC MOSFET and Si IGBT are analyzed, which are divided into wire-bonded and press-pack package technologies. Then, the finite element models of wire-bonded and press-pack SiC MOSFET discrete packages are built to analyze the thermal performance with short-circuit conditions. The simulation results show that the press-pack technique performs better with respect to peak temperature under the same electrical conditions.

Originalsprog	Engelsk
Titel	2020 22nd European Conference on Power Electronics and Applications, EPE 2020 ECCE Europe
Forlag	IEEE
Publikationsdato	sep. 2020
Artikelnummer	9215875
ISBN (Elektronisk)	9789075815368
DOI	https://doi.org/10.23919/EPE20ECCEEurope43536.2020.9215875
Status	Udgivet - sep. 2020
Begivenhed	22nd European Conference on Power Electronics and Applications, EPE 2020 ECCE Europe - Lyon, Frankrig Varighed: 7 sep. 2020 → 11 sep. 2020

Konference

Konference	22nd European Conference on Power Electronics and Applications, EPE 2020 ECCE Europe
Land/Område	Frankrig
By	Lyon
Periode	07/09/2020 → 11/09/2020

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10.23919/EPE20ECCEEurope43536.2020.9215875

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APETT: Advanced Power Electronic Technology and Tools
Blaabjerg, F., Munk-Nielsen, S., Iannuzzo, F., Wang, H., Uhrenfeldt, C., Beczkowski, S. M., Zhou, D., Choi, U., Jørgensen, A. B., Vernica, I., Sangwongwanich, A., Christensen, N., Ceccarelli, L., Nielsen, C. K., Bahman, A. S., Pedersen, K., Pedersen, K. B. & Kristensen, P. K.
Innovationsfonden
01/01/2017 → 30/06/2021
Projekter: Projekt › Forskning

Citationsformater

@inproceedings{08c9437eca9d42e68bdcc04049140d24,

title = "Comparison of Press-Pack and Wire-Bonding Technologies for SiC MOSFETs under Short-Circuit Conditions",

abstract = "This paper uses the finite element method to analyze the thermal performance of SiC MOSFETs discrete package with different package technologies during short circuit conditions. Firstly, the industrial packaging methods used for power semiconductor devices including SiC MOSFET and Si IGBT are analyzed, which are divided into wire-bonded and press-pack package technologies. Then, the finite element models of wire-bonded and press-pack SiC MOSFET discrete packages are built to analyze the thermal performance with short-circuit conditions. The simulation results show that the press-pack technique performs better with respect to peak temperature under the same electrical conditions.",

keywords = "finite element modeling, MOSFET, press pack, short circuit, silicon carbide",

author = "Ran Yao and Francesco Iannuzzo and Bahman, {Amir Sajjad} and Hui Li",

note = "Funding Information: This work has been carried out under the APETT Project, funded by the Danish Innovation Foundation, 2017-2021, and under the National Key Research and Development Program of China under Grant 2018YFB0905704. Publisher Copyright: {\textcopyright} 2020 EPE Association. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.; 22nd European Conference on Power Electronics and Applications, EPE 2020 ECCE Europe ; Conference date: 07-09-2020 Through 11-09-2020",

year = "2020",

month = sep,

doi = "10.23919/EPE20ECCEEurope43536.2020.9215875",

language = "English",

booktitle = "2020 22nd European Conference on Power Electronics and Applications, EPE 2020 ECCE Europe",

publisher = "IEEE",

address = "United States",

}

Yao, R, Iannuzzo, F , Bahman, AS & Li, H 2020, Comparison of Press-Pack and Wire-Bonding Technologies for SiC MOSFETs under Short-Circuit Conditions. i 2020 22nd European Conference on Power Electronics and Applications, EPE 2020 ECCE Europe., 9215875, IEEE, 22nd European Conference on Power Electronics and Applications, EPE 2020 ECCE Europe, Lyon, Frankrig, 07/09/2020. https://doi.org/10.23919/EPE20ECCEEurope43536.2020.9215875

Comparison of Press-Pack and Wire-Bonding Technologies for SiC MOSFETs under Short-Circuit Conditions. / Yao, Ran; Iannuzzo, Francesco ; Bahman, Amir Sajjad et al.
2020 22nd European Conference on Power Electronics and Applications, EPE 2020 ECCE Europe. IEEE, 2020. 9215875.

Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

TY - GEN

T1 - Comparison of Press-Pack and Wire-Bonding Technologies for SiC MOSFETs under Short-Circuit Conditions

AU - Yao, Ran

AU - Iannuzzo, Francesco

AU - Bahman, Amir Sajjad

AU - Li, Hui

N1 - Funding Information: This work has been carried out under the APETT Project, funded by the Danish Innovation Foundation, 2017-2021, and under the National Key Research and Development Program of China under Grant 2018YFB0905704. Publisher Copyright: © 2020 EPE Association. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.

PY - 2020/9

Y1 - 2020/9

N2 - This paper uses the finite element method to analyze the thermal performance of SiC MOSFETs discrete package with different package technologies during short circuit conditions. Firstly, the industrial packaging methods used for power semiconductor devices including SiC MOSFET and Si IGBT are analyzed, which are divided into wire-bonded and press-pack package technologies. Then, the finite element models of wire-bonded and press-pack SiC MOSFET discrete packages are built to analyze the thermal performance with short-circuit conditions. The simulation results show that the press-pack technique performs better with respect to peak temperature under the same electrical conditions.

AB - This paper uses the finite element method to analyze the thermal performance of SiC MOSFETs discrete package with different package technologies during short circuit conditions. Firstly, the industrial packaging methods used for power semiconductor devices including SiC MOSFET and Si IGBT are analyzed, which are divided into wire-bonded and press-pack package technologies. Then, the finite element models of wire-bonded and press-pack SiC MOSFET discrete packages are built to analyze the thermal performance with short-circuit conditions. The simulation results show that the press-pack technique performs better with respect to peak temperature under the same electrical conditions.

KW - finite element modeling

KW - MOSFET

KW - press pack

KW - short circuit

KW - silicon carbide

UR - http://www.scopus.com/inward/record.url?scp=85094887790&partnerID=8YFLogxK

U2 - 10.23919/EPE20ECCEEurope43536.2020.9215875

DO - 10.23919/EPE20ECCEEurope43536.2020.9215875

M3 - Article in proceeding

AN - SCOPUS:85094887790

BT - 2020 22nd European Conference on Power Electronics and Applications, EPE 2020 ECCE Europe

PB - IEEE

T2 - 22nd European Conference on Power Electronics and Applications, EPE 2020 ECCE Europe

Y2 - 7 September 2020 through 11 September 2020

ER -

Comparison of Press-Pack and Wire-Bonding Technologies for SiC MOSFETs under Short-Circuit Conditions

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APETT: Advanced Power Electronic Technology and Tools

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