Comprehensive review of high-frequency short-circuit oscillation modes in IGBT applications

Paula Diaz Reigosa*, Francesco Iannuzzo, Munaf Rahimo

*Kontaktforfatter

Publikation: Bidrag til bog/antologi/rapport/konference proceedingKonferenceartikel i proceedingForskningpeer review

Abstract

In this paper, the effect of the main circuit parameters and device elements on instabilities of IGBTs during short circuit events are evaluated in terms of electric field and electron density distributions. The following aspects have been covered: (a) the full physical analysis of the oscillation modes, while addressing the main root causes using an IGBT capacitive model, (b) the effect of both device design and circuit parameters on the short circuit behaviour with respect to the oscillations phenomenon, and (c) the methods to mitigate the oscillations at both device and circuit levels. Results show that the most effective way to mitigate the unstable behavior is by shaping the carrier profile in a way that the electric field is sufficiently strong at the emitter side under short circuit conditions. Another relevant result is that a high-impedance configuration of the gate driver can improve oscillation immunity.

OriginalsprogEngelsk
TitelPCIM Europe-International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, 2020
Antal sider8
ForlagVDE Verlag GMBH
Publikationsdato2020
Sider569-576
ISBN (Trykt)978-3-8007-5245-4
StatusUdgivet - 2020
BegivenhedInternational Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2020 - Virtual, Online
Varighed: 7 jul. 20208 jul. 2020

Konference

KonferenceInternational Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2020
ByVirtual, Online
Periode07/07/202008/07/2020

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